Substrate transfer process for InP-based heterostructure barrier varactor devices

2000 ◽  
Vol 18 (1) ◽  
pp. 150 ◽  
Author(s):  
S. Arscott ◽  
P. Mounaix ◽  
D. Lippens
Keyword(s):  
Transfer Process ◽  
Heterostructure Barrier Varactor ◽  
Substrate Transfer

Wafer bow of substrate transfer process for GaNLED on Si 8 inch

2012 ◽  
Author(s):  
N. P. Pham ◽  
M. Rosmeulen ◽  
G. Bryce ◽  
D. S. Tezcan ◽  
B. Majeed ◽  
...  
Keyword(s):  
Transfer Process ◽  
Substrate Transfer

InP-Si BiCMOS Heterointegration Using a Substrate Transfer Process

2013 ◽  
Vol 53 (3) ◽  
pp. 245-254 ◽  
Author(s):  
M. Lisker ◽  
A. Trusch ◽  
A. Kruger ◽  
M. Fraschke ◽  
P. Kulse ◽  
...  
Keyword(s):  
Transfer Process ◽  
Substrate Transfer

InP-Si BiCMOS Heterointegration Using a Substrate Transfer Process

2013 ◽  
Vol 3 (2) ◽  
pp. P17-P20 ◽  
Author(s):  
M. Lisker ◽  
A. Trusch ◽  
A. Krüger ◽  
M. Fraschke ◽  
P. Kulse ◽  
...  
Keyword(s):  
Transfer Process ◽  
Substrate Transfer

Mechanical Strain for 0.16 µm nMOSFET on 30 µm Si-Substrate

2011 ◽  
Vol 87 ◽  
pp. 129-131
Author(s):  
H. L. Kao ◽  
J. Y. Ke ◽  
M. T. Chen ◽  
Y. C. Lee ◽  
C. S. Yeh ◽  
...  
Keyword(s):  
Transfer Process ◽  
Mechanical Strain ◽  
Bonding Process ◽  
Well Performance ◽  
Si Substrate ◽  
3D Integration ◽  
Alternative Substrate ◽  
Dc Characteristics ◽  
Substrate Transfer

This paper reports the successful substrate transfer based on standard IC processing to an alternative substrate e.g. plastic. The device on ultra-thin Si substrate using grinding backside Si and thermo-compression bonding process is proposed. Acceptable electrical performances are achieved means that the substrate transfer process is controlled well. The DC characteristics of nMOSFETs as a function of orientations and device sizes under mechanical strain are also reported. Good performance and reliability of nMOSFETs under mechanical strain is obtained. The results suggest the feasibility of substrate transfer in achieving well-performance nMOSFETs for 3D integration or SiP technologies.

Substrate Transfer for GaN based LEDs grown on Silicon

2011 ◽  
Vol 2011 (1) ◽  
pp. 000130-000135 ◽  
Author(s):  
Nga P. Pham ◽  
Maarten Rosmeulen ◽  
Cindy Demeulemeester ◽  
Vasyl Motsnyi ◽  
Deniz S. Tezcan ◽  
...  
Keyword(s):  
Transfer Process ◽  
Extraction Efficiency ◽  
High Stress ◽  
Wet Etching ◽  
Light Extraction Efficiency ◽  
Surface Roughening ◽  
Bonding Layer ◽  
Si Substrates ◽  
Metallic Bonding ◽  
Substrate Transfer

This paper focuses on the substrate transfer process which is applied after the fabrication of LEDs on 4 inch Si (111) wafers comprising p and n contact formation to the GaN layer. After applying a passivation layer, a bonding metal is deposited. The wafer is then bonded to a Si carrier substrate using metallic bonding. Next, the original Si (111) substrate is completely removed by grinding and wet etching. GaN-LEDs are thus transferred to a new carrier substrate. The last step is etching of the transferred GaN layer from the back to open the contacts. A surface roughening technique on the backside of the transferred GaN layer to improve the light extraction efficiency of GaN-LEDs is also investigated. All the issues of the substrate transfer process steps such as permanent Cu/Sn bonding, thinning by grinding and wet etching will be discussed in detailed. A typical issue occurring during processing of GaN-LEDs on Si substrates is high stress and related large wafer bow originating from the GaN layer and the thick Cu/Sn metal bonding layer. Such a large wafer bow causes problems for some automatic handling tools and processes like lithography. Solutions to manage the stress and wafer bow have been investigated.

STRUCTURING A SUCCESSFUL INFORMATION TECHNOLOGY TRANSFER PROCESS: A CASE STUDY FROM THE PERSPECTIVES OF ACTOR NETWORK THEORY

2010 ◽  
Author(s):  
Huda Ibrahim ◽  
Hasmiah Kasimin
Keyword(s):  
Information Technology ◽  
Technology Transfer ◽  
Transfer Process ◽  
Network Theory ◽  
Actor Network Theory ◽  
Developed Countries ◽  
Local Market ◽  
Private Company ◽  
Actor Network ◽  
Technology Transfer Process

An effi cient and effective information technology transfer from developed countries to Malaysia is an important issue as a prerequisite to support the ICT needs of the country to become not only a ICT user but also a ICT producer. One of the factors that infl uences successful information technology transfer is managing the process of how technology transfer occurs in one environment. It involves managing interaction between all parties concerned which requires an organized strategy and action toward accomplishing technology transfer objective in an integrated and effective mode. Using a conceptual framework based on the Actor Network Theory (ANT), this paper will analyse a successful information technology transfer process at a private company which is also a supplier of information technology (IT) products to the local market. This framework will explain how the company has come up with a successful technology transfer in a local environment. Our study shows that the company had given interest to its relationships with all the parties involved in the transfer process. The technology transfer programme and the strategy formulated take into account the characteristics of technology and all those involved.  

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