Thermal stability of AlGaAs/GaAs single quantum well structures using photoreflectance

Author(s):  
P. J. Hughes
1994 ◽  
Vol 354 ◽  
Author(s):  
P J Hughes ◽  
E H Li ◽  
B L Weiss ◽  
H E Jackson ◽  
J S Roberts

AbstractThe effects of interdiffusion on the band structure of two MxGaUxAs/GaAs single quantum well (SQW) structures were studied using room temperature photoreflectance. Rapid thermal annealing of the SQW structures at temperatures of 800°C, 900°C and 1000°C for times up to 180 seconds resulted in limited interdiffusion. Low dose (1014 cm”2) oxygen implantation reduced the thermal stability of these structures where the extent of the interdiffusion was found to be greater for the implanted samples for identical annealing conditions.


2003 ◽  
Vol 426 (1-2) ◽  
pp. 186-190 ◽  
Author(s):  
Feng Zhao ◽  
I.W. Choi ◽  
Shu Yuan ◽  
C.Y. Liu ◽  
J. Jiang ◽  
...  

2015 ◽  
Vol 30 (9) ◽  
pp. 094016 ◽  
Author(s):  
O Donmez ◽  
A Erol ◽  
M C Arikan ◽  
H Makhloufi ◽  
A Arnoult ◽  
...  

1993 ◽  
Vol 300 ◽  
Author(s):  
S. Subramanian ◽  
B. M. Arora ◽  
A. K. Srivastava ◽  
S. Banerjee ◽  
G. Fernandes

ABSTRACTIn this paper we report a modified Kroemer's analysis for the determination of the band offset (ΔEc) of single quantum well (SQW) structures from simple C-V measurements. The experimental carrier profile from an MOVPE grown pseudomorphic GaAs/InGaAs/GaAs strained SQW structure shows a sharp accumulation peak bounded by depletion regions on either side. The full width at half maximum of the accumulation peak is comparable to the width of the quantum well. The value of ΔEC obtained from C-V measurement is in good agreement with the values determined by simulation and photoluminescence measurements. DLTS measurements on our SQW samples do not show any peaks which is contrary to the published reports. We believe that it is necessary to carefully isolate the role of interface states, before assigning a DLTS peak to emission from the quantum well.


1992 ◽  
Vol 60 (3) ◽  
pp. 365-367 ◽  
Author(s):  
H. Kawanishi ◽  
Y. Sugimoto ◽  
T. Ishikawa ◽  
H. Hidaka

1993 ◽  
Vol 8 (1S) ◽  
pp. S296-S299 ◽  
Author(s):  
R Sizmann ◽  
P Helgesen ◽  
H Steen ◽  
T Skauli ◽  
T Colin ◽  
...  

1996 ◽  
Vol 11 (8) ◽  
pp. 1185-1188 ◽  
Author(s):  
A N Baranov ◽  
Y Cuminal ◽  
G Boissier ◽  
J C Nicolas ◽  
J L Lazzari ◽  
...  

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