Growth of GaN on lithium gallate substrates for development of a GaN thin compliant substrate

Author(s):  
William A. Doolittle
1999 ◽  
Vol 570 ◽  
Author(s):  
W. A. Doolittle ◽  
A. S. Brown

ABSTRACTRecent results indicate that compliant substrates offer significant promise as a new approach for strain management in semiconductors. The potential applications include 1) the growth of device-quality highly mismatched materials on dissimilar substrates, and 2) the lateral control of material properties resulting from the effects of strain on bandstructure and/or growth dynamics. A significant amount of research in this area is dedicated to the reduction of extrinsic processing effects resulting from compliant substrate fabrication, and the development of simple models for understanding the observed reduction in defect density and/or strain in the epitaxial films grown on compliant substrates. A recent focus in our work has been on the growth of GaN on a novel and easily removable substrate -lithium gallate- for the regrowth on a bonded GaN template. The first step in this approach is the optimization of the growth of GaN on lithium gallate. In addition, this approach requires the use of an appropriate bonding layer to reduce the strain or defect production during growth due to coefficient of thermal expansion mismatches between the GaN sample and the handle wafer. Our work in this area will be highlighted in the context of an overview of various compliant substrate approaches and current results that indicate their efficacy.


2002 ◽  
Vol 243 (1) ◽  
pp. 71-76 ◽  
Author(s):  
Zhicheng Zhang ◽  
Shaoyan Yang ◽  
Fuqiang Zhang ◽  
Dabing Li ◽  
Yonghai Chen ◽  
...  

2013 ◽  
Vol 528 ◽  
pp. 194-198 ◽  
Author(s):  
X. Boddaert ◽  
G. Covarel ◽  
B. Bensaid ◽  
M. Mattei ◽  
P. Benaben ◽  
...  

2007 ◽  
Vol 90 (21) ◽  
pp. 211912 ◽  
Author(s):  
Juil Yoon ◽  
Zhen Zhang ◽  
Nanshu Lu ◽  
Zhigang Suo

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