Better reading light system with light-emitting diodes using optimized Fresnel lens

2006 ◽  
Vol 45 (6) ◽  
pp. 063001 ◽  
Author(s):  
Wen-Gong Chen
Keyword(s):  
Light Emitting Diodes ◽  
Fresnel Lens ◽  
Light Emitting ◽  
Light System

scholarly journals Light-Emitting Diodes (LED): A Promising Street Light System to Reduce the Attraction to Light of Insects

Diversity ◽  
2021 ◽  
Vol 13 (2) ◽  
pp. 89
Author(s):  
Beatriz Martín ◽  
Héctor Pérez ◽  
Miguel Ferrer
Keyword(s):  
Light Emitting Diodes ◽  
Ecological Impacts ◽  
Light Emitting ◽  
Light System ◽  
Wide Range ◽  
Lower Light ◽  
Lighting Systems ◽  
Negative Impacts ◽  
Short Wavelength Light ◽  
Led Lights

Currently, there is a demand for more energy-efficient lighting sources, however, light emitted by different lighting systems differs in primary properties such as intensity, propagation direction, and wavelength spectrum, among others, and these properties may affect insect light attraction. Despite the energetic benefits of light-emitting diodes (LED) as street light systems, their ecological impacts on insects have not yet been tested on a wide range of taxa. Using an experimental approach, we showed that LED street lights lead to a reduction in the total number of insects captured with light traps in a wide range of families. Coleoptera and Lepidoptera orders were the most sensitive groups to ecological light pollution in the study area. We suggest that LED was the least attractive light system for most of the affected groups both because of its very little emitted short-wavelength light and because of its lower light intensity. We expect that the more and more widespread use of LED lights as a measure to reduce economic costs of outdoor lighting should lead to a lower attraction to street lights in most of the affected insect taxa and to diminish the negative impacts of artificial light attraction on the ecosystems.

Injecting Inter-Layers and the Built-in Potential of Blue Polymer Light-Emitting Diodes

2000 ◽  
Vol 660 ◽  
Author(s):  
Thomas M. Brown ◽  
Ian S. Millard ◽  
David J. Lacey ◽  
Jeremy H. Burroughes ◽  
Richard H. Friend ◽  
...  
Keyword(s):  
Indium Tin Oxide ◽  
Light Emitting Diodes ◽  
Basic Structure ◽  
Thin Layers ◽  
Carrier Injection ◽  
Semiconducting Polymer ◽  
Light Emitting ◽  
Physical Mechanisms ◽  
Organic Solid ◽  
Polymer Light Emitting Diodes

ABSTRACTThe semiconducting-polymer/injecting-electrode heterojunction plays a crucial part in the operation of organic solid state devices. In polymer light-emitting diodes (LEDs), a common fundamental structure employed is Indium-Tin-Oxide/Polymer/Al. However, in order to fabricate efficient devices, alterations to this basic structure have to be carried out. The insertion of thin layers, between the electrodes and the emitting polymer, has been shown to greatly enhance LED performance, although the physical mechanisms underlying this effect remain unclear. Here, we use electro-absorption measurements of the built-in potential to monitor shifts in the barrier height at the electrode/polymer interface. We demonstrate that the main advantage brought about by inter-layers, such as poly(ethylenedioxythiophene)/poly(styrene sulphonic acid) (PEDOT:PSS) at the anode and Ca, LiF and CsF at the cathode, is a marked reduction of the barrier to carrier injection. The electro- absorption results also correlate with the electroluminescent characteristics of the LEDs.

Low-Temperature Operation of Green, Blue and UV InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes

2003 ◽  
Vol 764 ◽  
Author(s):  
X. A. Cao ◽  
S. F. LeBoeuf ◽  
J. L. Garrett ◽  
A. Ebong ◽  
L. B. Rowland ◽  
...  
Keyword(s):  
Quantum Well ◽  
Light Emitting Diodes ◽  
Multiple Quantum Well ◽  
Light Output ◽  
Localized States ◽  
Multiple Quantum ◽  
Nonradiative Recombination ◽  
Light Emitting ◽  
Temperature Range ◽  
Green Leds

Absract:Temperature-dependent electroluminescence (EL) of InGaN/GaN multiple-quantum-well light-emitting diodes (LEDs) with peak emission energies ranging from 2.3 eV (green) to 3.3 eV (UV) has been studied over a wide temperature range (5-300 K). As the temperature is decreased from 300 K to 150 K, the EL intensity increases in all devices due to reduced nonradiative recombination and improved carrier confinement. However, LED operation at lower temperatures (150-5 K) is a strong function of In ratio in the active layer. For the green LEDs, emission intensity increases monotonically in the whole temperature range, while for the blue and UV LEDs, a remarkable decrease of the light output was observed, accompanied by a large redshift of the peak energy. The discrepancy can be attributed to various amounts of localization states caused by In composition fluctuation in the QW active regions. Based on a rate equation analysis, we find that the densities of the localized states in the green LEDs are more than two orders of magnitude higher than that in the UV LED. The large number of localized states in the green LEDs are crucial to maintain high-efficiency carrier capture at low temperatures.

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