Precise control of time-varying effusion cell flux in molecular beam epitaxy

2021 ◽  
Vol 39 (4) ◽  
pp. 043407
Author(s):  
Chris Deimert ◽  
Zbig R. Wasilewski
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Effusion Cell ◽  
Time Varying ◽  
Precise Control

Reflection High-Energy-Electron Diffraction Study of Inp and InAs (100) In Gas-Source Molecular Beam Epitaxy

1990 ◽  
Vol 216 ◽  
Author(s):  
T. P. Chin ◽  
B. W. Liang ◽  
H. Q. Hou ◽  
C. W. Tu
Keyword(s):  
Molecular Beam Epitaxy ◽  
Electron Diffraction ◽  
Molecular Beam ◽  
Electron Diffraction Study ◽  
High Energy ◽  
Energy Electron ◽  
High Energy Electron ◽  
Group V ◽  
Precise Control ◽  
Gas Source

ABSTRACTInP and InAs (100) were grown by gas-source molecular-beam epitaxy (GSMBE) with arsine, phosphine, and elemental indium. Reflection high-energy-electron diffraction (RHEED) was used to monitor surface reconstructions and growth rates. (2×4) to (2×1) transition was observed on InP (100) as phosphine flow rate increased. (4×2) and (2×4) patterns were observed for In-stabilized and As-stabilized InAs surfaces, respectively. Both group-V and group-rn-induced RHEED oscillations were observed. The group-V surface desorption activation energy were measured to be 0.61 eV for InP and 0.19 eV for InAs. By this growth rate study, we are able to establish a precise control of V/HII atomic ratios in GSMBE of InP and InAs.

scholarly journals Precise control of LaTiO3(110) film growth by molecular beam epitaxy and surface termination of the polar film

2015 ◽  
Vol 64 (7) ◽  
pp. 078103
Author(s):  
Li Wen-Tao ◽  
Liang Yan ◽  
Wang Wei-Hua ◽  
Yang Fang ◽  
Guo Jian-Dong
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Film Growth ◽  
Surface Termination ◽  
Precise Control

Atomic Layer Epitaxy of Wide Bandgap II-VI Compound Semiconductor Superlattices

1989 ◽  
Vol 161 ◽  
Author(s):  
M. Konagai ◽  
Y. Takemura ◽  
R. Kimura ◽  
N. Teraguchi ◽  
K. Takahashl
Keyword(s):  
Molecular Beam Epitaxy ◽  
Substrate Temperature ◽  
Molecular Beam ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Precise Control ◽  
Metalorganic Molecular Beam Epitaxy ◽  
Opening And Closing ◽  
Strained Layer Superlattices ◽  
Constituent Elements

ABSTRACTZnSe, ZnTe and ZnSe-ZnTe strained-layer superlattices (SLS's) have been successfully grown by atomic layer epitaxy (ALE) using molecular beam epitaxy (MBE-ALE). The ideal ALE growth, i.e., one monolayer per cycle of opening and closing the shutters of the constituent elements, was obtained for ZnSe in the substrate temperature range of 250-350° C. However, for ZnTe, precise control of the Te beam intensity is needed to obtain the ALE growth. Optical properties of the (ZnSe)l-(ZnTe) 1 SLS were evaluated by photoluminesence. ZnSe films were also grown by ALE using metalorganic molecular beam epitaxy (MOMBE-ALE). Diethylzinc (DEZn), diethylsulfur (DES) and diethylselenium (DESe) were used as source gases for Zn, S and Se, respectively. The ALE growth of ZnSe was achieved at substrate temperature between 250 and 300° C which is about 150° C lower than that for the conventional MOMBE.

Optical-based Flux Monitoring of Atomic Antimony Sources for Molecular Beam Epitaxy

1995 ◽  
Vol 406 ◽  
Author(s):  
P. D. Brewer ◽  
K. P. Killeen
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Flux Measurement ◽  
Product Distribution ◽  
Effusion Cell ◽  
Real Time Control ◽  
Double Pass ◽  
Mbe Growth ◽  
Time Control ◽  
Flux Monitoring

AbstractIn this paper we discuss the use of optical-based flux monitoring (OFM) for real-time control of atomic antimony fluxes for applications in molecular beam epitaxy. Atomic antimony beams were generated using a two-zone cracking effusion cell. The product distribution of the source was characterized using a time-of-flight mass spectrometer employing resonance-enhanced laser ionization. A double-pass OFM system has been developed to monitor the atomic antimony beam that is capable of precise flux measurement during MBE growth.

In Situ Spectroscopic Ellipsometry for Monitoring and Control of HgCdTe Heterostructures Grown by Molecular Beam Epitaxy

1996 ◽  
Vol 450 ◽  
Author(s):  
L. A. Almeida ◽  
M. J. Bevan ◽  
W. M. Duncan ◽  
H. D. Shih
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Current Status ◽  
Effusion Cell ◽  
Monitoring And Control ◽  
Automated Control ◽  
Point Change ◽  
Process Step ◽  
Set Point ◽  
Cdte Passivation

ABSTRACTA major advantage of vapor phase epitaxial growth techniques is their flexibility to produce Hg1−xCdxTe layers with difFerent compositions from one run to the next, as well as the flexibility to produce compositional heterostructures of Hg1−xCdxTe in one process step. To take full advantage of this flexibility, reliable, automated control must be introduced. To this end, a phase-modulated spectroscopie ellipsometer (SE) has been implemented for use as a contactless wafer state sensor. In this work SE was used to monitor in real-time the stoichiometry of epitaxial Hg1–4CdxTe during growth by molecular beam epitaxy (MBE). SE has provided valuable information about the MBE growth process, by revealing even small fluctuations in x (± 0.002). In particular, SE has measured the compositional profiles of both LWIR/MWIR and MWIR/LWIR interfaces. Distinct profiles were revealed for interfaces created by abrupt changes in the CdTe effusion cell set-point and for interfaces created by ramping the cell temperature linearly. Ramping results in a smoothly graded interface, whose thickness may be pre-determined, though typically 2000 Å. An abrupt set-point change results in a sharper transition (∼300 Å) followed by oscillations in composition associated with the settling time of the cell (∼1500 Å). The thickness of a CdTe passivation layer grown on a LWTR layer was determined. The current status of the SE will be reported through other illustrative examples which demonstrate its utility as a diagnostic tool and as a sensor for realtime, feed-back control of the MBE process.

In-plane InGaAs/Ga(As)Sb nanowire based tunnel junctions grown by selective area molecular beam epitaxy

2021 ◽  
Author(s):  
Alexandre Bucamp ◽  
Christophe Coinon ◽  
Sylvie Lepilliet ◽  
David Troadec ◽  
Gilles Patriarche ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Strain Relaxation ◽  
Tunnel Diodes ◽  
Precise Control ◽  
Selective Area ◽  
Large Peak ◽  
Current Densities ◽  
Composition Fluctuations ◽  
The Impact

Abstract In-plane InGaAs/Ga(As)Sb heterojunction tunnel diodes are fabricated by selective area molecular beam epitaxy with two different architectures: either radial InGaAs core / Ga(As)Sb shell nanowires or axial InGaAs/GaSb heterojunctions. In the former case, we unveil the impact of strain relaxation and alloy composition fluctuations at the nanoscale on the tunneling properties of the diodes, whereas in the latter case we demonstrate that template assisted molecular beam epitaxy can be used to achieve a very precise control of tunnel diodes dimensions at the nanoscale with a scalable process. In both cases, negative differential resistances with large peak current densities are achieved.

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