Low temperature chemically assisted ion-beam etching processes using Cl2, CH3I, and IBr3 to etch InP optoelectronic devices

1996 ◽  
Vol 14 (3) ◽  
pp. 1780 ◽  
Author(s):  
K. M. Eisele
Keyword(s):  
Low Temperature ◽  
Ion Beam ◽  
Optoelectronic Devices ◽  
Ion Beam Etching

scholarly journals Two-Dimensional Nanograting Fabrication by Multistep Nanoimprint Lithography and Ion Beam Etching

2021 ◽  
Vol 1 (1) ◽  
pp. 39-48
Author(s):  
Janek Buhl ◽  
Danbi Yoo ◽  
Markus Köpke ◽  
Martina Gerken
Keyword(s):  
Electron Beam ◽  
Indium Tin Oxide ◽  
Nanoimprint Lithography ◽  
Large Scale ◽  
Electrode Materials ◽  
Ion Beam ◽  
Optoelectronic Devices ◽  
Device Fabrication ◽  
Two Dimensional ◽  
Ion Beam Etching

The application of nanopatterned electrode materials is a promising method to improve the performance of thin-film optoelectronic devices such as organic light-emitting diodes (OLEDs) and organic photovoltaics. Light coupling to active layers is enhanced by employing nanopatterns specifically tailored to the device structure. A range of different nanopatterns is typically evaluated during the development process. Fabrication of each of these nanopatterns using electron-beam lithography is time- and cost-intensive, particularly for larger-scale devices, due to the serial nature of electron beam writing. Here, we present a method to generate nanopatterns of varying depth with different nanostructure designs from a single one-dimensional grating template structure with fixed grating depth. We employ multiple subsequent steps of UV nanoimprint lithography, curing, and ion beam etching to fabricate greyscale two-dimensional nanopatterns. In this work, we present variable greyscale nanopatterning of the widely used electrode material indium tin oxide. We demonstrate the fabrication of periodic pillar-like nanostructures with different period lengths and heights in the two grating directions. The patterned films can be used either for immediate device fabrication or pattern reproduction by conventional nanoimprint lithography. Pattern reproduction is particularly interesting for the large-scale, cost-efficient fabrication of flexible optoelectronic devices.

Ultrastructural Features of Normal and Diseased Hair Revealed by Ion Beam Etching and Freeze Fracture

1975 ◽  
Vol 33 ◽  
pp. 358-359
Author(s):  
M. Spector ◽  
A. C. Brown
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Ectodermal Dysplasia ◽  
Ion Beam ◽  
Freeze Fracture ◽  
Ion Current ◽  
Ion Beam Etching ◽  
Pili Torti ◽  
Argon Ion ◽  
Scanning Electron

Ion beam etching and freeze fracture techniques were utilized in conjunction with scanning electron microscopy to study the ultrastructure of normal and diseased human hair. Topographical differences in the cuticular scale of normal and diseased hair were demonstrated in previous scanning electron microscope studies. In the present study, ion beam etching and freeze fracture techniques were utilized to reveal subsurface ultrastructural features of the cuticle and cortex.Samples of normal and diseased hair including monilethrix, pili torti, pili annulati, and hidrotic ectodermal dysplasia were cut from areas near the base of the hair. In preparation for ion beam etching, untreated hairs were mounted on conducting tape on a conducting silicon substrate. The hairs were ion beam etched by an 18 ky argon ion beam (5μA ion current) from an ETEC ion beam etching device. The ion beam was oriented perpendicular to the substrate. The specimen remained stationary in the beam for exposures of 6 to 8 minutes.

Chemical Precursors for GaAs Etching with low Energy ion Beams: Chlorine adsorption on GaAs(100)

1991 ◽  
Vol 223 ◽  
Author(s):  
Richard B. Jackman ◽  
Glenn C. Tyrrell ◽  
Duncan Marshall ◽  
Catherine L. French ◽  
John S. Foord
Keyword(s):  
Ion Beam ◽  
Ion Beams ◽  
Low Energy ◽  
Ion Beam Etching ◽  
Chlorine Adsorption

ABSTRACTThis paper addresses the issue of chlorine adsorption on GaAs(100) with respect to the mechanisms of thermal and ion-enhanced etching. The use of halogenated precursors eg. dichloroethane is also discussed in regard to chemically assisted ion beam etching (CAIBE).

TEM Sample Preparation by Single-Sided Low-Energy Ion Beam Etching

2011 ◽  
Author(s):  
Liew Kaeng Nan ◽  
Lee Meng Lung
Keyword(s):  
Sample Preparation ◽  
Semiconductor Device ◽  
Ion Beam ◽  
Critical Dimension ◽  
Low Energy ◽  
Ex Situ ◽  
Good Image Quality ◽  
Ion Beam Etching ◽  
Device Structures ◽  
Common Technique

Abstract Conventional FIB ex-situ lift-out is the most common technique for TEM sample preparation. However, the scaling of semiconductor device structures poses great challenge to the method since the critical dimension of device becomes smaller than normal TEM sample thickness. In this paper, a technique combining 30 keV FIB milling and 3 keV ion beam etching is introduced to prepare the TEM specimen. It can be used by existing FIBs that are not equipped with low-energy ion beam. By this method, the overlapping pattern can be eliminated while maintaining good image quality.

Role of Surface Reconstruction and External Ion Beam in the Growth Kinetics of III-V Molecular Beam Epitaxy

1987 ◽  
Vol 94 ◽  
Author(s):  
S. B. Ogale ◽  
M. Thomsen ◽  
A. Madhukar
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Surface Reconstruction ◽  
Molecular Beam ◽  
Ion Beam ◽  
Growth Front ◽  
Kinetic Rates ◽  
Kinetics Of ◽  
Low Temperature Epitaxy

ABSTRACTComputer simulations of III-V molecular beam epitaxy (MBE) show that surface reconstruction induced modulation of kinetic rates could give rise to ordering in alloys. Results are also presented for the possible influence of an external ion beam in achieving low temperature epitaxy as well as smoother growth front under usual conditions.

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