Role of temperature on structure and electrical properties of titanium nitride films grown by low pressure plasma enhanced atomic layer deposition

2020 ◽  
Vol 38 (3) ◽  
pp. 032403 ◽  
Author(s):  
Igor Krylov ◽  
Yuanshen Qi ◽  
Valentina Korchnoy ◽  
Kamira Weinfeld ◽  
Moshe Eizenberg ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Atomic Layer Deposition ◽  
Titanium Nitride ◽  
Atomic Layer ◽  
Low Pressure ◽  
Pressure Plasma ◽  
Layer Deposition ◽  
Low Pressure Plasma

scholarly journals Effect of Oxygen Source on the Various Properties of SnO2 Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition

Coatings ◽  
2020 ◽  
Vol 10 (7) ◽  
pp. 692
Author(s):  
Jong Hyeon Won ◽  
Seong Ho Han ◽  
Bo Keun Park ◽  
Taek-Mo Chung ◽  
Jeong Hwan Han
Keyword(s):  
Electrical Properties ◽  
Atomic Layer Deposition ◽  
Carrier Concentration ◽  
High Mobility ◽  
Impurity Scattering ◽  
Atomic Layer ◽  
Growth Behavior ◽  
Layer Deposition ◽  
Growth Feature ◽  
O2 Plasma

Herein, we performed a comparative study of plasma-enhanced atomic layer deposition (PEALD) of SnO2 films using Sn(dmamp)2 as the Sn source and either H2O plasma or O2 plasma as the oxygen source in a wide temperature range of 100–300 °C. Since the type of oxygen source employed in PEALD determines the growth behavior and resultant film properties, we investigated the growth feature of both SnO2 PEALD processes and the various chemical, structural, morphological, optical, and electrical properties of SnO2 films, depending on the oxygen source. SnO2 films from Sn(dmamp)2/H2O plasma (SH-SnO2) and Sn(dmamp)2/O2 plasma (SO-SnO2) showed self-limiting atomic layer deposition (ALD) growth behavior with growth rates of ~0.21 and 0.07–0.13 nm/cycle, respectively. SO-SnO2 films showed relatively larger grain structures than SH-SnO2 films at all temperatures. Interestingly, SH-SnO2 films grown at high temperatures of 250 and 300 °C presented porous rod-shaped surface morphology. SO-SnO2 films showed good electrical properties, such as high mobility up to 27 cm2 V−1·s−1 and high carrier concentration of ~1019 cm−3, whereas SH-SnO2 films exhibited poor Hall mobility of 0.3–1.4 cm2 V−1·s−1 and moderate carrier concentration of 1 × 1017–30 × 1017 cm−3. This may be attributed to the significant grain boundary and hydrogen impurity scattering.

scholarly journals Tertiary alkyl halides as growth activator and inhibitor for novel atomic layer deposition of low resistive titanium nitride

AIP Advances ◽  
2021 ◽  
Vol 11 (1) ◽  
pp. 015218
Author(s):  
Changbong Yeon ◽  
Jaesun Jung ◽  
Hyeran Byun ◽  
Kok Chew Tan ◽  
Taeho Song ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Titanium Nitride ◽  
Atomic Layer ◽  
Alkyl Halides ◽  
Layer Deposition ◽  
Tertiary Alkyl

Electrical properties of 0.5 nm thick Hf-silicate top‐layer∕HfO2 gate dielectrics by atomic layer deposition

2005 ◽  
Vol 86 (22) ◽  
pp. 222904 ◽  
Author(s):  
Satoshi Kamiyama ◽  
Takayoshi Miura ◽  
Yasuo Nara ◽  
Tsunetoshi Arikado
Keyword(s):  
Electrical Properties ◽  
Atomic Layer Deposition ◽  
Gate Dielectrics ◽  
Atomic Layer ◽  
Layer Deposition

Atomic layer deposition of ternary ruthenates by combining metalorganic precursors with RuO4 as the co-reactant

2021 ◽  
Author(s):  
Matthias Marcus Minjauw ◽  
Ji-Yu Feng ◽  
Timo Sajavaara ◽  
Christophe Detavernier ◽  
Jolien Dendooven
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Ruthenium Tetroxide ◽  
Layer Deposition

In this work, the use of ruthenium tetroxide (RuO4) as a co-reactant for atomic layer deposition (ALD) is reported. The role of RuO4 as a co-reactant is twofold: it acts...

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