Fabrication of silicon quantum wires by anisotropic wet chemical etching and thermal oxidation

Author(s):  
J. L. Liu
1996 ◽  
Vol 63 (4) ◽  
pp. 371-375 ◽  
Author(s):  
J. L. Liu ◽  
Y. Shi ◽  
F. Wang ◽  
Y. Lu ◽  
R. Zhang ◽  
...  

1992 ◽  
Vol 31 (Part 1, No. 12B) ◽  
pp. 4515-4519 ◽  
Author(s):  
Kanji Yoh ◽  
Kazumasa Kiyomi ◽  
Akira Nishida ◽  
Masataka Inoue

1996 ◽  
Vol 63 (4) ◽  
pp. 371-375 ◽  
Author(s):  
J. L. Liu ◽  
Y. Shi ◽  
F. Wang ◽  
Y. Lu ◽  
R. Zhang ◽  
...  

1993 ◽  
Vol 325 ◽  
Author(s):  
H. W. Yang ◽  
S. F. Horng ◽  
H. L. Hwang

AbstractQuantum Wires Structures Were Fabricated By Patterning Quantum Well Samples With Electron Beam Lithography And Various Wet Chemical Etching Procedures. Wire Structures With 800Å Wire Width Were Achieved By Wet Etching In Nh4Oh / H2O2 / H2O (20:7:973). These Samples Were Characterized By Scanning Electron Microscopy (Sem), Photoluminescence (Pl), And Polarization-Dependent Photoluminescence Excitation (Ple) Measurements. The Pl Spectra Show Significantly Strongpr Peaks Than That Taken From An En-Etched Quantum Well Sample. A Wire Width Of 400Å Was Estimated From The Blue Shift Of Pl Peaks. A 22% Anisotropy Was Observed From Polarization-Dependent Ple Spectra, Further Corroborating The Existence Of Two-Dimensional Quantum Confinement.


Author(s):  
Dongmei Meng ◽  
Joe Rupley ◽  
Chris McMahon

Abstract This paper presents decapsulation solutions for devices bonded with Cu wire. By removing mold compound to a thin layer using a laser ablation tool, Cu wire bonded packages are decapsulated using wet chemical etching by controlling the etch time and temperature. Further, the paper investigates the possibilities of decapsulating Cu wire bonded devices using full wet chemical etches without the facilitation of laser ablation removing much of mold compound. Additional discussion on reliability concerns when evaluating Cu wirebond devices is addressed here. The lack of understanding of the reliability of Cu wire bonded packages creates a challenge to the FA engineer as they must develop techniques to help understanding the reliability issue associated with Cu wire bonding devices. More research and analysis are ongoing to develop appropriate analysis methods and techniques to support the Cu wire bonding device technology in the lab.


Small ◽  
2020 ◽  
Vol 16 (51) ◽  
pp. 2007045
Author(s):  
Mei Sun ◽  
Bocheng Yu ◽  
Mengyu Hong ◽  
Zhiwei Li ◽  
Fengjiao Lyu ◽  
...  

Author(s):  
Albert Grau-Carbonell ◽  
Sina Sadighikia ◽  
Tom A. J. Welling ◽  
Relinde J. A. van Dijk-Moes ◽  
Ramakrishna Kotni ◽  
...  

2015 ◽  
Vol 48 (36) ◽  
pp. 365303 ◽  
Author(s):  
Jingchang Sun ◽  
Ting Zhao ◽  
Zhangwei Ma ◽  
Ming Li ◽  
Cheng Chang ◽  
...  

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