Polysilicon gate etching in high density plasmas. V. Comparison between quantitative chemical analysis of photoresist and oxide masked polysilicon gates etched in HBr/Cl2/O2 plasmas
1997 ◽
Vol 15
(1)
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pp. 88
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Keyword(s):
2020 ◽
Vol 0
(3A)
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pp. 182-185