Thermo-optic variable optical attenuator with low power consumption fabricated on silicon-on-insulator by anisotropic chemical etching

2004 ◽  
Vol 43 (4) ◽  
pp. 789 ◽  
Author(s):  
Jinsong Xia
2017 ◽  
Vol 123 (10) ◽  
Author(s):  
Shi-Qi Sun ◽  
Dong-Hai Niu ◽  
Yue Sun ◽  
Xi-Bin Wang ◽  
Man Yang ◽  
...  

2001 ◽  
Vol 11 (04) ◽  
pp. 1159-1248 ◽  
Author(s):  
D. FLANDRE ◽  
J.-P. RASKIN ◽  
D. VANHOENACKER-JANVIER

The new communication markets are vey demanding: high frequency, high degree of integration, low power consumption. Silicon-on-Insulator offers many advantages and this paper illustrates the potentialities of this technology for RF and microwave applictions. After an overview of the SOI material, the properties of the SOI MOSFET's are analyzed and compared to bulk Si MOSFET's. The models of transmission lines and inductors on SOI are compared and further used in the on-wafer characterization of the transistors. Various models for the transistors are presented and their limitations are given. A new model is described, valid from DC to the microwave region. This model agrees very well with the measurements for various transistor dimensions. Finally, variuos RF and microware circuits are presented. Ths paper does not fully describe all the properties and applications of SOI but the numerous references offered to the reader help him to gather more informations.


2014 ◽  
Vol 41 (12) ◽  
pp. 1216001
Author(s):  
曲禄成 Qü Lucheng ◽  
梁磊 Liang Lei ◽  
孙健 Sun Jian ◽  
王希斌 Wang Xibin ◽  
王菲 Wang Fei ◽  
...  

2014 ◽  
Vol 28 (14) ◽  
pp. 1450113 ◽  
Author(s):  
Jian Sun ◽  
Xibin Wang ◽  
Jingwen Sun ◽  
Xiaoqiang Sun ◽  
Changming Chen ◽  
...  

In this paper, a Mach–Zehnder interferometer (MZI) variable optical attenuator (VOA) based on Norland Optical Adhesive73 (NOA73) material has been designed and fabricated. At 1550 nm wavelength, the insertion loss of the VOA was measured to be about 8.1 dB. The developed VOA exhibited ultra-low power consumption of 1.96 mW and high optical attenuation of -29.3 dB. When the attenuation at 1550 nm wavelength was -24.6 dB, the spectral variation was ±2.5 dB within wavelength range of 1510 nm to 1590 nm. The rise and fall times of the device were 1.7 ms and 1.3 ms, respectively.


2017 ◽  
Vol 26 (7) ◽  
pp. 074221 ◽  
Author(s):  
Mei-Zhen Ren ◽  
Jia-Shun Zhang ◽  
Jun-Ming An ◽  
Yue Wang ◽  
Liang-Liang Wang ◽  
...  

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