Fabrication of metal field emitter arrays for low voltage and high current operation

1998 ◽  
Vol 16 (2) ◽  
pp. 807 ◽  
Author(s):  
Chang Woo Oh
Keyword(s):  
Low Voltage ◽  
High Current ◽  
Field Emitter ◽  
Field Emitter Arrays ◽  
Current Operation

Graphene Nanotubule Cold Field Emission Electron Sources

1994 ◽  
Vol 349 ◽  
Author(s):  
B. H. Fishbine ◽  
C. J. Miglionico ◽  
K. E. Hackett ◽  
K. J. Hendricks
Keyword(s):  
Field Emission ◽  
Current Density ◽  
High Current Density ◽  
High Current ◽  
Field Emitter ◽  
Electron Sources ◽  
Field Emitter Arrays ◽  
Emission Electron ◽  
Emitter Array ◽  
Field Emitter Array

ABSTRACTBuckytubes are considered for high current density cold field emitter array electron sources. They may provide more stable, higher-brightness emission than existing cold field emitter arrays.

Fabrication of large-area ZnO nanowire field emitter arrays by thermal oxidation for high-current application

2019 ◽  
Vol 484 ◽  
pp. 966-974 ◽  
Author(s):  
Libin Wang ◽  
Yangyang Zhao ◽  
Keshuang Zheng ◽  
Juncong She ◽  
Shaozhi Deng ◽  
...  
Keyword(s):  
Thermal Oxidation ◽  
High Current ◽  
Zno Nanowire ◽  
Large Area ◽  
Current Application ◽  
Field Emitter ◽  
Field Emitter Arrays

Very High On/Off Ratio in Vertical-Type Metal-Base Organic Transistors

2006 ◽  
Vol 965 ◽  
Author(s):  
Ken-ichi Nakayama ◽  
Masaaki Yokoyama
Keyword(s):  
Heat Treatment ◽  
Leakage Current ◽  
Vertical Structure ◽  
Low Voltage ◽  
Organic Transistors ◽  
High Current ◽  
Metal Base ◽  
Base Electrode ◽  
Current Operation ◽  
Very High

ABSTRACTThe on/off ratio of the vertical-type metal-base organic transistors was drastically improved by heat treatment in air. The heat treatment after deposition of the collector layer and base electrode reduced the leakage current between the base and collector, resulting in remarkable suppression of the off current. As a result, in addition to the advantage of low voltage and high current operation based on the vertical structure, very high on/off ratio exceeding 105 was achieved.

SEM and Field Mmission study of silicon field emitter array

1992 ◽  
Vol 50 (2) ◽  
pp. 1140-1141
Author(s):  
Jiang Liu ◽  
John J. Hren
Keyword(s):  
Silicon Oxide ◽  
Low Voltage ◽  
Radius Of Curvature ◽  
Geometrical Shape ◽  
Geometrical Structures ◽  
Field Emitter ◽  
Field Emitter Arrays ◽  
Sem Micrograph ◽  
High Emission ◽  
Device Applications

Arrays of nanometer-scale field emitters have recently become attractive candidates for device applications where high frequency and high current are desirable attributes. High emission current can be obtained from densely packed Spindt-type emitter arrays with very low extraction voltage. Concern with the optimum geometrical shape of each emitter and the fraction of active emitters, makes a combined study of field emission and scanning electron microscopy especially useful.Several geometrical structures, as well as several materials, have been used to fabricate the field emitter arrays. The present study concentrates on silicon-base emitters fabricated at the Microelectronics Center of North Carolina (MCNC). Each emitter has a pyramidal structure, fabricated by anisotropic chemical etching of highly doped (ND = 1017 cm−3) n-type silicon. Figure 1 shows a SEM micrograph of a typical Si field emitter with a radius of curvature less than 30 nm. The field required for electron emission, about 3 × 107 V/cm, is created by a relatively low voltage applied to the extraction gate, a metal film less than one micron distant and deposited over a dielectric layer of silicon oxide (Figures 2 and 3).

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