Analysis of electron emission degradation in silicon field emitter arrays

Author(s):  
Yoon-Ho Song
1996 ◽  
Vol 424 ◽  
Author(s):  
S. L. Skala ◽  
D. A. Ohlberg ◽  
A. A. Talin ◽  
T. E. Felter

ABSTRACTThe electron emission properties of a Spindt-type field emitter array have been measured before and after deposition of approximately 100 Å of gold. The workfunction of the emitter decreased by 5% after gold deposition resulting in an 11% reduction in turn-on voltage. Emission stability as measured by RMS current noise improved by 40%. Improvements in emission do not withstand exposure to air. However, baking at moderate temperatures (200°C) restores the emission improvements obtained with the gold overcoating. Fowler-Nordheim plots show that the enhanced emission after baking is due to a increase of the Fowler-Nordheim intercept and not a decrease in slope. Additionally, the gold over coatings resist poisoning as a 50,000 L dose of oxygen only slightly affects emission.


2003 ◽  
Vol 82 (19) ◽  
pp. 3299-3301 ◽  
Author(s):  
D. S. Seo ◽  
C. O. Kim ◽  
J. P. Hong ◽  
J. S. Shin ◽  
B. K. Song ◽  
...  

2000 ◽  
Vol 87 (10) ◽  
pp. 7349-7353 ◽  
Author(s):  
Jong-Lam Lee ◽  
Sang Pyo Oh ◽  
Sang Youn Han ◽  
Seung-Youl Kang ◽  
Jin Ho Lee ◽  
...  

1999 ◽  
Vol 38 (Part 1, No. 12B) ◽  
pp. 7208-7212 ◽  
Author(s):  
Oguz Yavas ◽  
Takeshi Hashimoto ◽  
Naoki Suzuki ◽  
Mikio Takai ◽  
Michihiro Kobayashi ◽  
...  

1998 ◽  
Vol 509 ◽  
Author(s):  
Seung -Chul Ha ◽  
Dae-Hwan Kang ◽  
Byung-Sung Kim ◽  
Seok-Hong Min ◽  
Ki-Bum Kim

AbstractA novel processing sequence for the formation of gated diamond field emitter arrays (triode system) is proposed and the feasibility is tested by investigating the field emission property. The processing scheme is based on the selective deposition of diamond using the well established nucleation enhanced process on silicon substrate, so called bias enhanced nucleation (BEN). Selective deposition of diamond using the same process was also demonstrated on titanium nitride (TIN) electrode layer. Our preliminary results show that the diamond field emitter is turned on at around 97 V/μm with the current level of about several μA.


1997 ◽  
Vol 498 ◽  
Author(s):  
T. G. McCauley ◽  
T. D. Corrigan ◽  
A. R. Krauss ◽  
O. Auciello ◽  
D. Zhou ◽  
...  

ABSTRACTIn this paper, we report on a substantial lowering of the threshold field for electron field emission from Si field emitter arrays (FEA), which have been coated with a thin layer of nanocrystalline diamond by microwave plasma-assisted chemical vapor deposition (MPCVD) from fullerene (C60) and methane (CH4) precursors. The field emission characteristics were investigated and the emission sites imaged using photoelectron emission microscopy (PEEM). Electron emission from these Si FEAs coated with nanocrystalline diamond was observed at threshold fields as low as 3 V/μm, with effective work functions as low as 0.59 eV.


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