Field ion microscopy images of multilayered graphene and graphene oxide

2022 ◽  
Vol 40 (1) ◽  
pp. 012803
Author(s):  
Yahachi Saito
Keyword(s):  
Graphene Oxide ◽  
Field Ion Microscopy ◽  
Ion Microscopy ◽  
Microscopy Images

Investigations of Metal-Silicon Interfaces by Time-of-Flight Atom Probe.

1982 ◽  
Vol 14 ◽  
Author(s):  
Christopher Grovenor ◽  
George Smith
Keyword(s):  
Chemical Analysis ◽  
Structural Information ◽  
Time Of Flight ◽  
Atom Probe ◽  
Thin Layers ◽  
Silicon Surfaces ◽  
Field Ion Microscopy ◽  
Ion Microscopy ◽  
Microscopy Images

ABSTRACTThe use of a Time-of-Flight Atom Probe in the analysis of silicon surfaces, and the interfaces between metals and silicon, promises to provide very accurate chemical analysis allied with structural information from Field Ion Microscopy images. This paper presents results on the analysis of silicon surfaces by this technique,showing that good spectra can be obtained without difficulty. Some preliminary experiments on the structure of such specimens after the deposition of thin layers of Pd and Ni will be described,concentrating on the analysis of the stoichiometry of the reacted layers.

Tip radius quantification using feature-size mapping of field ion microscopy images

2014 ◽  
Vol 90 (24) ◽  
Author(s):  
Sören Zint ◽  
Daniel Ebeling ◽  
Dirk Dietzel ◽  
Jens Falter ◽  
André Schirmeisen
Keyword(s):  
Feature Size ◽  
Field Ion Microscopy ◽  
Ion Microscopy ◽  
Tip Radius ◽  
Microscopy Images

A new approach to the interpretation of atom probe field-ion microscopy images

2001 ◽  
Vol 89 (1-3) ◽  
pp. 137-144 ◽  
Author(s):  
F. Vurpillot ◽  
A. Bostel ◽  
D. Blavette
Keyword(s):  
Atom Probe ◽  
Probe Field ◽  
New Approach ◽  
Field Ion Microscopy ◽  
Ion Microscopy ◽  
Microscopy Images

Multi-scale simulations of field ion microscopy images—Image compression with and without the tip shank

2012 ◽  
Vol 112 (1) ◽  
pp. 1-9 ◽  
Author(s):  
Daniel NiewieczerzaŁ ◽  
CzesŁaw Oleksy ◽  
Andrzej Szczepkowicz
Keyword(s):  
Image Compression ◽  
Field Ion Microscopy ◽  
Multi Scale ◽  
Ion Microscopy ◽  
Microscopy Images

Field-Ion Microscopy of BCC Metals: A Study of Image Differences and Topographical Variations

1973 ◽  
Vol 31 ◽  
pp. 114-115
Author(s):  
O. T. Inal ◽  
L. E. Murr
Keyword(s):  
Liquid Nitrogen ◽  
Liquid Nitrogen Temperature ◽  
Surface Atom ◽  
Image Brightness ◽  
Field Ion Microscopy ◽  
Topographic Features ◽  
Bcc Metals ◽  
Electron Orbital ◽  
Ion Microscopy ◽  
Field Ion Microscope

When sharp metal filaments of W, Fe, Nb or Ta are observed in the field-ion microscope (FIM), their appearance is differentiated primarily by variations in regional brightness. This regional brightness, particularly prominent at liquid nitrogen temperature has been attributed in the main to chemical specificity which manifests itself in a paricular array of surface-atom electron-orbital configurations.Recently, anomalous image brightness and streaks in both fcc and bee materials observed in the FIM have been shown to be the result of surface asperities and related topographic features which arise by the unsystematic etching of the emission-tip end forms.

Field ion microscopy

1988 ◽  
Vol 46 ◽  
pp. 434-435
Author(s):  
Gert Ehrlich
Keyword(s):  
Low Temperature ◽  
Sample Surface ◽  
Low Pressure ◽  
Radius Of Curvature ◽  
Field Ion Microscopy ◽  
Phosphor Screen ◽  
Ion Microscopy ◽  
Field Ion Microscope

The field ion microscope, devised by Erwin Muller in the 1950's, was the first instrument to depict the structure of surfaces in atomic detail. An FIM image of a (111) plane of tungsten (Fig.l) is typical of what can be done by this microscope: for this small plane, every atom, at a separation of 4.48Å from its neighbors in the plane, is revealed. The image of the plane is highly enlarged, as it is projected on a phosphor screen with a radius of curvature more than a million times that of the sample. Müller achieved the resolution necessary to reveal individual atoms by imaging with ions, accommodated to the object at a low temperature. The ions are created at the sample surface by ionization of an inert image gas (usually helium), present at a low pressure (< 1 mTorr). at fields on the order of 4V/Å.

On the Shape of Field-Ion Emitters

1976 ◽  
Vol 34 ◽  
pp. 520-521
Author(s):  
H.C. Eaton ◽  
B.N. Ranganathan ◽  
T.W. Burwinkle ◽  
R. J. Bayuzick ◽  
J.J. Hren
Keyword(s):  
Grain Boundary ◽  
Spherical Shape ◽  
Theoretical Strength ◽  
Evaporation Process ◽  
Field Evaporation ◽  
Geometric Information ◽  
Field Ion Microscopy ◽  
Considerable Error ◽  
True Shape ◽  
Ion Microscopy

The shape of the emitter is of cardinal importance to field-ion microscopy. First, the field evaporation process itself is closely related to the initial tip shape. Secondly, the imaging stress, which is near the theoretical strength of the material and intrinsic to the imaging process, cannot be characterized without knowledge of the emitter shape. Finally, the problem of obtaining quantitative geometric information from the micrograph cannot be solved without knowing the shape. Previously published grain-boundary topographies were obtained employing an assumption of a spherical shape (1). The present investigation shows that the true shape deviates as much as 100 Å from sphericity and boundary reconstructions contain considerable error as a result.Our present procedures for obtaining tip shape may be summarized as follows. An empirical projection, D=f(θ), is obtained by digitizing the positions of poles on a field-ion micrograph.

Scanning ion microscopy images

1987 ◽  
Vol 45 ◽  
pp. 180-181
Author(s):  
R. Levi-Setti ◽  
J.M. Chabala ◽  
Y.L. Wang
Keyword(s):  
Metal Ion ◽  
Secondary Emission ◽  
Scanning Method ◽  
Ion Channeling ◽  
Secondary Ions ◽  
High Resolution Images ◽  
Ion Microscopy ◽  
Z Contrast ◽  
Focused Beams ◽  
Microscopy Images

Finely focused beams extracted from liquid metal ion sources (LMIS) provide a wealth of secondary signals which can be exploited to create high resolution images by the scanning method. The images of scanning ion microscopy (SIM) encompass a variety of contrast mechanisms which we classify into two broad categories: a) Emission contrast and b) Analytical contrast.Emission contrast refers to those mechanisms inherent to the emission of secondaries by solids under ion bombardment. The contrast-carrying signals consist of ion-induced secondary electrons (ISE) and secondary ions (ISI). Both signals exhibit i) topographic emission contrast due to the existence of differential geometric emission and collection effects, ii) crystallographic emission contrast, due to primary ion channeling phenomena and differential oxidation of crystalline surfaces, iii) chemical emission or Z-contrast, related to the dependence of the secondary emission yields on the Z and surface chemical state of the target.

Sign in / Sign up

Export Citation Format

Share Document