Solid source molecular beam epitaxial growth of In[sub 0.5]Ga[sub 0.5]P pseudomorphic high electron mobility transistor structures

W. E. Hoke

doi:10.1116/1.590085

Solid source molecular beam epitaxial growth of In[sub 0.5]Ga[sub 0.5]P pseudomorphic high electron mobility transistor structures

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.590085 ◽

1998 ◽

Vol 16 (3) ◽

pp. 1408 ◽

Cited By ~ 4

Author(s):

W. E. Hoke

Keyword(s):

Epitaxial Growth ◽

Electron Mobility ◽

Molecular Beam ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility ◽

Molecular Beam Epitaxial ◽

Molecular Beam Epitaxial Growth

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Molecular beam epitaxial growth and device performance of metamorphic high electron mobility transistor structures fabricated on GaAs substrates

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.590707 ◽

1999 ◽

Vol 17 (3) ◽

pp. 1131 ◽

Cited By ~ 84

Author(s):

W. E. Hoke ◽

P. J. Lemonias ◽

J. J. Mosca ◽

P. S. Lyman ◽

A. Torabi ◽

...

Keyword(s):

Epitaxial Growth ◽

Electron Mobility ◽

Molecular Beam ◽

High Electron Mobility Transistor ◽

Device Performance ◽

High Electron ◽

High Electron Mobility ◽

Molecular Beam Epitaxial ◽

Gaas Substrates ◽

Molecular Beam Epitaxial Growth

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Molecular beam epitaxial growth of metamorphic AlInSb/GaInSb high-electron-mobility-transistor structures on GaAs substrates for low power and high frequency applications

Journal of Applied Physics ◽

10.1063/1.3544041 ◽

2011 ◽

Vol 109 (3) ◽

pp. 033706 ◽

Cited By ~ 5

Author(s):

R. Loesch ◽

R. Aidam ◽

L. Kirste ◽

A. Leuther

Keyword(s):

Epitaxial Growth ◽

Electron Mobility ◽

High Frequency ◽

Molecular Beam ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility ◽

Molecular Beam Epitaxial ◽

Gaas Substrates ◽

Molecular Beam Epitaxial Growth

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Molecular beam epitaxial growth of ultralow absorption GaN high electron mobility transistor material on sapphire substrates for infrared transparent conductors

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.4769895 ◽

2013 ◽

Vol 31 (3) ◽

pp. 03C101

Author(s):

William E. Hoke ◽

Amanda J. Kirchner ◽

John J. Mosca ◽

Daniel P. Resler ◽

Theodore D. Kennedy ◽

...

Keyword(s):

Epitaxial Growth ◽

Electron Mobility ◽

Molecular Beam ◽

High Electron Mobility Transistor ◽

Transparent Conductors ◽

High Electron ◽

High Electron Mobility ◽

Molecular Beam Epitaxial ◽

Sapphire Substrates ◽

Molecular Beam Epitaxial Growth

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Molecular beam epitaxial growth and properties of GaAs pseudomorphic high electron mobility transistors on silicon composite substrates

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.3322737 ◽

2010 ◽

Vol 28 (3) ◽

pp. C3H1-C3H4 ◽

Cited By ~ 2

Author(s):

W. E. Hoke ◽

T. D. Kennedy ◽

J. R. LaRoche ◽

A. Torabi ◽

J. P. Bettencourt ◽

...

Keyword(s):

Epitaxial Growth ◽

Electron Mobility ◽

Molecular Beam ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Molecular Beam Epitaxial ◽

Electron Mobility Transistors ◽

Molecular Beam Epitaxial Growth ◽

Composite Substrates

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Optimized molecular beam epitaxial growth temperature profile for high-performance AlInAs/GaInAs single quantum well high electron mobility transistor structures

Journal of Crystal Growth ◽

10.1016/0022-0248(95)80137-2 ◽

1995 ◽

Vol 150 ◽

pp. 1241-1245

Author(s):

H. Künzel ◽

J. Böttcher ◽

A. Hase ◽

S. Strähle ◽

E. Kohn

Keyword(s):

Epitaxial Growth ◽

High Performance ◽

Molecular Beam ◽

High Electron Mobility Transistor ◽

High Electron ◽

Single Quantum ◽

Single Quantum Well ◽

High Electron Mobility ◽

Molecular Beam Epitaxial ◽

Molecular Beam Epitaxial Growth

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Molecular-beam epitaxial growth of high electron mobility AlGaN/GaN heterostructures

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.591406 ◽

2000 ◽

Vol 18 (3) ◽

pp. 1472 ◽

Cited By ~ 2

Author(s):

L. K. Li ◽

B. Turk ◽

W. I. Wang ◽

S. Syed ◽

D. Simonian ◽

...

Keyword(s):

Epitaxial Growth ◽

Electron Mobility ◽

Molecular Beam ◽

High Electron ◽

High Electron Mobility ◽

Molecular Beam Epitaxial ◽

Molecular Beam Epitaxial Growth

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Molecular beam epitaxial growth of pseudomorphic InAlAs/InGaAs high electron mobility transistors with high cut-off frequencies

Journal of Crystal Growth ◽

10.1016/0022-0248(95)80139-4 ◽

1995 ◽

Vol 150 ◽

pp. 1252-1255 ◽

Cited By ~ 8

Author(s):

W. Klein ◽

G. Böhm ◽

H. Heiss ◽

S. Kraus ◽

D. Xu ◽

...

Keyword(s):

Epitaxial Growth ◽

Electron Mobility ◽

Molecular Beam ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Molecular Beam Epitaxial ◽

Electron Mobility Transistors ◽

Molecular Beam Epitaxial Growth

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Molecular beam epitaxial growth of high electron mobility deep quantum well structures

Journal of Crystal Growth ◽

10.1016/s0022-0248(96)00975-x ◽

1997 ◽

Vol 175-176 ◽

pp. 868-872 ◽

Cited By ~ 11

Author(s):

Naohiro Kuze ◽

Hiromasa Goto ◽

Masahiro Matsui ◽

Ichiro Shibasaki ◽

Hiroyuki Sakaki

Keyword(s):

Quantum Well ◽

Epitaxial Growth ◽

Electron Mobility ◽

Molecular Beam ◽

High Electron ◽

High Electron Mobility ◽

Quantum Well Structures ◽

Molecular Beam Epitaxial ◽

Molecular Beam Epitaxial Growth

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Molecular beam epitaxial growth and characterization of strain-compensated Al[sub 0.3]In[sub 0.7]P/InP/Al[sub 0.3]In[sub 0.7]P metamorphic–pseudomorphic high electron mobility transistors on GaAs substrates

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.1374629 ◽

2001 ◽

Vol 19 (4) ◽

pp. 1519 ◽

Cited By ~ 4

Author(s):

W. E. Hoke ◽

P. J. Lemonias ◽

T. D. Kennedy ◽

A. Torabi ◽

E. K. Tong ◽

...

Keyword(s):

Epitaxial Growth ◽

Molecular Beam ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Molecular Beam Epitaxial ◽

Electron Mobility Transistors ◽

Gaas Substrates ◽

Molecular Beam Epitaxial Growth

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Molecular-beam epitaxial growth of high quality, double channel AlGaAs/InGaAs pulse-doped pseudomorphic high electron mobility transistors

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.586405 ◽

1992 ◽

Vol 10 (2) ◽

pp. 1026

Author(s):

W. E. Hoke

Keyword(s):

Epitaxial Growth ◽

Molecular Beam ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Quality ◽

High Electron Mobility ◽

Molecular Beam Epitaxial ◽

Electron Mobility Transistors ◽

Molecular Beam Epitaxial Growth ◽

Double Channel

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