Optimization of buffer layers for InGaAs/AlGaAs PIN optical modulators grown on GaAs substrates by molecular beam epitaxy

2000 ◽  
Vol 18 (3) ◽  
pp. 1609 ◽  
Author(s):  
D. S. Katzer ◽  
W. S. Rabinovich ◽  
K. Ikossi-Anastasiou ◽  
G. C. Gilbreath
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Buffer Layers ◽  
Optical Modulators ◽  
Gaas Substrates

Defects in HgCdTe grown by molecular beam epitaxy on GaAs substrates

2012 ◽  
Vol 20 (4) ◽  
Author(s):  
I. Izhnin ◽  
A. Izhnin ◽  
H. Savytskyy ◽  
O. Fitsych ◽  
N. Mikhailov ◽  
...  
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Buffer Layers ◽  
Structural Defects ◽  
Donor Concentration ◽  
Ion Milling ◽  
Electrical And Optical Properties ◽  
Gaas Substrates ◽  
Cdte Buffer

AbstractThe Hall effect and photoluminescence measurements combined with annealing and/or ion milling were used to study the electrical and optical properties of HgCdTe films grown by molecular-beam epitaxy on GaAs substrates with ZnTe and CdTe buffer layers. Unintentional donor doping, likely from the substrate, which resulted in residual donor concentration of the order of 1015 cm−3, was observed in the films. Also, acceptor states, possibly related to structural defects, were observed.

Molecular Beam Epitaxy of GaSb on GaAs Substrates with Compositionally Graded LT-GaAs x Sb 1- x Buffer Layers

2017 ◽  
Vol 34 (1) ◽  
pp. 018101
Author(s):  
Hai-Long Yu ◽  
Hao-Yue Wu ◽  
Hai-Jun Zhu ◽  
Guo-Feng Song ◽  
Yun Xu
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Buffer Layers ◽  
Gaas Substrates ◽  
Lt Gaas

Molecular beam epitaxy of GaSb on GaAs substrates with AlSb/GaSb compound buffer layers

2010 ◽  
Vol 519 (1) ◽  
pp. 228-230 ◽  
Author(s):  
Ruiting Hao ◽  
Shukang Deng ◽  
Lanxian Shen ◽  
Peizhi Yang ◽  
Jielei Tu ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Buffer Layers ◽  
Gaas Substrates

Molecular Beam Epitaxy of GaSb on GaAs Substrates with AlSb Buffer Layers

2009 ◽  
Vol 26 (1) ◽  
pp. 018101 ◽  
Author(s):  
Zhou Zhi-Qiang ◽  
Xu Ying-Qiang ◽  
Hao Rui-Ting ◽  
Tang Bao ◽  
Ren Zheng-Wei ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Buffer Layers ◽  
Gaas Substrates

Band Edge Optical Absorption of Molecular Beam Epitaxial GaSb Grown on Semi-Insulating GaAs Substrate

1993 ◽  
Vol 325 ◽  
Author(s):  
M. Shah ◽  
M.O. Manasreh ◽  
R. Kaspi ◽  
M. Y. Yen ◽  
B. A. Philips ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Optical Absorption ◽  
Gaas Substrate ◽  
Molecular Beam ◽  
Free Exciton ◽  
Buffer Layers ◽  
Band Edge ◽  
Exciton Absorption ◽  
Molecular Beam Epitaxial ◽  
Gaas Substrates

AbstractThe optical absorption of the band edge of GaSb layers grown on semi-insulating GaAs substrates by the molecular beam epitaxy (MBE) technique is studied as a function of temperature. A free exciton absorption peak at 0.807 eV was observed at 10 K. The free exciton line is observed in either thick samples (5μm thick) or samples with ∼0.1 μm thick AlSb buffer layers. The latter samples suggest that the AlSb buffer layer is very effective in preventing some of the dislocations from propagating into the MBE GaSb layers. The fitting of the band gap of the GaSb layers as a function of temperature gives a Debye temperature different than that of the bulk GaSb calculated from the elastic constants.

Study of the crystal quality and Ga-segregation in ZnSe films grown by molecular beam epitaxy on AlxGa1−xAs and InxGa1−xAs buffer layers on GaAs substrates

2001 ◽  
Vol 227-228 ◽  
pp. 639-644 ◽  
Author(s):  
V.H Méndez-Garcı́a ◽  
M López-López ◽  
A Lastras-Martı́nez ◽  
M.A Vidal ◽  
J Luyo-Alvarado ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Buffer Layers ◽  
Crystal Quality ◽  
Gaas Substrates

Gas Source Molecular Beam Epitaxy of ZnSe on (In,Ga)P

1994 ◽  
Vol 340 ◽  
Author(s):  
K. Lu ◽  
P.A. Fisher ◽  
E. Ho ◽  
J.L. House ◽  
G.S. Petrich ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Critical Thickness ◽  
Buffer Layers ◽  
Ex Situ ◽  
Material System ◽  
Lattice Constants ◽  
Gas Source ◽  
Gaas Substrates ◽  
Lattice Matched

ABSTRACTThe wide bandgap semiconductor ZnSe has been nucleated on epitaxial (In,Ga)P buffer layers (on GaAs substrates) having various In compositions, and hence various lattice constants. The III-V ternary alloy offers a wide range of lattice constants for the heteroepitaxy of a multitude of potential II-VI light emitting devices, such as blue pn injection lasers composed of the (Zn,Mg)(S,Se) material system. Since the II-VI and III-V layers are grown using gas source molecular beam epitaxy in separate dedicated reactors, the technique of amorphous As deposition is employed to passivate the (In,Ga)P surface prior to the ex situ transfer. High resolution double crystal x-ray diffraction measurements on the ZnSe/(In,Ga)P/GaAs heterostructures indicate that for In compositions of 50-52%, the buffer layers with a thickness of 4 μm were only partially relaxed on the GaAs substrates, with the residual mismatch remaining at the ZnSe/III-V heterointerface. The critical thickness of (In,Ga)P, with In concentrations near 52-56%, on GaAs greatly exceeds the predicted critical thickness from either the energy balancing or force balancing model. For an In composition of 56% (and a film thickness of 4 μm), the buffer layers contain an in-plane lattice constant equal to that of ZnSe, and therefore represent the lattice-matched condition, even though the film is not fully relaxed. For (In,Ga)P buffer layers lattice-matched to ZnSe, but mismatched to GaAs, the surface exhibits the expected cross-hatched surface morphology. The occurrence of the cross-hatched surface is significantly alleviated by the addition of a pseudomorphic layer of GaAs positioned between the ZnSe and (In,Ga)P layer.

Sign in / Sign up

Export Citation Format

Share Document