Laser-induced damage to silicon CCD imaging devices

1991 ◽  
Vol 30 (5) ◽  
pp. 651 ◽  
Author(s):  
Chen-Zhi Zhang ◽  
Steve E. Watkins ◽  
Rodger M. Walser ◽  
Michael F. Becker
Keyword(s):  
Ccd Imaging ◽  
Laser Induced Damage

Laser-Induced Damage To Silicon CCD Imaging Sensors

1989 ◽  
Author(s):  
Michael F. Becker ◽  
Chen-Zhi Zhang ◽  
Steve E. Watkins ◽  
Rodger M. Walser
Keyword(s):  
Ccd Imaging ◽  
Laser Induced Damage ◽  
Imaging Sensors

Mechanism Research of Pulsed-Laser Induced Damage to CCD Imaging Devices

2011 ◽  
Vol 31 (2) ◽  
pp. 0214006 ◽  
Author(s):  
邱冬冬 Qiu Dongdong ◽  
张震 Zhang Zhen ◽  
王睿 Wang Rui ◽  
江天 Jiang Tian ◽  
程湘爱 Cheng Xiang′ai
Keyword(s):  
Pulsed Laser ◽  
Ccd Imaging ◽  
Mechanism Research ◽  
Laser Induced Damage

UHV-TEM studies of laser-induced damage

1991 ◽  
Vol 49 ◽  
pp. 632-633
Author(s):  
T.S. Savage ◽  
R. Ai ◽  
D. Dunn ◽  
L.D. Marks
Keyword(s):  
Surface Science ◽  
Rapid Heating ◽  
Local Heating ◽  
Routine Practice ◽  
Transmission Electron ◽  
Northwestern University ◽  
Laser Induced Damage ◽  
Set Up ◽  
Focusing Lens ◽  
Diffusion Of Impurities

The use of lasers for surface annealing, heating and/or damage has become a routine practice in the study of materials. Lasers have been closely looked at as an annealing technique for silicon and other semiconductors. They allow for local heating from a beam which can be focused and tuned to different wavelengths for specific tasks. Pulsed dye lasers allow for short, quick bursts which can allow the sample to be rapidly heated and quenched. This short, rapid heating period may be important for cases where diffusion of impurities or dopants may not be desirable.At Northwestern University, a Candela SLL - 250 pulsed dye laser, with a maximum power of 1 Joule/pulse over 350 - 400 nanoseconds, has been set up in conjunction with a Hitachi UHV-H9000 transmission electron microscope. The laser beam is introduced into the surface science chamber through a series of mirrors, a focusing lens and a six inch quartz window.

P20 phosphor on polyimide as a large area high-resolution transmission screen for slow scan CCD systems

1995 ◽  
Vol 53 ◽  
pp. 20-21
Author(s):  
C. C. Ahn ◽  
S. Karnes ◽  
M. Lvovsky ◽  
C. M. Garland ◽  
H. A. Atwater ◽  
...  
Keyword(s):  
Mechanical Stability ◽  
High Energy ◽  
Practical Implementation ◽  
Line Pair ◽  
Modulation Transfer ◽  
Large Area ◽  
Ccd Imaging ◽  
Transmission Electron ◽  
The One ◽  
Beam Broadening

The bane of CCD imaging systems for transmission electron microscopy at intermediate and high voltages has been their relatively poor modulation transfer function (MTF), or line pair resolution. The problem originates primarily with the phosphor screen. On the one hand, screens should be thick so that as many incident electrons as possible are converted to photons, yielding a high detective quantum efficiency(DQE). The MTF diminishes as a function of scintillator thickness however, and to some extent as a function of fluorescence within the scintillator substrates. Fan has noted that the use of a thin layer of phosphor beneath a self supporting 2μ, thick Al substrate might provide the most appropriate compromise for high DQE and MTF in transmission electron microcscopes which operate at higher voltages. Monte Carlo simulations of high energy electron trajectories reveal that only little beam broadening occurs within this thickness of Al film. Consequently, the MTF is limited predominantly by broadening within the thin phosphor underlayer. There are difficulties however, in the practical implementation of this design, associated mostly with the mechanical stability of the Al support film.

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