Single-crystal epitaxial Ge-based ohmic contact structure for III–V nanoelectronic and mesoscopic devices

1995 ◽  
Vol 13 (3) ◽  
pp. 1358
Author(s):  
M. Dubey
Keyword(s):  
Single Crystal ◽  
Ohmic Contact ◽  
Contact Structure ◽  
Mesoscopic Devices

Palladium Ohmic contact on hydrogen-terminated single crystal diamond film

2015 ◽  
Vol 59 ◽  
pp. 90-94 ◽  
Author(s):  
W. Wang ◽  
C. Hu ◽  
F.N. Li ◽  
S.Y. Li ◽  
Z.C. Liu ◽  
...  
Keyword(s):  
Single Crystal ◽  
Diamond Film ◽  
Ohmic Contact ◽  
Single Crystal Diamond

scholarly journals Interface engineering strategies towards Cs2AgBiBr6 single-crystalline photodetectors with good Ohmic contact behaviours

2020 ◽  
Vol 8 (1) ◽  
pp. 276-284 ◽  
Author(s):  
Yangyang Dang ◽  
Guoqing Tong ◽  
Wentao Song ◽  
Zonghao Liu ◽  
Longbin Qiu ◽  
...  
Keyword(s):  
Single Crystal ◽  
Ohmic Contact ◽  
Interface Engineering ◽  
Single Crystalline ◽  
Ag Electrodes ◽  
Room Condition ◽  
Photo Response

Cs2AgBiBr6 single crystal photodetectors using Ag electrodes under different wavelength at room condition showed the excellent photo-response with Ohmic-contact among the different electrodes (Au, Ag and Al).

scholarly journals Annealing Temperature on Contact Properties between Nickel Film and Hydrogen-Terminated Single Crystal Diamond

Coatings ◽  
2020 ◽  
Vol 10 (9) ◽  
pp. 876
Author(s):  
Pengfei Zhang ◽  
Shaopeng Zhang ◽  
Weidong Chen ◽  
Shufang Yan ◽  
Wen Ma ◽  
...  
Keyword(s):  
Single Crystal ◽  
Ohmic Contact ◽  
Annealing Temperature ◽  
Hydrogen Atmosphere ◽  
Nickel Film ◽  
Diamond Surface ◽  
Transmission Line Model ◽  
Single Crystal Diamond ◽  
Specific Contact ◽  
Increasing Temperature

Ohmic contact of nickel on hydrogen-terminated single-crystal diamond film was investigated with an annealing temperature ranging from room temperature to 750 °C in hydrogen atmosphere. Nickel film was deposited on a hydrogen-terminated single-crystal diamond surface with gold film in order to protect it from oxidation. Contact properties between nickel and hydrogen-terminated single crystal diamond were measured by a circular transmission line model. The lowest specific contact resistivity was 7.82 × 10−5 Ω cm2 at annealing temperature of 750 °C, indicating good ohmic contact, which reveals improved thermal stability by increasing temperature.

scholarly journals Ohmic contact between iridium film and hydrogen-terminated single crystal diamond

2017 ◽  
Vol 7 (1) ◽  
Author(s):  
Yan-Feng Wang ◽  
Xiaohui Chang ◽  
Shuoye Li ◽  
Dan Zhao ◽  
Guoqing Shao ◽  
...  
Keyword(s):  
Single Crystal ◽  
Ohmic Contact ◽  
Single Crystal Diamond

Influence of the Ohmic Contact Structure on the Performance of GaAs/AlGaAs Photovoltaic Converters

2018 ◽  
Vol 63 (8) ◽  
pp. 1177-1181 ◽  
Author(s):  
A. V. Malevskaya ◽  
V. S. Kalinovskii ◽  
N. D. Il’inskaya ◽  
D. A. Malevskii ◽  
E. V. Kontrosh ◽  
...  
Keyword(s):  
Ohmic Contact ◽  
Contact Structure

On a GaN-Based Light-Emitting Diode With an Indium–Tin–Oxide (ITO) Direct-Ohmic Contact Structure

2011 ◽  
Vol 23 (15) ◽  
pp. 1037-1039 ◽  
Author(s):  
Yi-Jung Liu ◽  
Chien-Chang Huang ◽  
Tai-You Chen ◽  
Chi-Shiang Hsu ◽  
Tsung-Yuan Tsai ◽  
...  
Keyword(s):  
Tin Oxide ◽  
Ohmic Contact ◽  
Indium Tin Oxide ◽  
Contact Structure ◽  
Light Emitting Diode ◽  
Light Emitting

scholarly journals Implementation of an indium-tin-oxide (ITO) direct-Ohmic contact structure on a GaN-based light emitting diode

2011 ◽  
Vol 19 (15) ◽  
pp. 14662 ◽  
Author(s):  
Yi-Jung Liu ◽  
Chien-Chang Huang ◽  
Tai-You Chen ◽  
Chi-Shiang Hsu ◽  
Jian-Kai Liou ◽  
...  
Keyword(s):  
Tin Oxide ◽  
Ohmic Contact ◽  
Indium Tin Oxide ◽  
Contact Structure ◽  
Light Emitting Diode ◽  
Light Emitting

scholarly journals Bendable Single Crystal Silicon Nanomembrane Thin Film Transistors with Improved Low-Temperature Processed Metal/n-Si Ohmic Contact by Inserting TiO2 Interlayer

Nanomaterials ◽  
2018 ◽  
Vol 8 (12) ◽  
pp. 1060 ◽  
Author(s):  
Jiaqi Zhang ◽  
Yi Zhang ◽  
Dazheng Chen ◽  
Weidong Zhu ◽  
He Xi ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Single Crystal ◽  
Ohmic Contact ◽  
Thin Film Transistors ◽  
Single Crystal Silicon ◽  
Bending Test ◽  
Crystal Silicon ◽  
Silicon Nanomembrane ◽  
Tio2 Interlayer

Bendable single crystal silicon nanomembrane thin film transistors (SiNMs TFTs), employing a simple method which can improve the metal/n-Silicon (Si) contact characteristics by inserting the titanium dioxide (TiO2) interlayer deposited by atomic layer deposition (ALD) at a low temperature (90 °C), are fabricated on ITO/PET flexible substrates. Current-voltage characteristics of titanium (Ti)/insertion layer (IL)/n-Si structures demonstrates that they are typically ohmic contacts. X-ray photoelectron spectroscopy (XPS) results determines that TiO2 is oxygen-vacancies rich, which may dope TiO2 and contribute to a lower resistance. By inserting TiO2 between Ti and n-Si, Ids of bendable single crystal SiNMs TFTs increases 3–10 times than those without the TiO2 insertion layer. The fabricated bendable devices show superior flexible properties. The TFTs, whose electrical properties keeps almost unchanged in 800 cycles bending with a bending radius of 0.75 cm, obtains the durability in bending test. All of the results confirm that it is a promising method to insert the TiO2 interlayer for improving the Metal/n-Si ohmic contact in fabrication of bendable single crystal SiNMs TFTs.

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