Three dimensional electron optical modeling of scanning tunneling microscope lithography in resists

1996 ◽  
Vol 14 (6) ◽  
pp. 4148 ◽  
Author(s):  
E. A. Dobisz
Keyword(s):  
Scanning Tunneling Microscope ◽  
Three Dimensional ◽  
Scanning Tunneling ◽  
Dimensional Electron ◽  
Tunneling Microscope ◽  
Optical Modeling

Formation of three-dimensional Si islands on Si(111) with a scanning tunneling microscope

1999 ◽  
Vol 74 (15) ◽  
pp. 2140-2142 ◽  
Author(s):  
Alexander A. Shklyaev ◽  
Motoshi Shibata ◽  
Masakazu Ichikawa
Keyword(s):  
Scanning Tunneling Microscope ◽  
Three Dimensional ◽  
Scanning Tunneling ◽  
Tunneling Microscope

Growth and Decay of Germanium Islands on Silicon Studied by High Temperature Stm

1999 ◽  
Vol 583 ◽  
Author(s):  
M. Kästner ◽  
B. Voigtländer
Keyword(s):  
High Temperature ◽  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Scanning Tunneling Microscope ◽  
Strain Energy ◽  
Molecular Beam ◽  
Three Dimensional ◽  
Scanning Tunneling ◽  
Two Dimensional ◽  
Tunneling Microscope

AbstractWe use a scanning tunneling microscope (STM) capable of imaging the growing layer at high temperature during molecular beam epitaxy (MBE) to study the epitaxial growth of Germanium on Silicon and the decay of Ge islands. The periodicity of the (2×N) reconstruction of two-dimensional Ge layers on Si(001) is measured as function of the Ge coverage. Strain energy drives the formation of the (2×N) reconstruction and Si/Ge intermixing. A comparison to total energy calculations predicting the periodicity of the (2×N) reconstruction is used to estimate the amount of Si-Ge intermixing near the surface. The evolution of the size and shape of individual “hut clusters” is measured and explained by kinetically self-limiting growth. The relaxation of kinetically a determined morphology towards equilibrium is followed for a Ge layer on Si(111). Strained two-dimensional as well as partially relaxed three-dimensional islands dissolve and are soaked up by larger three-dimensional islands which are dislocated and therefore fully relaxed.

Three-dimensional scattering and scanning tunneling microscope images

1992 ◽  
Vol 42-44 ◽  
pp. 250-255 ◽  
Author(s):  
J.P. Vigneron ◽  
I. Derycke ◽  
Ph. Lambin ◽  
Th. Laloyaux ◽  
A.A. Lucas ◽  
...  
Keyword(s):  
Scanning Tunneling Microscope ◽  
Three Dimensional ◽  
Scanning Tunneling ◽  
Tunneling Microscope ◽  
Microscope Images

Scanning probe microscopy: A new technology takes off

1990 ◽  
Vol 48 (3) ◽  
pp. 959-959
Author(s):  
Virgil Elings
Keyword(s):  
Scanning Probe Microscopy ◽  
Scanning Tunneling Microscope ◽  
New Technology ◽  
Near Field ◽  
Three Dimensional ◽  
Scanning Tunneling ◽  
Thin Sample ◽  
Tunneling Microscope ◽  
Atomic Force ◽  
Electron Microscopes

With the expanding use of the scanning tunneling microscope, the technology is developing into other scanning near field microscopes, microscopes whose resolution is determined by the size of the probe, not by some wavelength. The first available “son of STM” will be the atomic force microscope (AFM), a very low force profilometer which has atomic resolution and can profile non-conducting surfaces. The hope is that this microscope may find more applications in biology than the scanning tunneling microscope (STM), which requires a conducting or very thin sample.In the past five years, the STM has progressed from curiosity to everyday lab tool, imaging surfaces with scans from a few nanometers up to 100 microns. When compared to an SEM, the STM has the advantages of higher resolution, lower cost, operation in air or liquid, real three-dimensional output, and small size. The disadvantages are smaller scan size, slower scan speeds, fewer spectroscopic functions and, of course, not as many of the nice features of the more mature electron microscopes. The AFM has similar features to the STM except that the detector and profiling tips are more complicated and more difficult to operate—disadvantages that will decrease with time.

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