Blueshift of In[sub 0.2]Ga[sub 0.8]N/GaN single quantum well band gap energy by rapid thermal annealing

1999 ◽  
Vol 17 (4) ◽  
pp. 1507 ◽  
Author(s):  
G. Li ◽  
S. J. Chua ◽  
J. H. Teng ◽  
W. Wang ◽  
Z. C. Feng ◽  
...  
Keyword(s):  
Quantum Well ◽  
Band Gap ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Band Gap Energy ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Gap Energy

scholarly journals Fabrication of Cu2ZnSnS4 Thin Films Based on Facile Nanocrystals-Printing Approach with Rapid Thermal Annealing (RTA) Process

Coatings ◽  
2019 ◽  
Vol 9 (2) ◽  
pp. 130 ◽  
Author(s):  
Jin Chen ◽  
Fengchao Wang ◽  
Bobo Yang ◽  
Xiaogai Peng ◽  
Qinmiao Chen ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Band Gap ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Band Gap Energy ◽  
Czts Thin Film ◽  
Gap Energy ◽  
Thermal Solution ◽  
Absorbing Layer

In the current study, Cu2ZnSnS4 (CZTS) thin film was successfully fabricated by the facile nanocrystals (NCs)-printing approach combined with rapid thermal annealing (RTA) process. Firstly, the CZTS NCs were synthesized by a thermal solution method and the possible formation mechanism was analyzed briefly. Then the influences of RTA toleration temperature and duration time on the various properties of as-printed thin films were examined via XRD, Raman, FE-SEM, UV-vis-IR spectroscopy, EDS and XPS treatments in detail. As observed, the RTA factors of temperature and time had significant impacts on the structure and morphology of as-prepared thin films, while there were no obvious effects on the band gap energy in studied conditions. The results showed that the obtained thin film at optimal RTA conditions of (600 °C, 20 min) featured a kesterite structure in pure phase and an irregular morphology consisting of large grains. Moreover, the satisfactory composition of a Cu-poor, Zn-rich state and an ideal band gap energy of 1.4 eV suggests that as-fabricated CZTS thin film is a suitable light-absorbing layer candidate for the application in thin film solar cells.

Effect of Thermal Annealing on the Photoluminescence Properties of a GaInNAs/GaAs Single Quantum Well

2000 ◽  
Vol 639 ◽  
Author(s):  
Laurent Grenouillet ◽  
Catherine Bru-Chevallier ◽  
Gérard Guillot ◽  
Philippe Gilet ◽  
Philippe Ballet ◽  
...  
Keyword(s):  
Quantum Well ◽  
Thermal Annealing ◽  
Low Temperatures ◽  
Blue Shift ◽  
Emission Peak ◽  
Single Quantum ◽  
Photoluminescence Properties ◽  
Single Quantum Well ◽  
Peak Energy ◽  
Strong Blue Shift

ABSTRACTWe report on the effect of thermal annealing on the photoluminescence properties of a Ga0.65In0.35N0.02As0.98/GaAs single quantum well. Thermal annealing is shown to decrease the strong nitrogen-induced localization effects observed at low temperatures and to reduce the full width at half maximum of the emission peak. It also induces a strong blue shift of the emission peak energy, which is thought not to arise from an In-Ga interdiffusion alone, as it is much larger than in a nitrogen-free reference single quantum well.

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