Characterization of in situ etched and molecular beam epitaxy regrown GaAs interfaces using capacitance–voltage measurements, far infrared spectroscopy, and magnetotransport measurements

2000 ◽  
Vol 18 (3) ◽  
pp. 1562 ◽  
Author(s):  
C. Klein ◽  
S. Kramp ◽  
S. Beyer ◽  
Ch. Heyn ◽  
W. Hansen ◽  
...  
Keyword(s):  
Infrared Spectroscopy ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Far Infrared ◽  
Far Infrared Spectroscopy ◽  
Capacitance Voltage

Far infrared spectroscopy of thin epitaxial layers of GaN deposited by molecular beam epitaxy on GaP substrates

1996 ◽  
Vol 37 (3) ◽  
pp. 389-394 ◽  
Author(s):  
G. Mirjalili ◽  
T. Dumelow ◽  
T.J. Parker ◽  
S. Farjami Shayesteh ◽  
T.S. Cheng ◽  
...  
Keyword(s):  
Infrared Spectroscopy ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Far Infrared ◽  
Epitaxial Layers ◽  
Far Infrared Spectroscopy

Cell and optics design for in situ far-infrared spectroscopy of electrode surfaces

1996 ◽  
Vol 41 (5) ◽  
pp. 637-640 ◽  
Author(s):  
Andrea E. Russell ◽  
Lavan Rubasingham ◽  
Patrick L. Hagans ◽  
Todd H. Ballinger
Keyword(s):  
Infrared Spectroscopy ◽  
Far Infrared ◽  
Far Infrared Spectroscopy ◽  
Electrode Surfaces ◽  
Optics Design

In-Situ Characterization of II-VI Molecular Beam Epitaxy

1995 ◽  
Vol 187 (2) ◽  
pp. 309-313
Author(s):  
J. M. Gaines ◽  
C. A. Ponzoni
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
In Situ Characterization
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