scholarly journals Rhombohedral boron nitride epitaxy on ZrB2

2021 ◽  
Vol 39 (1) ◽  
pp. 013405
Author(s):  
Laurent Souqui ◽  
Justinas Palisaitis ◽  
Naureen Ghafoor ◽  
Henrik Pedersen ◽  
Hans Högberg
Keyword(s):  
Boron Nitride ◽  
Rhombohedral Boron

scholarly journals Rhombohedral Boron Nitride Epitaxy on ZrB2

2020 ◽  
Author(s):  
Laurent Souqui ◽  
Justinas Palisaitis ◽  
Naureen Ghafoor ◽  
Henrik Pedersen ◽  
Hans Högberg
Keyword(s):  
Electron Microscopy ◽  
Boron Nitride ◽  
Photoelectron Spectroscopy ◽  
Amorphous Material ◽  
Limited Area ◽  
Sem Images ◽  
Plan View ◽  
Minute Amount ◽  
X Ray ◽  
Rhombohedral Boron

<div>Epitaxial rhombohedral boron nitride films were deposited on ZrB<sub>2</sub>(0001)/4H-SiC(0001) by chemical vapor deposition at 1485 °C from the reaction of triethylboron and ammonia and with a minute amount of silane (SiH<sub>4</sub>). X-ray diffraction (XRD) φ-scans yield the epitaxial relationships of 𝑟−𝐵𝑁(0001)∥𝑍𝑟𝐵2(0001) out-of-plane and 𝑟−𝐵𝑁(1120)∥𝑍𝑟𝐵2(1120) in-plane. Cross-section transmission electron microscopy (TEM) micrographs showed that epitaxial break down of r-BN film occurs approximatively after 10 nm, above which epitaxial growth proceeds only in limited area up to 80 nm of film thickness. Both XRD and TEM demonstrate the formation of carbon- and nitrogen-containing cubic inclusions at the ZrB<sub>2</sub> surface. Quantitative analysis from X-ray photoelectron spectroscopy of the r-BN films shows B/N ratios between 1.30 to 1.20 and an O content of 3 to 4 at.%. Plan-view scanning electron microscopy (SEM) images reveal a surface morphology where an amorphous material comprising B, C, and N is surrounding the epitaxial twinned r-BN crystals. SiH<sub>4</sub> exposure prior to growth was found to reduce the amount of the amorphous phase on the surface. Defects such as pitting were also observed on the ZrB<sub>2</sub> template surface.</div><div><br></div>

scholarly journals Thermal Chemical Vapor Deposition of Epitaxial Rhombohedral Boron Nitride from Trimethylboron and Ammonia

2018 ◽  
Author(s):  
Laurent Souqui ◽  
Henrik Pedersen ◽  
Hans Högberg
Keyword(s):  
Chemical Vapor Deposition ◽  
Boron Nitride ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Epitaxial Relationship ◽  
Out Of Plane ◽  
Α Al2o3 ◽  
Favorable Conditions ◽  
Relationship Of ◽  
Rhombohedral Boron

Epitaxial rhombohedral boron nitride films were deposited on α-Al2O3(001) substrates by chemical vapor deposition, using trimethylboron, ammonia, and with a low concentration of silane in the growth flux. The depositions were performed at temperatures from 1200 to 1485 °C, pressures from 30 to 90 mbar and N/B ratios from 321 to 1286. The most favorable conditions for epitaxy were: a temperature of 1400 °C, N/B around 964, and pressures below 40 mbar. Analysis by thin film X-ray diffraction showed that most deposited films were polytype-pure epitaxial r-BN with an out-of-plane epitaxial relationship of r-BN[001]∥ w-AlN[001]∥ α-Al2O3[001] and with two in-plane relationships of r-BN[110]∥ w-AlN[110]∥ α-Al2O3[100] and r-BN[110]∥ w-AlN[110]∥ α-Al2O3[1̅00] due to twinning.

High-Yield Synthesis of Rhombohedral Boron Nitride Triangular Nanoplates.

ChemInform ◽  
2007 ◽  
Vol 38 (43) ◽  
Author(s):  
Liqiang Xu ◽  
Jinhua Zhan ◽  
Junqing Hu ◽  
Yoshio Bando ◽  
Xiaoli Yuan ◽  
...  
Keyword(s):  
Boron Nitride ◽  
High Yield ◽  
Rhombohedral Boron

Erratum: Evidence for rhombohedral boron nitride in cubic boron nitride films grown by ion-assisted deposition

1995 ◽  
Vol 51 (15) ◽  
pp. 10264-10264 ◽  
Author(s):  
D. L. Medlin ◽  
T. A. Friedmann ◽  
P. B. Mirkarimi ◽  
M. J. Mills ◽  
K. F. McCarty
Keyword(s):  
Boron Nitride ◽  
Cubic Boron Nitride ◽  
Boron Nitride Films ◽  
Rhombohedral Boron

Chemical Vapor Deposition of Boron Nitride Thin Films on SiC

2015 ◽  
Vol 821-823 ◽  
pp. 990-994
Author(s):  
Mihail Chubarov ◽  
Henrik Pedersen ◽  
H. Högberg ◽  
Magnus Garbrecht ◽  
Zsolt Czigány ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Boron Nitride ◽  
Gas Phase ◽  
Recent Work ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Electric Properties ◽  
Rhombohedral Boron ◽  
Xrd And Tem

We give here an overview of our recent work on growth of rhombohedral boron nitride (r-BN) thin films on SiC substrates by chemical vapor deposition (CVD). We demonstrate the growth of twinned r-BN on various SiC polytypes at 1500 °C, using H2as carrier gas and triethyl boron and ammonia as precursors with an N/B ratio of ~ 640. The epitaxial relation with various substrates is determined from XRD and TEM. Adding Si to the gas phase stabilizes the r-BN phase but does not alter the electric properties of the material which remains electrically insulating.

scholarly journals Thermal Chemical Vapor Deposition of Epitaxial Rhombohedral Boron Nitride from Trimethylboron and Ammonia

2018 ◽  
Author(s):  
Laurent Souqui ◽  
Henrik Pedersen ◽  
Hans Högberg
Keyword(s):  
Chemical Vapor Deposition ◽  
Boron Nitride ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Epitaxial Relationship ◽  
Out Of Plane ◽  
Α Al2o3 ◽  
Favorable Conditions ◽  
Relationship Of ◽  
Rhombohedral Boron

Epitaxial rhombohedral boron nitride films were deposited on α-Al2O3(001) substrates by chemical vapor deposition, using trimethylboron, ammonia, and with a low concentration of silane in the growth flux. The depositions were performed at temperatures from 1200 to 1485 °C, pressures from 30 to 90 mbar and N/B ratios from 321 to 1286. The most favorable conditions for epitaxy were: a temperature of 1400 °C, N/B around 964, and pressures below 40 mbar. Analysis by thin film X-ray diffraction showed that most deposited films were polytype-pure epitaxial r-BN with an out-of-plane epitaxial relationship of r-BN[001]∥ w-AlN[001]∥ α-Al2O3[001] and with two in-plane relationships of r-BN[110]∥ w-AlN[110]∥ α-Al2O3[100] and r-BN[110]∥ w-AlN[110]∥ α-Al2O3[1̅00] due to twinning.

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