First-principles theoretical analysis and electron energy loss spectroscopy of vacancy defects in bulk and nonpolar ( 10 1 ¯ 0) surface of GaN

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Mit H. Naik ◽  
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Sonnada M. Shivaprasad
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Different levels of Ir doping at the LaAlO3/SrTiO3 interface affect the strain state in LaAlO3, as investigated using atomically resolved microscopy (HAADF-STEM), electron energy loss spectroscopy (EELS) and first-principles calculations (DFT).


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