Two-dimensional imaging of charge carrier profiles using local metal–semiconductor capacitance–voltage measurement

1998 ◽  
Vol 16 (1) ◽  
pp. 457 ◽  
Author(s):  
Y. Li
Keyword(s):  
Charge Carrier ◽  
Two Dimensional ◽  
Voltage Measurement ◽  
Capacitance Voltage

scholarly journals Cavity-enhanced optical Hall effect in two-dimensional free charge carrier gases detected at terahertz frequencies

2015 ◽  
Vol 40 (12) ◽  
pp. 2688 ◽  
Author(s):  
S. Knight ◽  
S. Schöche ◽  
V. Darakchieva ◽  
P. Kühne ◽  
J.-F. Carlin ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Hall Effect ◽  
Free Charge Carrier ◽  
Two Dimensional ◽  
Free Charge ◽  
Terahertz Frequencies ◽  
Carrier Gases ◽  
Optical Hall Effect

scholarly journals Efficient Interlayer Exciton Transport in Two-Dimensional Metal-Halide Perovskites.

2020 ◽  
Author(s):  
Alvaro J Magdaleno ◽  
Michael Seitz ◽  
Michel Frising ◽  
Ana Herranz de la Cruz ◽  
Antonio I. Fernández-Domínguez ◽  
...  
Keyword(s):  
Energy Transfer ◽  
Charge Carrier ◽  
Carrier Transport ◽  
Energy Transport ◽  
Diffusion Length ◽  
Charge Carrier Transport ◽  
Two Dimensional ◽  
Exciton Transport ◽  
Halide Perovskites ◽  
Excitonic Energy

We present transient microscopy measurements of interlayer energy transport in (PEA)<sub>2</sub>PbI<sub>4</sub> perovskite. We find efficient interlayer exciton transport (0.06 cm<sup>2</sup>/s), which translates into a diffusion length that exceeds 100 nm and a sub-ps timescale for energy transfer. While still slower than in-plane exciton transport (0.2 cm<sup>2</sup>/s), our results show that excitonic energy transport is considerably less anisotropic than charge-carrier transport for 2D perovskites.

scholarly journals Electrical Response of CdS Thin Film and CdS/Si Heterojunction to Gamma Radiation

2016 ◽  
Vol 2016 ◽  
pp. 1-7 ◽  
Author(s):  
M. R. Balboul ◽  
A. Abdel-Galil ◽  
I. S. Yahia ◽  
A. Sharaf
Keyword(s):  
Thin Film ◽  
Band Gap ◽  
Electrical Response ◽  
Charge Carrier Concentration ◽  
Flat Band ◽  
Voltage Measurement ◽  
Deep Traps ◽  
Cds Thin Film ◽  
Depth Analysis ◽  
Capacitance Voltage

Gamma irradiation method has been used to change the electrical properties of CdS thin film. A specific dose ofγ-irradiation increases the activation energy of CdS thin film. In addition,γ-irradiation was used to change the sign of Hall coefficient,RH, of CdS thin film from negative to positive irrespective of temperature. The Hall mobility mechanism shows noticeable change afterγ-irradiation from decreasing to increasing with raising the temperature. In depth, analysis was done using capacitance-voltage measurement in order to realize the modification in the CdS/Si junction band gap afterγ-irradiation. Several parameters were also studied such as charge carrier concentration,ND, and flat band potential,Vfb. Theγ-irradiation was found to increase the concentration of the deep traps within the band gap of the CdS/Si heterojunction.

scholarly journals Charge carrier scattering and ultrafast Auger dynamics in two-dimensional superatomic semiconductors

2020 ◽  
Vol 116 (20) ◽  
pp. 201109
Author(s):  
Heejae Kim ◽  
Kihong Lee ◽  
Avalon H. Dismukes ◽  
Bonnie Choi ◽  
Xavier Roy ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Two Dimensional ◽  
Carrier Scattering ◽  
Charge Carrier Scattering
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