Effect of surface treatment by (NH[sub 4])[sub 2]S[sub x] solution on the reduction of ohmic contact resistivity of p-type GaN
1999 ◽
Vol 17
(2)
◽
pp. 497
◽
2001 ◽
Vol 1
(4-5)
◽
pp. 385-388
◽
1999 ◽
Vol 176
(1)
◽
pp. 763-766
◽
Reduction of ohmic contact resistivity on p-GaN using N2plasma surface treatment at room temperature
2006 ◽
Vol 21
(12)
◽
pp. 1597-1599
◽
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