Observing secondary-electron yield and charging in an insulating material by ultralow-voltage scanning electron microscope

2022 ◽  
Vol 40 (1) ◽  
pp. 012805
Author(s):  
Daisuke Bizen ◽  
Fumiya Ishizaka ◽  
Makoto Sakakibara ◽  
Makoto Suzuki ◽  
Natsuki Tsuno ◽  
...  
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Secondary Electron ◽  
Secondary Electron Yield ◽  
Insulating Material ◽  
Electron Yield ◽  
Voltage Scanning ◽  
Scanning Electron

Edge Penetration Effects in the Low-Loss Electron Image in the SEM

1988 ◽  
Vol 46 ◽  
pp. 202-203
Author(s):  
Oliver C. Wells
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Beam Energy ◽  
Secondary Electron ◽  
Sharp Edge ◽  
Beam Diameter ◽  
Low Loss ◽  
Additional Information ◽  
Electron Image ◽  
Scanning Electron

The low-loss electron (LLE) image in the scanning electron microscope (SEM) is useful for the study of uncoated photoresist and some other poorly conducting specimens because it is less sensitive to specimen charging than is the secondary electron (SE) image. A second advantage can arise from a significant reduction in the width of the “penetration fringe” close to a sharp edge. Although both of these problems can also be solved by operating with a beam energy of about 1 keV, the LLE image has the advantage that it permits the use of a higher beam energy and therefore (for a given SEM) a smaller beam diameter. It is an additional attraction of the LLE image that it can be obtained simultaneously with the SE image, and this gives additional information in many cases. This paper shows the reduction in penetration effects given by the use of the LLE image.

Magnetic Domain Observation of an Amorphous Fe-Si-B Ribbon by Means of a High Voltage Scanning Electron Microscope

1981 ◽  
Vol 39 ◽  
pp. 320-321
Author(s):  
K. Tsuno ◽  
Y. Harada ◽  
T. Sato
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
High Voltage ◽  
Amorphous Ribbon ◽  
Image Resolution ◽  
Objective Lens ◽  
Magnetic Domains ◽  
Scattered Electron ◽  
Voltage Scanning ◽  
Scanning Electron

Magnetic domains of ferromagnetic amorphous ribbon have been observed using Bitter powder method. However, the domains of amorphous ribbon are very complicated and the surface of ribbon is not flat, so that clear domain image has not been obtained. It has been desired to observe more clear image in order to analyze the domain structure of this zero magnetocrystalline anisotropy material. So, we tried to observe magnetic domains by means of a back-scattered electron mode of high voltage scanning electron microscope (HVSEM).HVSEM method has several advantages compared with the ordinary methods for observing domains: (1) high contrast (0.9, 1.5 and 5% at 50, 100 and 200 kV) (2) high penetration depth of electrons (0.2, 1.5 and 8 μm at 50, 100 and 200 kV). However, image resolution of previous HVSEM was quite low (maximum magnification was less than 100x), because the objective lens cannot be excited for avoiding the application of magnetic field on the specimen.

Linewidth measurement using the low voltage SEM

1986 ◽  
Vol 44 ◽  
pp. 652-653
Author(s):  
M.G. Rosenfield
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Integrated Circuits ◽  
Secondary Electron ◽  
Low Voltage ◽  
Fabrication Process ◽  
Critical Dimensions ◽  
Linewidth Measurement ◽  
Threshold Technique ◽  
Scanning Electron

Minimum feature sizes in experimental integrated circuits are approaching 0.5 μm and below. During the fabrication process it is usually necessary to be able to non-destructively measure the critical dimensions in resist and after the various process steps. This can be accomplished using the low voltage SEM. Submicron linewidth measurement is typically done by manually measuring the SEM micrographs. Since it is desirable to make as many measurements as possible in the shortest period of time, it is important that this technique be automated.Linewidth measurement using the scanning electron microscope is not well understood. The basic intent is to measure the size of a structure from the secondary electron signal generated by that structure. Thus, it is important to understand how the actual dimension of the line being measured relates to the secondary electron signal. Since different features generate different signals, the same method of relating linewidth to signal cannot be used. For example, the peak to peak method may be used to accurately measure the linewidth of an isolated resist line; but, a threshold technique may be required for an isolated space in resist.

scholarly journals Coloring Pictures for Electron Microscopists or Elements of Digital Image Manipulation for Students

2008 ◽  
Vol 16 (4) ◽  
pp. 62-63
Author(s):  
V.M. Dusevich ◽  
J.H. Purk ◽  
J.D. Eick
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Digital Image ◽  
Secondary Electron ◽  
Image Manipulation ◽  
Sem Micrographs ◽  
Backscattered Electrons ◽  
Digital Picture ◽  
Scanning Electron

Coloring pictures is an educational exercise, which is fun, and helps develop important skills. Coloring SEM micrographs is especially suitable for electron microscopists. Color micrographs are not just great looking on a lab wall; they inspire both microscopists and students to exercise digital picture manipulation. Many microscopists enjoyed looking at the beautiful color micrographs by D. Scharf, but were frustrated to learn they needed a very particular scanning electron microscope equipped with multiple secondary electron detectors in order to color their own pictures. Fortunately, there are other ways to color SEM micrographs. Most SEMs are equipped with at least two detectors, for secondary and backscattered electrons.

Novel and Advanced Applications of the Low Vacuum and Environmental Scanning Electron Microscope (SEM)

1997 ◽  
Vol 3 (S2) ◽  
pp. 385-386 ◽  
Author(s):  
Brendan J. Griffin
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Secondary Electron ◽  
Electron Gun ◽  
Environmental Scanning ◽  
Electron Detector ◽  
Environmental Sem ◽  
Practical Sense ◽  
Advanced Applications ◽  
Scanning Electron

The environmental SEM is an extremely adaptive instrument, allowing a range of materials to be examined under a wide variety of conditions. The limitations of the instrument lie mainly with the restrictions imposed by the need to maintain a moderate vacuum around the electron gun. The primary effect of this has been, in a practical sense, the limited low magnification available. Recently this has been overcome by modifications to the final pressure limiting aperture and secondary electron detector (Fig.l). The modifications are simple and users should be brave in this regard.A variety of electron detectors now exist including various secondary, backscattered and cathodoluminescence systems (Figs 2-5). These provide an excellent range of options; the ESEM must be regarded as a conventional SEM in that a range of imaging options should be installed. In some cases, e.g. cathodoluminescence, the lack of coating provides an advantage unique to the low vacuum SEMs.

Sign in / Sign up

Export Citation Format

Share Document