Process design and emission properties of gated n[sup +] polycrystalline silicon field emitter arrays for flat-panel display applications

1997 ◽  
Vol 15 (2) ◽  
pp. 472 ◽  
Author(s):  
Hyung Soo Uh
Keyword(s):  
Process Design ◽  
Polycrystalline Silicon ◽  
Flat Panel Display ◽  
Flat Panel ◽  
Field Emitter ◽  
Emission Properties ◽  
Field Emitter Arrays

Gold Overcoatings on Spindt-Type Field Emitter Arrays

1996 ◽  
Vol 424 ◽  
Author(s):  
S. L. Skala ◽  
D. A. Ohlberg ◽  
A. A. Talin ◽  
T. E. Felter
Keyword(s):  
Electron Emission ◽  
Current Noise ◽  
Gold Deposition ◽  
Field Emitter ◽  
Emission Properties ◽  
Turn On ◽  
Field Emitter Arrays ◽  
Before And After ◽  
Emitter Array ◽  
Field Emitter Array

ABSTRACTThe electron emission properties of a Spindt-type field emitter array have been measured before and after deposition of approximately 100 Å of gold. The workfunction of the emitter decreased by 5% after gold deposition resulting in an 11% reduction in turn-on voltage. Emission stability as measured by RMS current noise improved by 40%. Improvements in emission do not withstand exposure to air. However, baking at moderate temperatures (200°C) restores the emission improvements obtained with the gold overcoating. Fowler-Nordheim plots show that the enhanced emission after baking is due to a increase of the Fowler-Nordheim intercept and not a decrease in slope. Additionally, the gold over coatings resist poisoning as a 50,000 L dose of oxygen only slightly affects emission.

A dual-gate field emitter and its integration into a flat panel display

1994 ◽  
Vol 4 (3) ◽  
pp. 106-109 ◽  
Author(s):  
H H Busta ◽  
J E Pogemiller ◽  
B J Zimmerman
Keyword(s):  
Flat Panel Display ◽  
Flat Panel ◽  
Field Emitter ◽  
Dual Gate

Chimney-Shaped and Plateau-Shaped Gate Electrode Field Emission Arrays

1998 ◽  
Vol 509 ◽  
Author(s):  
F. G. Tarntair ◽  
C. C. Wang ◽  
W. K. Hong ◽  
H. K. Huang ◽  
H. C. Cheng
Keyword(s):  
Thin Film Deposition ◽  
Film Deposition ◽  
Uniform Structure ◽  
Flat Panel Display ◽  
Gate Electrode ◽  
Large Area ◽  
Flat Panel ◽  
Field Emitter Arrays ◽  
The Matrix ◽  
Field Emission Arrays

AbstractA triode structure of chimney-shaped field emitter arrays is proposed in this article. This triode structure includes the chimney-shaped emitter, thermal oxidation dioxide, and the plateau-shaped singlecrystalline silicon gate electrode. For the application of the matrix-addressable and large area flat panel display, the uniform structure of the emitters and the yield become critical manufacturing issues when attempting to control nano-meter size features. The uniformity and yield of the chimney-shaped emitters are very well controlled. The nano-sized gate-to-emitter separations can be created by the changing thickness of the insulator. The uniformity of the insulator and emitter material can be controlled within 3% which can be obtained by most large area thin film deposition tools, not by photolithography.

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