Postgrowth of a Si contact layer on an air-exposed Si1−xGex/Si single quantum well grown by gas-source molecular beam epitaxy, for use in an electroluminescent device

Y. Kato

doi:10.1116/1.588002

Postgrowth of a Si contact layer on an air-exposed Si1−xGex/Si single quantum well grown by gas-source molecular beam epitaxy, for use in an electroluminescent device

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.588002 ◽

1995 ◽

Vol 13 (1) ◽

pp. 111 ◽

Cited By ~ 8

Author(s):

Y. Kato

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Contact Layer ◽

Single Quantum ◽

Single Quantum Well ◽

Electroluminescent Device ◽

Gas Source

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Solid- and gas-source “hybrid” Si molecular beam epitaxy for a Si1−xGex/Si single quantum well electroluminescent device

Journal of Electronic Materials ◽

10.1007/bf02651266 ◽

1994 ◽

Vol 23 (1) ◽

pp. 47-51 ◽

Cited By ~ 1

Author(s):

Y. Kato ◽

S. Fukatsu ◽

Y. Shiraki

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Single Quantum ◽

Single Quantum Well ◽

Electroluminescent Device ◽

Gas Source

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Growth and postgrowth rapid thermal annealing of InAsN/InGaAs single quantum well on InP grown by gas source molecular beam epitaxy

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.590860 ◽

1999 ◽

Vol 17 (5) ◽

pp. 1997 ◽

Cited By ~ 20

Author(s):

Jyh-Shyang Wang ◽

Hao-Hsiung Lin

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Molecular Beam ◽

Single Quantum ◽

Single Quantum Well ◽

Gas Source

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Quantum Size Effect of Excitonic Band-Edge Luminescence in Strained Si1-xGex/Si Single Quantum Well Structures Grown by Gas-Source Si Molecular Beam Epitaxy

Japanese Journal of Applied Physics ◽

10.1143/jjap.31.l1319 ◽

1992 ◽

Vol 31 (Part 2, No. 9B) ◽

pp. L1319-L1321 ◽

Cited By ~ 26

Author(s):

Susumu Fukatsu ◽

Hironobu Yoshida ◽

Noritaka Usami ◽

Akira Fujiwara ◽

Yutaka Takahashi ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Size Effect ◽

Molecular Beam ◽

Single Quantum ◽

Single Quantum Well ◽

Quantum Well Structures ◽

Gas Source ◽

Quantum Size ◽

Band Edge Luminescence

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A Si1−xGex/Si single quantum well p-i-n structure grown by solid-source and gas source “hybrid” Si molecular beam epitaxy

Journal of Crystal Growth ◽

10.1016/0022-0248(94)90439-1 ◽

1994 ◽

Vol 136 (1-4) ◽

pp. 355-360 ◽

Cited By ~ 1

Author(s):

Y. Kato ◽

S. Fukatsu ◽

N. Usami ◽

Y. Shiraki

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Single Quantum ◽

Single Quantum Well ◽

Gas Source

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Strained single quantum well (SSQW) GaInP/AlInP visible lasers fabricated by novel shutter control method in gas source molecular beam epitaxy

Electronics Letters ◽

10.1049/el:19920538 ◽

1992 ◽

Vol 28 (9) ◽

pp. 851 ◽

Cited By ~ 6

Author(s):

I. Nomura ◽

K. Kishino ◽

Y. Kaneko

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Control Method ◽

Single Quantum ◽

Single Quantum Well ◽

Gas Source ◽

Visible Lasers

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Visible AlGaAs single quantum well lasers with low threshold current density grown by molecular beam epitaxy

Electronics Letters ◽

10.1049/el:19880364 ◽

1988 ◽

Vol 24 (9) ◽

pp. 537

Author(s):

B. Saint-Cricq ◽

F. Chatenoud ◽

F. Lozes-Dupuy ◽

S. Fourtine ◽

H. Martinot

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Current Density ◽

Molecular Beam ◽

Threshold Current ◽

Threshold Current Density ◽

Quantum Well Lasers ◽

Single Quantum ◽

Single Quantum Well ◽

Low Threshold

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Low-threshold 1.3-/spl mu/m InGaAsN:Sb-GaAs single-quantum-well lasers grown by molecular beam epitaxy

IEEE Photonics Technology Letters ◽

10.1109/68.823492 ◽

2000 ◽

Vol 12 (2) ◽

pp. 128-130 ◽

Cited By ~ 7

Author(s):

X. Yang ◽

J.B. Heroux ◽

M.J. Jurkovic ◽

W.I. Wang

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Quantum Well Lasers ◽

Single Quantum ◽

Single Quantum Well ◽

Low Threshold

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Surface photo-voltage characterization of GaAs/AlGaAs single quantum well laser structures grown by molecular beam epitaxy

Semiconductor Science and Technology ◽

10.1088/0268-1242/29/3/035002 ◽

2014 ◽

Vol 29 (3) ◽

pp. 035002 ◽

Cited By ~ 1

Author(s):

R Muralidharan ◽

V Ramesh ◽

Puspashree Mishra ◽

T Srinivasan

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Single Quantum ◽

Single Quantum Well ◽

Quantum Well Laser

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Al0.3Ga0.7As/GaAs single quantum well structures grown by molecular beam epitaxy on misoriented substrates

Applied Physics Letters ◽

10.1063/1.96665 ◽

1986 ◽

Vol 48 (14) ◽

pp. 940-942 ◽

Cited By ~ 31

Author(s):

R. K. Tsui ◽

G. D. Kramer ◽

J. A. Curless ◽

M. S. Peffley

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Single Quantum ◽

Single Quantum Well ◽

Quantum Well Structures

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Room-temperature luminescence from Si/Ge single quantum well diodes grown by molecular beam epitaxy

Selected Topics in Group IV and II–VI Semiconductors ◽

10.1016/b978-0-444-82411-0.50012-7 ◽

1996 ◽

pp. 15-20

Author(s):

H. Presting ◽

T. Zinke ◽

O. Brux ◽

M. Gail ◽

G. Abstreiter ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Room Temperature ◽

Molecular Beam ◽

Single Quantum ◽

Single Quantum Well ◽

Room Temperature Luminescence

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