Improved cold electron emission characteristics of electroluminescent porous silicon diodes

Author(s):  
Xia Sheng
1998 ◽  
Vol 509 ◽  
Author(s):  
X. Sheng ◽  
N. Koshida

AbstractBased on the previously-reported porosity multilayer technique, cold electron emission properties of porous silicon (PS) electroluminescent diodes with a structure of Au/PS/n-type Si are further improved by introducing a graded-band multilayer structure. It is shown that electrons are quasiballisticly emitted from PS diodes owing to a significantly reduced electron scattering in PS layer. As a result, the emission current shows a fluctuation-free behavior. These observations are very important for both understanding the electron transport in PS and developing high performance electron emitters in application to vacuum microelectronic technology.


1995 ◽  
Vol 34 (Part 2, No. 6A) ◽  
pp. L705-L707 ◽  
Author(s):  
Nobuyoshi Koshida ◽  
Tsuyoshi Ozaki ◽  
Xia Sheng ◽  
Hideki Koyama

AIP Advances ◽  
2019 ◽  
Vol 9 (9) ◽  
pp. 095303 ◽  
Author(s):  
Junjiang Guo ◽  
Dan Wang ◽  
Yantao Xu ◽  
Xiangping Zhu ◽  
Kaile Wen ◽  
...  

2021 ◽  
Vol 1851 (1) ◽  
pp. 012022
Author(s):  
I S Bizyaev ◽  
V S Osipov ◽  
V Ye Babyuk ◽  
A I Struchkov ◽  
N M Gnuchev

Sign in / Sign up

Export Citation Format

Share Document