Ex situ scanning tunneling microscopy investigations of the modification of titanium surface due to corrosion processes

1994 ◽  
Vol 12 (3) ◽  
pp. 1547 ◽  
Author(s):  
A. A. Ejov
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Titanium Surface ◽  
Ex Situ ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Modification Of Titanium

Nanofabrication of Titanium Surface by Tip-Induced Anodization in Scanning Tunneling Microscopy

1993 ◽  
Vol 32 (Part 2, No. 4A) ◽  
pp. L553-L555 ◽  
Author(s):  
Hiroyuki Sugimura ◽  
Tatsuya Uchida ◽  
Noboru Kitamura ◽  
Hiroshi Masuhara
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Titanium Surface ◽  
Scanning Tunneling ◽  
Tunneling Microscopy

Voltage-Dependence of Scanning Tunneling Microscopy on Titanium Surface in Air

1986 ◽  
Vol 25 (Part 2, No. 6) ◽  
pp. L516-L518 ◽  
Author(s):  
Seizo Morita ◽  
Takao Okada ◽  
Yuri Ishigame ◽  
Chiaki Sato ◽  
Nobuo Mikoshiba
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Titanium Surface ◽  
Voltage Dependence ◽  
Scanning Tunneling ◽  
Tunneling Microscopy

Migration Enhanced Epitaxy of GaAs Studied by Reflection High Energy Electron Diffraction and Scanning Tunneling Microscopy

1993 ◽  
Vol 312 ◽  
Author(s):  
Jianming Fu ◽  
D. L. Miller ◽  
J. Kim ◽  
M. C. Gallagher ◽  
R. F. Willis
Keyword(s):  
Electron Diffraction ◽  
Scanning Tunneling Microscopy ◽  
High Energy ◽  
Energy Electron ◽  
Ex Situ ◽  
Scanning Tunneling ◽  
High Energy Electron ◽  
Tunneling Microscopy ◽  
Migration Enhanced Epitaxy ◽  
Step Density

AbstractMigration enhanced epitaxy (MEE) of GaAs on (001) GaAs substrates was studied by reflection high energy electron diffraction (RHEED) and scanning tunneling microscopy (STM). In MEE, Ga and As species are alternately deposited on the growing surface. Ga adatom migration can be enhanced by the low arsenic pressure environment. The STM study was performed ex-situ by the arsenic capping and decapping procedure. We have demonstrated the correlation between the peak RHEED specular intensity during MEE growth and the variation of the lateral step density on the surface, even though the surface stoichiometry changes repetitively during MEE. The peak RHEED intensity during MEE is inversely dependent on the surface step density. The MEE surface exhibited a lower step density than the MBE surface, as shown by both RHEED and STM. However, the MEE surface still exhibited a much higher step density than a well-annealed surface. Consequently we believe that to achieve an atomically flat interface, annealing at high temperature in an arsenic flux is still necessary even if MEE is employed.

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