Fabrication of ultrafine anisotropic SiO2 mask by the combination of electron beam lithography and SF6 reactive ion beam etching using aluminum lift-off technique

1994 ◽  
Vol 12 (4) ◽  
pp. 2356 ◽  
Author(s):  
Tohru Nishibe
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Ion Beam ◽  
Ion Beam Etching ◽  
Lift Off ◽  
Sio2 Mask ◽  
Reactive Ion Beam Etching

C60Resist Mask of Electron Beam Lithography for Chlorine-Based Reactive Ion Beam Etching

1998 ◽  
Vol 37 (Part 1, No. 7A) ◽  
pp. 4211-4212 ◽  
Author(s):  
Akihiro Matsutani ◽  
Fumio Koyama ◽  
Kenichi Iga
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Ion Beam ◽  
Ion Beam Etching ◽  
Reactive Ion Beam Etching

scholarly journals Nanopatterning of Weak Links in Superconducting Oxide Interfaces

Nanomaterials ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 398
Author(s):  
Gyanendra Singh ◽  
Edouard Lesne ◽  
Dag Winkler ◽  
Tord Claeson ◽  
Thilo Bauch ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Ion Beam ◽  
Orbit Coupling ◽  
Weak Links ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Two Dimensional ◽  
Oxide Interfaces ◽  
Lift Off

The interface between two wide band-gap insulators, LaAlO3 and SrTiO3 (LAO/STO), hosts a quasi-two-dimensional electron gas (q2DEG), two-dimensional superconductivity, ferromagnetism, and giant Rashba spin-orbit coupling. The co-existence of two-dimensional superconductivity with gate-tunable spin-orbit coupling and multiband occupation is of particular interest for the realization of unconventional superconducting pairing. To investigate the symmetry of the superconducting order parameter, phase sensitive measurements of the Josephson effect are required. We describe an approach for the fabrication of artificial superconducting weak links at the LAO/STO interface using direct high-resolution electron beam lithography and low-energy argon ion beam irradiation. The method does not require lift-off steps or sacrificial layers. Therefore, resolution is only limited by the electron beam lithography and pattern transfer. We have realized superconducting weak links with a barrier thickness of 30–100 nm. The barrier transparency of the weak links can be controlled by the irradiation dose and further tuned by a gate voltage. Our results open up new possibilities for the realization of quantum devices in oxide interfaces.

Laterally-Coupled Distributed Feedback laser fabricated with electron beam lithography and chemically assisted ion beam etching

1995 ◽  
Vol 27 (1-4) ◽  
pp. 67-70 ◽  
Author(s):  
R.C. Tiberio ◽  
P.F. Chapman ◽  
J.P. Drumheller ◽  
R.D. Martin ◽  
S. Forouhar ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Ion Beam ◽  
Distributed Feedback ◽  
Distributed Feedback Laser ◽  
Ion Beam Etching
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