Microfabrication and characterization of gridded polycrystalline silicon field emitter devices

1998 ◽  
Vol 16 (2) ◽  
pp. 796 ◽  
Author(s):  
S. E. Huq
Keyword(s):  
Polycrystalline Silicon ◽  
Field Emitter

Fabrication and Characterization of Diamond-Clad Silicon Field Emitter Arrays

1995 ◽  
Vol 34 (Part 1, No. 12B) ◽  
pp. 6926-6931 ◽  
Author(s):  
Huang-Chung Cheng ◽  
Tzu-Kun Ku ◽  
Biing-Bang Hsieh ◽  
Sheng-Hsiung Chen ◽  
Shye-Yuh Leu ◽  
...  
Keyword(s):  
Field Emitter ◽  
Field Emitter Arrays ◽  
Fabrication And Characterization

Microwave characterization of undoped polycrystalline silicon

2006 ◽  
Vol 35 (6) ◽  
pp. 350-353
Author(s):  
P. A. Borodovskii ◽  
A. F. Buldygin ◽  
A. T. Drofa ◽  
A. S. Tokarev
Keyword(s):  
Polycrystalline Silicon ◽  
Microwave Characterization

Polycrystalline Silicon Gettering Layers with Controlled Residual Stress

2013 ◽  
Vol 205-206 ◽  
pp. 284-289 ◽  
Author(s):  
David Lysáček ◽  
Petr Kostelník ◽  
Petr Pánek
Keyword(s):  
Residual Stress ◽  
Vapor Deposition ◽  
Polycrystalline Silicon ◽  
Opposite Sign ◽  
Chemical Vapor ◽  
Pressure Chemical ◽  
Novel Method ◽  
The Individual ◽  
Scanning Electron

We report on a novel method of low pressure chemical vapor deposition of polycrystalline silicon layers used for external gettering in silicon substrate for semiconductor applications. The proposed method allowed us to produce layers of polycrystalline silicon with pre-determined residual stress. The method is based on the deposition of a multilayer system formed by two layers. The first layer is intentionally designed to have tensile stress while the second layer has compressive stress. Opposite sign of the residual stresses of the individual layers enables to pre-determine the residual stress of the gettering stack. We used scanning electron microscopy for structural characterization of the layers and intentional contamination for demonstration of the gettering properties. Residual stress of the layers was calculated from the wafer curvature.

Optical characterization of polycrystalline silicon before and after thermal oxidation

1985 ◽  
Vol 125 (3-4) ◽  
pp. 235-241 ◽  
Author(s):  
P. Montaudon ◽  
M.H. Debroux ◽  
F. Ferrieu ◽  
A. Vareille
Keyword(s):  
Thermal Oxidation ◽  
Polycrystalline Silicon ◽  
Optical Characterization ◽  
Before And After

Characterization of High-Performance Polycrystalline Silicon Complementary Metal–Oxide–Semiconductor Circuits

2007 ◽  
Vol 46 (1) ◽  
pp. 51-55 ◽  
Author(s):  
Genshiro Kawachi ◽  
Yoshiaki Nakazaki ◽  
Hiroyuki Ogawa ◽  
Masayuki Jyumonji ◽  
Noritaka Akita ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Polycrystalline Silicon ◽  
High Performance ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Semiconductor Circuits

Electrical and Noise Characterization of Large-Grain Polycrystalline Silicon Thin-Film Transistors

2001 ◽  
Vol 80-81 ◽  
pp. 367-372
Author(s):  
F.V. Farmakis ◽  
D.M. Tsamados ◽  
J. Brini ◽  
G. Kamarinos ◽  
C.A. Dimitriadis
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Silicon Thin Film ◽  
Noise Characterization
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