Area selective deposition of iron films using temperature sensitive masking materials and plasma electrons as reducing agents

2021 ◽  
Vol 39 (4) ◽  
pp. 043411
Author(s):  
Hama Nadhom ◽  
Yusheng Yuan ◽  
Polla Rouf ◽  
Niclas Solin ◽  
Henrik Pedersen
Keyword(s):  
Reducing Agents ◽  
Temperature Sensitive ◽  
Selective Deposition ◽  
Iron Films

scholarly journals Area Selective Deposition of Metal Films Using Temperature Sensitive Masking Materials and Plasma Electrons as Reducing Agents

2021 ◽  
Author(s):  
Hama Nadhom ◽  
Yusheng Yuan ◽  
Polla Rouf ◽  
Niclas Solin ◽  
Henrik Pedersen
Keyword(s):  
Photoelectron Spectroscopy ◽  
Film Growth ◽  
Chemical Vapor ◽  
Metal Films ◽  
Reducing Agents ◽  
Film Deposition ◽  
Chemical Vapor Deposition Method ◽  
Temperature Sensitive ◽  
Film Material ◽  
Selective Deposition

<p>The potential of area selective deposition (ASD) with a newly developed chemical vapor deposition method, which utilize plasma electrons as reducing agents for deposition of metal films, is demonstrated using temperature sensitive polymer-based masking materials. The masking materials tested were polydimethylsiloxane (PDMS), polymethylmethacrylate (PMMA), polystyrene (PS), parafilm, Kapton tape, Scotch tape, and office paper. The masking materials where all shown to prevent film growth on the masked area of the substrate without being affected by the film deposition process. X-ray photoelectron spectroscopy analysis confirms that the film deposited consist mainly of metallic iron, whereas no film material is found on the masked areas after mask removal. SEM analysis of films deposited with non‑adhesive masking materials show that film growth extended for a small distance underneath the masking material, indicating that the CVD process with plasma electrons as a reducing agent is not a line-of-sight deposition technique. The reported methodology introduces an inexpensive and straightforward approach for ASD that opens for exciting new possibilities for robust and less complex area selective metal‑on‑metal deposition. </p>

scholarly journals Area Selective Deposition of Iron Films Using Temperature Sensitive Masking Materials and Plasma Electrons as Reducing Agents

2021 ◽  
Author(s):  
Hama Nadhom ◽  
Yusheng Yuan ◽  
Polla Rouf ◽  
Niclas Solin ◽  
Henrik Pedersen
Keyword(s):  
Photoelectron Spectroscopy ◽  
Film Growth ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Reducing Agents ◽  
Film Deposition ◽  
Chemical Vapor Deposition Method ◽  
Temperature Sensitive ◽  
Film Material ◽  
Selective Deposition

<p>potential of area selective deposition (ASD) with a newly developed chemical vapor deposition method, which utilize plasma electrons as reducing agents for deposition of metal-containing films, is demonstrated using temperature sensitive polymer-based masking materials. The masking materials tested were polydimethylsiloxane (PDMS), polymethylmethacrylate (PMMA), polystyrene (PS), parafilm, Kapton tape, Scotch tape, and office paper. The masking materials were all shown to prevent film growth on the masked area of the substrate without being affected by the film deposition process. X-ray photoelectron spectroscopy analysis confirms that the films deposited consist mainly of iron, whereas no film material is found on the masked areas after mask removal. SEM analysis of films deposited with non-adhesive masking materials show that film growth extended for a small distance underneath the masking material, indicating that the CVD process with plasma electrons as reducing agents is not a line-of-sight deposition technique. The reported methodology introduces an inexpensive and straightforward approach for ASD that opens for exciting new possibilities for robust and less complex area selective metal-on-metal deposition. </p>

scholarly journals Area Selective Deposition of Metal Films Using Temperature Sensitive Masking Materials and Plasma Electrons as Reducing Agents

2021 ◽  
Author(s):  
Hama Nadhom ◽  
Yusheng Yuan ◽  
Polla Rouf ◽  
Niclas Solin ◽  
Henrik Pedersen
Keyword(s):  
Photoelectron Spectroscopy ◽  
Film Growth ◽  
Chemical Vapor ◽  
Metal Films ◽  
Reducing Agents ◽  
Film Deposition ◽  
Chemical Vapor Deposition Method ◽  
Temperature Sensitive ◽  
Film Material ◽  
Selective Deposition

<p>The potential of area selective deposition (ASD) with a newly developed chemical vapor deposition method, which utilize plasma electrons as reducing agents for deposition of metal films, is demonstrated using temperature sensitive polymer-based masking materials. The masking materials tested were polydimethylsiloxane (PDMS), polymethylmethacrylate (PMMA), polystyrene (PS), parafilm, Kapton tape, Scotch tape, and office paper. The masking materials where all shown to prevent film growth on the masked area of the substrate without being affected by the film deposition process. X-ray photoelectron spectroscopy analysis confirms that the film deposited consist mainly of metallic iron, whereas no film material is found on the masked areas after mask removal. SEM analysis of films deposited with non‑adhesive masking materials show that film growth extended for a small distance underneath the masking material, indicating that the CVD process with plasma electrons as a reducing agent is not a line-of-sight deposition technique. The reported methodology introduces an inexpensive and straightforward approach for ASD that opens for exciting new possibilities for robust and less complex area selective metal‑on‑metal deposition. </p>

scholarly journals Area Selective Deposition of Metals from the Electrical Resistivity of the Substrate

2021 ◽  
Author(s):  
Hama Nadhom ◽  
Robert Boyd ◽  
Polla Rouf ◽  
Daniel Lundin ◽  
Henrik Pedersen
Keyword(s):  
Thin Films ◽  
Electrical Resistivity ◽  
Substrate Surface ◽  
Electric Resistivity ◽  
High Resistivity ◽  
Metallic Thin Films ◽  
Selective Deposition ◽  
Iron Films ◽  
Cvd Method ◽  
Metal On Metal

<p>Area selective deposition (ASD) of films only on desired areas of the substrate opens for less complex fabrication of nanoscaled electronics. We show that a newly developed CVD method, where plasma electrons are used as the reducing agent in deposition of metallic thin films, is inherently area selective from the electrical resistivity of the substrate surface. When depositing iron with the new CVD method, no film is deposited on high-resistivity SiO<sub>2</sub> surfaces whereas several hundred nm thick iron films are deposited on areas with low resistivity, obtained by adding a thin layer of silver on the SiO<sub>2</sub> surface. Based on such a scheme, we show how to use the electric resistivity of the substrate surface as an extension of the ASD toolbox for metal-on-metal deposition. </p>

scholarly journals Area Selective Deposition of Metals from the Electrical Resistivity of the Substrate

2021 ◽  
Author(s):  
Hama Nadhom ◽  
Robert Boyd ◽  
Polla Rouf ◽  
Daniel Lundin ◽  
Henrik Pedersen
Keyword(s):  
Thin Films ◽  
Electrical Resistivity ◽  
Substrate Surface ◽  
Electric Resistivity ◽  
High Resistivity ◽  
Metallic Thin Films ◽  
Selective Deposition ◽  
Iron Films ◽  
Cvd Method ◽  
Metal On Metal

<p>Area selective deposition (ASD) of films only on desired areas of the substrate opens for less complex fabrication of nanoscaled electronics. We show that a newly developed CVD method, where plasma electrons are used as the reducing agent in deposition of metallic thin films, is inherently area selective from the electrical resistivity of the substrate surface. When depositing iron with the new CVD method, no film is deposited on high-resistivity SiO<sub>2</sub> surfaces whereas several hundred nm thick iron films are deposited on areas with low resistivity, obtained by adding a thin layer of silver on the SiO<sub>2</sub> surface. Based on such a scheme, we show how to use the electric resistivity of the substrate surface as an extension of the ASD toolbox for metal-on-metal deposition. </p>

scholarly journals Area Selective Deposition of Metals from the Electrical Resistivity of the Substrate

2021 ◽  
Author(s):  
Hama Nadhom ◽  
Robert Boyd ◽  
Polla Rouf ◽  
Daniel Lundin ◽  
Henrik Pedersen
Keyword(s):  
Thin Films ◽  
Electrical Resistivity ◽  
Substrate Surface ◽  
Electric Resistivity ◽  
High Resistivity ◽  
Metallic Thin Films ◽  
Selective Deposition ◽  
Iron Films ◽  
Cvd Method ◽  
Metal On Metal

<p>Area selective deposition (ASD) of films only on desired areas of the substrate opens for less complex fabrication of nanoscaled electronics. We show that a newly developed CVD method, where plasma electrons are used as the reducing agent in deposition of metallic thin films, is inherently area selective from the electrical resistivity of the substrate surface. When depositing iron with the new CVD method, no film is deposited on high-resistivity SiO<sub>2</sub> surfaces whereas several hundred nm thick iron films are deposited on areas with low resistivity, obtained by adding a thin layer of silver on the SiO<sub>2</sub> surface. Based on such a scheme, we show how to use the electric resistivity of the substrate surface as an extension of the ASD toolbox for metal-on-metal deposition. </p>

Oncogenesis and the Lucké Virus

1968 ◽  
Vol 26 ◽  
pp. 200-201
Author(s):  
A. E. Vatter ◽  
J. Zambernard
Keyword(s):  
Rna Viruses ◽  
Vegetative State ◽  
Temperature Sensitive ◽  
Structural Level ◽  
Oncogenic Viruses ◽  
Dna Viruses ◽  
Leopard Frogs ◽  
Renal Adenocarcinoma ◽  
Induced Tumors ◽  
Northern Leopard Frogs

Oncogenic viruses, like viruses in general, can be divided into two classes, those that contain deoxyribonucleic acid (DNA) and those that contain ribonucleic acid (RNA). The RNA viruses have been recovered readily from the tumors which they cause whereas, the DNA-virus induced tumors have not yielded the virus. Since DNA viruses cannot be recovered, the bulk of present day investigations have been concerned with RNA viruses.The Lucké renal adenocarcinoma is a spontaneous tumor which occurs in northern leopard frogs (Rana pipiens) and has received increased attention in recent years because of its probable viral etiology. This hypothesis was first advanced by Lucké after he observed intranuclear inclusions in some of the tumor cells. Tumors with inclusions were examined at the fine structural level by Fawcett who showed that they contained immature and mature virus˗like particles.The use of this system in the study of oncogenic tumors offers several unique features, the virus has been shown to contain DNA and it can be recovered from the tumor, also, it is temperature sensitive. This latter feature is of importance because the virus can be transformed from a latent to a vegetative state by lowering or elevating the environmental temperature.

THEORETICAL ELECTRON DENSITY AND TEMPERATURE SENSITIVE EMISSION LINE RATIOS FOR HELIUM-LIKE Si XIII COMPARED TO DITE TOKAMAK OBSERVATIONS

1989 ◽  
Vol 50 (C1) ◽  
pp. C1-559-C1-564
Author(s):  
F. P. KEENAN ◽  
R. BARNSLEY ◽  
J. DUNN ◽  
K. D. EVANS ◽  
S. M. McCANN ◽  
...  
Keyword(s):  
Emission Line ◽  
Electron Density ◽  
Temperature Sensitive ◽  
Electron Density And Temperature
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