Method for the determination of the angular dependence during dry etching

1996 ◽  
Vol 14 (5) ◽  
pp. 3239 ◽  
Author(s):  
C. Hedlund
Keyword(s):  
Angular Dependence ◽  
Dry Etching

scholarly journals Characterization and Application of a Grazing Angle Objective for Quantitative Infrared Reflection Microspectroscopy

1995 ◽  
Vol 49 (3) ◽  
pp. 354-360 ◽  
Author(s):  
Stephen V. Pepper
Keyword(s):  
Angular Dependence ◽  
Grazing Angle ◽  
Fresnel Reflection ◽  
Angular Aperture ◽  
Incident Intensity ◽  
Specular Reflectance ◽  
Fresnel Reflection Coefficient ◽  
Infrared Reflection ◽  
Good Agreement

A grazing angle objective on an infrared microspectrometer is studied for quantitative spectroscopy by considering the angular dependence of the incident intensity within the objective's angular aperture. The assumption that there is no angular dependence is tested by comparing the experimental reflectance of Si and KBr surfaces with the reflectance calculated by integrating the Fresnel reflection coefficient over the angular aperture under this assumption. Good agreement was found, indicating that the specular reflectance of surfaces can straightforwardly be quantitatively integrated over the angular aperture without considering nonuniform incident intensity. This quantitative approach is applied to the thickness determination of dipcoated Krytox on gold. The infrared optical constants of both materials are known, allowing the integration to be carried out. The thickness obtained is in fair agreement with the value determined by ellipsometry in the visible. Therefore, this paper illustrates a method for more quantitative use of a grazing angle objective for infrared reflectance microspectroscopy.

A Chemical Perspective of GaN Polarity: The use of Hydrogen Plasma Dry Etching Versus NaOH Wet Etching to Determine Polarity

2002 ◽  
Vol 722 ◽  
Author(s):  
Maria Losurdo ◽  
MariaMichela Giangregorio ◽  
Pio Capezzuto ◽  
Giovanni Bruno ◽  
Gon Namkoong ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Plasma Etching ◽  
Hydrogen Plasma ◽  
Dry Etching ◽  
Surface Reactivity ◽  
Wet Etching ◽  
Hydrogen Treatment

AbstractThe use of dry hydrogen plasma etching is evaluated for determination of GaN polarity and critically compared to wet etching in NaOH. It is shown that hydrogen plasma etching is effective in revealing inversion domains (IDs) and some types of dislocations. This is because the surface morphology is unchanged by the hydrogen treatment, and, hence, the surface reactivity is not masked.

Determination of the photoelectron emission probability with inclined X-ray Laue diffraction

1986 ◽  
Vol 42 (1) ◽  
pp. 24-29 ◽  
Author(s):  
A. M. Afanas'ev ◽  
R. M. Imamov ◽  
E. Kh. Mukhamedzhanov ◽  
A. N. Chuzo
Keyword(s):  
Angular Dependence ◽  
Direct Method ◽  
Simple Relation ◽  
Photoelectron Emission ◽  
Laue Diffraction ◽  
X Ray ◽  
Different Depths ◽  
First Time ◽  
A Direct Method

A simple relation has been established between the Fourier component of the probability density P(z) of photoelectron emission from different depths of a crystal and the angular dependence of the emission of photoelectrons formed in inclined X-ray Laue diffraction, which for the first time permitted the use of a direct method for the reconstruction of the P(z) function. Accurate measurements of the angular dependence of photoelectron emission were carried out on a silicon single crystal with diffraction of Cu Kα radiation for different energy ranges. Photoelectrons were recorded by a proportional gas counter specially designed for the energy analysis of photoelectrons under inclined Laue diffraction conditions. The laws predicted by the theory have been fully confirmed, and the corresponding P(z) functions have been obtained.

Photothermal determination of the angular dependence of emissivity

2018 ◽  
Vol 57 (22) ◽  
pp. 6561 ◽  
Author(s):  
Yaqi Zhang ◽  
Gerald Diebold
Keyword(s):  
Angular Dependence

scholarly journals Examining Cfrp Laminate Layup with Contact-Mode Ultrasonic Measurements

1993 ◽  
Vol 2 (2) ◽  
pp. 096369359300200 ◽  
Author(s):  
D K Hsu ◽  
F J Margetan
Keyword(s):  
Angular Dependence ◽  
Shear Waves ◽  
Ultrasonic Signal ◽  
Thickness Direction ◽  
Contact Mode ◽  
Cfrp Laminate ◽  
Cfrp Laminates ◽  
Ultrasonic Measurements

This letter describes contact-mode ultrasonic measurements for evaluating the layup configuration of cross-plied CFRP laminates, particularly the [0m/90n] l layup. Polarization and velocity of shear waves propagating in the thickness direction were used in deducing the percentages of 0 and 90 degree plies. The angular dependence of an acousto-ultrasonic signal was used in the determination of in-plane fiber directions.

scholarly journals EP-1693 Determination of the angular dependence of a CC04 ion chamber

2019 ◽  
Vol 133 ◽  
pp. S910-S911
Author(s):  
A. Prado ◽  
Á. Gaitán ◽  
M. Manzano ◽  
M. Leonor
Keyword(s):  
Angular Dependence ◽  
Ion Chamber

Dry Etching Techniques and Chemistries for III-V Semiconductors

1990 ◽  
Vol 216 ◽  
Author(s):  
S. J. Pearton
Keyword(s):  
Plasma Etching ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Surface Damage ◽  
Dry Etching ◽  
Near Surface ◽  
Lattice Disorder ◽  
Ecr Plasma ◽  
Surface Morphologies

ABSTRACTDry etching of HI-V materials using both Cl-based (CCl2F2, SiCl4, BCl3, Cl2) and CH4/H2 discharges will be reviewed. The etch rates using chlorine-based mixtures are generally faster than those utilizing CH4/H2, but the latter gives smoother surface morphologies for In-containing compounds. The use of microwave (2.45 GHz) electron cyclotron resonance (ECR) discharges minimizes the depth of lattice disorder resulting from dry etching, relative to conventional RF (13.56 MHz) discharges. Recent results on the systematics of ECR plasma etching of both In- and Ga-based III-V semiconductors using CCl2F2/O2 and CH4/H2 mixtures will be discussed, including the determination of the maximum self-biases allowable which do not induce near-surface damage to the semiconductor. A further key issue is the prevention of changes in the surface stoichiometry of materials such as InP, where the lattice constituents may have considerably different volatilities in the particular discharge.

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