Study of photon extraction efficiency in InGaN light-emitting diodes depending on chip structures and chip-mount schemes

2006 ◽  
Vol 45 (1) ◽  
pp. 014601 ◽  
Author(s):  
Song Jae Lee
2005 ◽  
Vol 892 ◽  
Author(s):  
C. P. Chan ◽  
T. M. Yue ◽  
C. Surya ◽  
A. M. C. Ng ◽  
A. B. Djurišić ◽  
...  

AbstractWe report experimental investigation of laser-assisted debonding of GaN-based light emitting diodes (LEDs) grown by metalorganic chemical vapor deposition (MOCVD) on sapphire substrates. The device was photo-electrochemically (PEC) etched to form hexagonal pyramid hillocks on the debonded surface. The luminous intensity of the debonded and roughened LEDs increased by 60% when compared to the LEDs on sapphire. This increase is attributed to the enhancement in photon extraction efficiency.


2021 ◽  
Vol 119 (23) ◽  
pp. 233302
Author(s):  
Shukun Weng ◽  
Min Sun ◽  
Liping Zhang ◽  
Lubing Jiang ◽  
Chao Shi ◽  
...  

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