Linewidth uniformity versus etch rate uniformity in refractory metal plasma etching

1994 ◽  
Vol 12 (5) ◽  
pp. 2963 ◽  
Author(s):  
Sami Franssila
Keyword(s):  
Plasma Etching ◽  
Refractory Metal ◽  
Etch Rate ◽  
Metal Plasma

Etch Rate and Surface Morphology of Plasma Etched Glass Substrates

2000 ◽  
Vol 657 ◽  
Author(s):  
Junting Liu ◽  
Nikolay I. Nemchuk ◽  
Dieter G. Ast ◽  
J. Gregory Couillard
Keyword(s):  
Plasma Etching ◽  
Glass Ceramic ◽  
Etch Rate ◽  
Glass Ceramics ◽  
Similar Rate ◽  
Optical Mems ◽  
Glass Substrates ◽  
Rate Limiting Step ◽  
Green Glass ◽  
Etched Surface

ABSTRACTMicro-machined transparent components are of interest for optical MEMS and miniaturized biological systems. The glass ceramic GC6 developed by Corning is optically transparent, has a softening point in excess of 900°C, and a thermal expansion coefficient matched to silicon. These properties make it useful for the construction of devices that combine thin film silicon electronics with MEMS systems.Both the ceramic precursor (green glass) and the glass ceramic etch at a similar rate, about 1/3 to 1/4 of that of SiO2 etched under the same conditions, indicating that chemistry rather than microstructure control the etch rate. The cleaning steps used to clean the glass precursor profoundly influence the degree of surface roughness that develops during subsequent plasma etching. In glass ceramics, the morphology of plasma etched surface is always very smooth and independent of the cleaning steps used. Assuming that the removal of spinel crystals is the rate limiting step in plasma etching glass ceramics can explain this observation.

Impact of carrier wafer on etch rate, selectivity, morphology, and passivation during GaN plasma etching

2021 ◽  
Vol 39 (5) ◽  
pp. 053002
Author(s):  
Clint D. Frye ◽  
Scott B. Donald ◽  
Catherine Reinhardt ◽  
Lars F. Voss ◽  
Sara E. Harrison
Keyword(s):  
Plasma Etching ◽  
Etch Rate ◽  
Carrier Wafer

The Influence of HBr Discharge Ambience on Poly-Si/SiO2 Etching Selectivity

1991 ◽  
Vol 223 ◽  
Author(s):  
E. Ikawa ◽  
K. Tokashiki ◽  
T. Kikkawa ◽  
Y. Teraoka ◽  
I. Nishiyama
Keyword(s):  
Plasma Etching ◽  
Parallel Plate ◽  
Etch Rate ◽  
Etching Rate ◽  
Mass Analysis ◽  
Ion Etching ◽  
Loading Effect ◽  
Batch Type ◽  
Etching Selectivity ◽  
Hbr Plasma

ABSTRACTThe influence of HBr discharge ambience on SiO2 etching is investigated. A batch type parallel-plate reactive ion etching (RIE) dry etcher was used. The discharge ambience was changed by changing the numbers of poly-Si and SiO2 wafers in the same chamber. It is found that as the number of poly-Si wafers increased, the poly-Si etch rate slightly decreased due to a loading effect and SiO2 etching rate drastically increased. The selectivity of poly-Si / SiO2 decreased with increasing the ratio of the loaded poly-Si number in the same chamber. When A12O3 wafers instead of poly-Si wafers were loaded with SiO2 substrates, SiO2 etching rate enhancement did not occur. Therefore, increase of SiO2 etch rate could not be explained using a loading effect. From the results of mass analysis during etching in Si contained HBr plasma, etching products SiBrx (x=1,2,3) peaks were observed. Namely, when the Si etching products were supplied to SiO2 surface, SiO2 etch rate increased. In order to suppress the enhancement of SiO2 etch rate, the etch temperature must be reduced.

ICP Etching of 4H-SiC Substrates

2013 ◽  
Vol 740-742 ◽  
pp. 825-828 ◽  
Author(s):  
Jerome Biscarrat ◽  
Jean François Michaud ◽  
Emmanuel Collard ◽  
Daniel Alquier
Keyword(s):  
Process Parameters ◽  
Plasma Etching ◽  
Inductively Coupled Plasma ◽  
Etch Rate ◽  
Effective Technique ◽  
Working Pressure ◽  
Inductively Coupled ◽  
Icp Etching ◽  
High Etch Rate ◽  
The Impact

Due to its inert chemical nature, plasma etching is the most effective technique to pattern SiC. In this paper, dry etching of 4H-SiC substrate in Inductively Coupled Plasma (ICP) has been studied in order to evaluate the impact of process parameters on the characteristics of etching such as etch rate and trenching effect. Key process parameters such as platen power and ICP coil power prove to be essential to control the SiC etch rate. On the other hand, the ICP coil power and the working pressure mainly master the trenching effect. Our results enlighten that high etch rate with minimal trenching effect can be obtained using high ICP coil power and low working pressure.

The effect of BCl3 pretreatment on the etching of AlN in Cl2-based plasma

2008 ◽  
Vol 1108 ◽  
Author(s):  
Xiaoyan Xu ◽  
Vladimir Kuryatkov ◽  
Boris Borisov ◽  
Mahesh Pandikunta ◽  
Sergey A Nikishin ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Plasma Etching ◽  
Inductively Coupled Plasma ◽  
Etch Rate ◽  
Reactive Ion Etching ◽  
Native Oxide ◽  
Short Exposure ◽  
Ion Etching ◽  
Inductively Coupled ◽  
High Etch Rate

AbstractThe effect of BCl3 and BCl3/Ar pretreatment on Cl2/Ar and Cl2/Ar/BCl3 dry etching of AlN is investigated using inductively coupled plasma reactive ion etching. The native AlN oxide can be effectively removed by a short exposure to BCl3 or BCl3/Ar plasma. Compared to the chlorine based plasma etching, BCl3/Ar is found to have the highest etch rate for both AlN and its native oxide. Following removal of the native oxide, Cl2/Ar/BCl3 plasma etching with 15% BCl3 fraction results in a high etch rate ˜ 87 nm/min and modest increases in the surface roughness.

The Benefits of Process Parameter Ramping During The Plasma Etching of High Aspect Ratio Silicon Structures

1998 ◽  
Vol 546 ◽  
Author(s):  
J. Hopkins ◽  
H. Ashraf ◽  
J. K. Bhardwaj ◽  
A. M. Hynes ◽  
I. Johnston ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
Plasma Etching ◽  
Etch Rate ◽  
Critical Dimension ◽  
Optical Devices ◽  
Aspect Ratios ◽  
Dimension Control ◽  
Silicon Structures ◽  
High Etch Rate ◽  
Product Specifications

AbstractIn the ongoing enhancement of MEMS applications, the STS Advanced Silicon Etch, (ASETM). process satisfies the demanding requirements of the industry. Typically, highly anisotropic. high aspect ratios profiles with fine CD (critical dimension) control are required. Selectivities to photoresist of 150:1 with Si etch rates of up to 10μm/min are demonstrated. Applications range from shallow etched optical devices to through wafer membrane etches. This paper details some of the fundamental trends of the ASETM process and goes on to discuss how the process has been enhanced to meet product specifications. Parameter ramping is a powerful technique used to achieve the often-conflicting requirements of high etch rate with good profile/CD control. The results are presented in this paper.

Plasma Etching of Silicon Dioxide and Silicon Nitride with Non-Perfluorocompound Chemistries: Trifluoroacetic Anhydride and Iodofluorocarbons

1996 ◽  
Vol 447 ◽  
Author(s):  
Simon M. Karecki ◽  
Laura C. Pruette ◽  
L. Rafael Reif
Keyword(s):  
Silicon Nitride ◽  
Silicon Dioxide ◽  
Plasma Etching ◽  
Etch Rate ◽  
Gas Flow ◽  
Sulfur Hexafluoride ◽  
Semiconductor Industry ◽  
Chemical Vapor ◽  
Trifluoroacetic Anhydride ◽  
Auger Electron Spectroscopy Data

AbstractPresently, the semiconductor industry relies almost exclusively on perfluorocompounds (e.g., tetrafluoromethane, hexafluoroethane, nitrogen trifluoride. sulfur hexafluoride, and. more recently, octafluoropropane) for the etching of silicon dioxide and silicon nitride films in wafer patterning and PECVD (plasma enhanced chemical vapor deposition) chamber cleaning applications. The use of perfluorocompounds (PFCs) by the industry is considered problematic because of the high global warming potentials (GWPs) associated with these substances. Potential replacements for perfluorocompounds are presently being evaluated at MIT. In an initial stage of the study, intended to screen potential candidates on the basis of etch performance, a large number of compounds is being tested in a commercially available magnetically enhanced reactive ion etch tool. The potential alternatives discussed in this work are trifluoroacetic anhydride (TFAA) and three members of the iodofluorocarbon (IFC) family – iodotrifluoromethane, iodopentafluorocthane, and 2-iodoheptafluoropropane. This paper will present the results of etch rate comparisons between TFAA and octafluoropropane, a perfluorinated dielectric etchant. Designed experiment (DOE) methodology, combined with neural network software, was used to study a broad parameter space of reactor conditions. The effects of pressure, magnetic field, and gas flow rates were studied. Additionally, more limited tests were carried out with the three iodofluorocarbon gases. Etch rate data, as well as Auger electron spectroscopy data from substrates exposed to IFC plasmas will be presented. All gases were evaluated using both silicon dioxide as well as silicon nitride substrates. Results indicate that these compounds may be potentially viable in plasma etching applications.

Fluorocarbon plasma etching of silicon: Factors controlling etch rate

2004 ◽  
Vol 96 (1) ◽  
pp. 65-70 ◽  
Author(s):  
David Humbird ◽  
David B. Graves
Keyword(s):  
Plasma Etching ◽  
Etch Rate ◽  
Fluorocarbon Plasma

High Etch Rate Modes in Microwave Plasma Etching of Silicon in High Magnetic Fields

1990 ◽  
Vol 29 (Part 1, No. 11) ◽  
pp. 2641-2643 ◽  
Author(s):  
Haruo Shindo ◽  
Tetsuro Hashimoto ◽  
Fumitake Amasaki ◽  
Yasuhiro Horiike
Keyword(s):  
Magnetic Fields ◽  
Plasma Etching ◽  
Etch Rate ◽  
Microwave Plasma ◽  
High Magnetic Fields ◽  
High Etch Rate

Fabrication of SiC Nanopillars by Inductively Coupled SF6/O2 Plasma

2012 ◽  
Vol 711 ◽  
pp. 66-69 ◽  
Author(s):  
Ji Hoon Choi ◽  
Laurence Latu-Romain ◽  
Florian Dhalluin ◽  
Thierry Chevolleau ◽  
Bassem Salem ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Etch Rate ◽  
High Selectivity ◽  
Nanometer Scale ◽  
Etch Depth ◽  
Fabrication Technique ◽  
Top Down ◽  
Inductively Coupled ◽  
High Anisotropy ◽  
High Etch Rate

A top-down fabrication technique for nanometer scale silicon carbide (SiC) pillars has been demonstrated by using inductively coupled SF6/O2 plasma etching. At optimal etching conditions, the obtained SiC nanopillars exhibit high anisotropy features (aspect ratio ~ 6.5) with high etch depth (>7 μm). The etch characteristics of SiC nanopillars under these conditions show a high etch rate (550 nm/min) and a high selectivity (over 60 for Ni).

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