Stain-etched porous silicon visible light emitting diodes

Author(s):  
J. Xu
1992 ◽  
Vol 283 ◽  
Author(s):  
Peter Steiner ◽  
Frank Kozlowski ◽  
Hermann Sandmaier ◽  
Walter Lang

ABSTRACTFirst results on light emitting diodes in porous silicon were reported in 1991. They showed a quantum efficiency of 10-7 to 10-5 and an orange spectrum. Over the last year some progress was achieved:- By applying UV-light during the etching blue and green light emitting diodes in porous silicon are fabricated.- When a p/n junction is realized within the porous region, a quantum efficiency of 10-4 is obtained.


2016 ◽  
Vol 10 (3) ◽  
pp. 94-99 ◽  
Author(s):  
Dehao Wu ◽  
Chen Chen ◽  
Zabih Ghassemlooy ◽  
Wen-De Zhong

2001 ◽  
Vol 17 (1-2) ◽  
pp. 111-116 ◽  
Author(s):  
K. Molnár ◽  
T. Mohácsy ◽  
M. Ádám ◽  
I. Bársony

1993 ◽  
Vol 298 ◽  
Author(s):  
P. Steiner ◽  
W. Lang ◽  
F. Kozlowski ◽  
H. Sandmaier

AbstractThe processing of light emitting diodes in porous silicon with green/blue electroluminescence spectrum is described. The spectral behavicur and the degradation are investigated. A phenomenological theory for the luminescence is given.


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