scholarly journals Atomic layer deposition of a uniform thin film on two-dimensional transition metal dichalcogenides

2020 ◽  
Vol 38 (3) ◽  
pp. 030803 ◽  
Author(s):  
Taewook Nam ◽  
Seunggi Seo ◽  
Hyungjun Kim
Keyword(s):  
Thin Film ◽  
Transition Metal ◽  
Atomic Layer Deposition ◽  
Transition Metal Dichalcogenides ◽  
Atomic Layer ◽  
Two Dimensional ◽  
Layer Deposition ◽  
Metal Dichalcogenides

Recent Progress in Atomic Layer Deposition of Multifunctional Oxides and Two-Dimensional Transition Metal Dichalcogenides

2016 ◽  
Vol 04 (04) ◽  
pp. 1640010 ◽  
Author(s):  
Hongfei Liu
Keyword(s):  
Thin Films ◽  
Transition Metal ◽  
Atomic Layer Deposition ◽  
Recent Progress ◽  
Transition Metal Dichalcogenides ◽  
Atomic Layer ◽  
Two Dimensional ◽  
Layer Deposition ◽  
Metal Dichalcogenides ◽  
Multifunctional Oxides

Atomic layer deposition (ALD) has long been developed for conformal coating thin films on planar surfaces and complex structured substrates based on its unique sequential process and self-limiting surface chemistry. In general, the coated thin films can be dielectrics, semiconductors, conductors, metals, etc., while the targeted surface can vary from those of particles, wires, to deep pores, through holes, and so on. The ALD coating technique, itself, was developed from gas-phase chemical vapor deposition, but now it has been extended even to liquid phase coating/growth. Because the thickness of ALD growth is controlled in atomic level ([Formula: see text]0.1[Formula: see text]nm), it has recently been employed for producing two-dimensional (2D) materials, typically semiconducting nanosheets of transition metal dichalcogenides (TMDCs). In this paper, we briefly introduce recent progress in ALD of multifunctional oxides and 2D TMDCs with the focus being placed on suitable ALD precursors and their ALD processes (for both binary compounds and ternary alloys), highlighting the remaining challenges and promising potentials.

STM Tip-Induced Switching in Molybdenum Disulfide-Based Atomristors

MRS Advances ◽  
2019 ◽  
Vol 4 (48) ◽  
pp. 2609-2617 ◽  
Author(s):  
Jesse E. Thompson ◽  
Brandon T. Blue ◽  
Darian Smalley ◽  
Fernand Torres-Davila ◽  
Laurene Tetard ◽  
...  
Keyword(s):  
Thin Film ◽  
Transition Metal ◽  
Molybdenum Disulfide ◽  
Transition Metal Dichalcogenides ◽  
Scanning Tunneling ◽  
Two Dimensional ◽  
Tunneling Microscopy ◽  
Exfoliated Graphene ◽  
Two Dimensional Materials ◽  
Metal Dichalcogenides

ABSTRACTScanning tunneling microscopy and spectroscopy (STM/STS) are used to electronically switch atomically-thin memristors, referred to as “atomristors”, based on a graphene/molybdenum disulfide (MoS2)/Au heterostructure. A gold-assisted exfoliation method was used to produce near-millimeter (mm) scale MoS2 on Au thin-film substrates, followed by transfer of a separately exfoliated graphene top layer. Our results reveal that it is possible to switch the conductivity of a graphene/MoS2/Au memristor stack using an STM tip. These results provide a path to further studies of atomically-thin memristors fabricated from heterostructures of two-dimensional materials such as graphene and transition metal dichalcogenides (TMDs).

scholarly journals Substrate-Driven Atomic Layer Deposition of High-κ Dielectrics on 2D Materials

2021 ◽  
Vol 11 (22) ◽  
pp. 11052
Author(s):  
Emanuela Schilirò ◽  
Raffaella Lo Nigro ◽  
Fabrizio Roccaforte ◽  
Filippo Giannazzo
Keyword(s):  
Atomic Layer Deposition ◽  
2D Materials ◽  
Transition Metal Dichalcogenides ◽  
Atomic Layer ◽  
Cycle Number ◽  
Metallic Substrates ◽  
Layer Deposition ◽  
Structural And Electrical Properties ◽  
Out Of Plane ◽  
Metal Dichalcogenides

Atomic layer deposition (ALD) of high-κ dielectrics on two-dimensional (2D) materials (including graphene and transition metal dichalcogenides) still represents a challenge due to the lack of out-of-plane bonds on the pristine surfaces of 2D materials, thus making the nucleation process highly disadvantaged. The typical methods to promote the nucleation (i.e., the predeposition of seed layers or the surface activation via chemical treatments) certainly improve the ALD growth but can affect, to some extent, the electronic properties of 2D materials and the interface with high-κ dielectrics. Hence, direct ALD on 2D materials without seed and functionalization layers remains highly desirable. In this context, a crucial role can be played by the interaction with the substrate supporting the 2D membrane. In particular, metallic substrates such as copper or gold have been found to enhance the ALD nucleation of Al2O3 and HfO2 both on monolayer (1 L) graphene and MoS2. Similarly, uniform ALD growth of Al2O3 on the surface of 1 L epitaxial graphene (EG) on SiC (0001) has been ascribed to the peculiar EG/SiC interface properties. This review provides a detailed discussion of the substrate-driven ALD growth of high-κ dielectrics on 2D materials, mainly on graphene and MoS2. The nucleation mechanism and the influence of the ALD parameters (namely the ALD temperature and cycle number) on the coverage as well as the structural and electrical properties of the deposited high-κ thin films are described. Finally, the open challenges for applications are discussed.

scholarly journals Super-resolved Optical Mapping of Reactive Sulfur-Vacancies in Two-Dimensional Transition Metal Dichalcogenides

ACS Nano ◽  
2021 ◽  
Author(s):  
Miao Zhang ◽  
Martina Lihter ◽  
Tzu-Heng Chen ◽  
Michal Macha ◽  
Archith Rayabharam ◽  
...  
Keyword(s):  
Transition Metal ◽  
Optical Mapping ◽  
Transition Metal Dichalcogenides ◽  
Two Dimensional ◽  
Metal Dichalcogenides

Combined Healing and Doping of Transition Metal Dichalcogenides Through Molecular Functionalization

2021 ◽  
Author(s):  
Sai Manoj Gali ◽  
David Beljonne
Keyword(s):  
Transition Metal ◽  
Charge Transport ◽  
2D Materials ◽  
Transition Metal Dichalcogenides ◽  
Two Dimensional ◽  
Metal Dichalcogenides

Transition Metal Dichalcogenides (TMDCs) are emerging as promising two-dimensional (2D) materials. Yet, TMDCs are prone to inherent defects such as chalcogen vacancies, which are detrimental to charge transport. Passivation of...

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