Atomic layer deposition of lithium metaphosphate from H3PO4 and P4O10 facilitated via direct liquid injection: Experiment and theory

2021 ◽  
Vol 39 (6) ◽  
pp. 062407
Author(s):  
Ivan Kundrata ◽  
Antónia Mošková ◽  
Martin Moško ◽  
Matej Mičušík ◽  
Edmund Dobročka ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Liquid Injection ◽  
Direct Liquid Injection ◽  
Injection Experiment

TiO2 anatase films obtained by direct liquid injection atomic layer deposition at low temperature

2014 ◽  
Vol 288 ◽  
pp. 201-207 ◽  
Author(s):  
L. Avril ◽  
S. Reymond-Laruinaz ◽  
J.M. Decams ◽  
S. Bruyère ◽  
V. Potin ◽  
...  
Keyword(s):  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Tio2 Anatase ◽  
Layer Deposition ◽  
Liquid Injection ◽  
Direct Liquid Injection

Atomic Layer Deposition of LaOx and LaAlOx Thin Films Using Direct Liquid Injection of Lanthanum Sources

2019 ◽  
Vol 33 (2) ◽  
pp. 411-416
Author(s):  
Yoshi Senzaki ◽  
Yoshi Okuyama ◽  
Gi Kim ◽  
Jerry Mack ◽  
Larry Matthysse ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Liquid Injection ◽  
Direct Liquid Injection

Atomic Layer Deposition (ALD) of Bismuth Titanium Oxide Thin Films Using Direct Liquid Injection (DLI) Method

2003 ◽  
Vol 59 (1) ◽  
pp. 1483-1489 ◽  
Author(s):  
Young Jin Cho ◽  
Yo-Sep Min ◽  
Jung-Hyun Lee ◽  
Bum-Seok Seo ◽  
June Key Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Titanium Oxide ◽  
Atomic Layer ◽  
Oxide Thin Films ◽  
Layer Deposition ◽  
Liquid Injection ◽  
Direct Liquid Injection

Optical and electrical characterization of hafnium oxide deposited by liquid injection atomic layer deposition

2007 ◽  
Vol 47 (4-5) ◽  
pp. 825-829 ◽  
Author(s):  
P. Taechakumput ◽  
S. Taylor ◽  
O. Buiu ◽  
R.J. Potter ◽  
P.R. Chalker ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Hafnium Oxide ◽  
Electrical Characterization ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Liquid Injection

Evaluation of Pb Precursors for Liquid Injection Atomic Layer Deposition of Pb(ZrxTi1-x)O3 Thin Films

2005 ◽  
Vol 902 ◽  
Author(s):  
Takayuki Watanabe ◽  
Susanne Hoffmann-Eifert ◽  
Cheol Seong Hwang ◽  
Rainer Waser
Keyword(s):  
Growth Rate ◽  
Thermal Decomposition ◽  
Atomic Layer Deposition ◽  
Deposition Rate ◽  
Deposition Temperature ◽  
Atomic Layer ◽  
Decomposition Temperature ◽  
Thermal Decomposition Temperature ◽  
Layer Deposition ◽  
Liquid Injection

AbstractPb(DPM)2 and Pb(TMOD)2 dissolved in ethylcyclohexane were evaluated as precursors for future atomic layer deposition (ALD) of Pb(Zr,Ti)O3 films. PbO films were deposited by a liquid injection atomic layer deposition on Pt-covered Si substrates at different deposition temperature and precursor volume per cycle. Pb(DPM)2 and Pb(TMOD)2 started thermal decomposition at deposition temperature of around 270°C and 320°C, respectively. Against increasing Pb(DPM)2 injection at 240°C, the deposition rate of PbO films saturated at around 1 Å/cycle, but kept increasing at 300°C, which is above the thermal decomposition temperature. The deposition rate of PbO films at 240°C dropped to a constant value with enough purge time after precursor injection and reactant supply. A saturated deposition rate of PbO films was also observed for Pb(TMOD)2 below the thermal decomposition temperature. However, the saturation behavior observed for Pb(TMOD)2 was slower and the saturated growth rate was higher comparing to Pb(DPM)2. In addition, the film thickness of the PbO films had an apparent gradient over the substrates. These results indicate that Pb(DPM)2 shows more reactive and stable chemisorption comparing to Pb(TMOD)2 for the self-limiting growth rate.

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