Review of secondary ion mass spectrometry characterization of contamination associated with ion implantation

1994 ◽  
Vol 12 (4) ◽  
pp. 2263 ◽  
Author(s):  
F. A. Stevie
Keyword(s):  
Mass Spectrometry ◽  
Ion Implantation ◽  
Secondary Ion Mass Spectrometry ◽  
Ion Mass Spectrometry ◽  
Secondary Ion

Ion Implantation and Characterization of III-V Materials

1988 ◽  
Vol 144 ◽  
Author(s):  
R. G. Wilson ◽  
D. B. Rensch
Keyword(s):  
Mass Spectrometry ◽  
Ion Implantation ◽  
Secondary Ion Mass Spectrometry ◽  
Electrical Device ◽  
Ion Mass Spectrometry ◽  
Secondary Ion ◽  
Depth Distributions

ABSTRACTWe have implanted most dopant elements into GaAs, GaP, InP, and InSb, to energies from 10 to 700 keV, and a few up to 2.4 MeV, in random and channeled orientation, annealed some of these implants, and measured the depth distributions using secondary ion mass spectrometry (SIMS) . We have calculated values of Rm, Rp, ΔRp, γ1, β2, using an LSS formulation, and measured these same profile parameters for the experimental profiles using a Pearson IV computer fitting routine. We describe a study of the fabrication of self-aligned W-gate FETs in GaAs using Si-implanted channels and source/drains, and a buried p implant (Be or Mg) to compensate the backside (tail) of the Si profile. The implant profiles and electrical device characteristics, including the effects on AVt of various implant conditions, are discussed.

Characterization of the superlattice region of a quantum cascade laser by secondary ion mass spectrometry

Nanoscale ◽  
2017 ◽  
Vol 9 (44) ◽  
pp. 17571-17575 ◽  
Author(s):  
Paweł Piotr Michałowski ◽  
Piotr Gutowski ◽  
Dorota Pierścińska ◽  
Kamil Pierściński ◽  
Maciej Bugajski ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Quantum Cascade Laser ◽  
Secondary Ion Mass Spectrometry ◽  
Quantum Cascade ◽  
Oxygen Contamination ◽  
Ion Mass Spectrometry ◽  
Secondary Ion

Non-uniform oxygen contamination in the superlattice region of a quantum cascade laser measured by secondary ion mass spectrometry.

Imaging and 3D Elemental Characterization of Intact Bacterial Spores by High-Resolution Secondary Ion Mass Spectrometry

2008 ◽  
Vol 80 (15) ◽  
pp. 5986-5992 ◽  
Author(s):  
Sutapa Ghosal ◽  
Stewart J. Fallon ◽  
Terrance J. Leighton ◽  
Katherine E. Wheeler ◽  
Michael J. Kristo ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
High Resolution ◽  
Secondary Ion Mass Spectrometry ◽  
Bacterial Spores ◽  
Ion Mass Spectrometry ◽  
Secondary Ion ◽  
Elemental Characterization

scholarly journals Measurements of the Diffusion of Iron and Carbon in Single Crystal NiAl using Ion Implantation and Secondary Ion Mass Spectrometry

1998 ◽  
Vol 527 ◽  
Author(s):  
R. J. Hanrahan ◽  
S. P. Withrow ◽  
M. Puga-Lambers
Keyword(s):  
Mass Spectrometry ◽  
Ion Implantation ◽  
Single Crystal ◽  
Secondary Ion Mass Spectrometry ◽  
Tracer Diffusion ◽  
Dynamic Strain ◽  
Enhanced Diffusion ◽  
Ion Mass Spectrometry ◽  
Impurity Elements ◽  
Secondary Ion

ABSTRACTClassical diffusion measurements in intermetallic compounds are often complicated by low diffusivities or low solubilities of the elements of interest. Using secondary ion mass spectrometry for measurements over a relatively shallow spatial range may be used to solve the problem of low diffusivity. In order to simultaneously obtain measurements on important impurity elements with low solubilities we have used ion implantation to supersaturate a narrow layer near the surface. Single crystal NiAl was implanted with either 12C or both 56Fe and 12C in order to investigate the measurement of substitutional (Fe) versus interstitial (C) tracer diffusion and the cross effect of both substitutional and interstitial diffusion. When C alone was implanted negligible diffusion was observed over the range of times and temperatures investigated. When both Fe and C were implanted together significantly enhanced diffusion of the C was observed, which is apparently associated with the movement of Fe. This supports one theory of dynamic strain aging in Fe alloyed NiAl.

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