Chemical beam epitaxy of InP-based solar cells and tunnel junctions

1994 ◽  
Vol 12 (2) ◽  
pp. 1251 ◽  
Author(s):  
M. F. Vilela
Keyword(s):  
Solar Cells ◽  
Tunnel Junctions ◽  
Chemical Beam Epitaxy

Modeling of tunnel junctions for high efficiency solar cells

2010 ◽  
Vol 97 (4) ◽  
pp. 042111 ◽  
Author(s):  
John R. Hauser ◽  
Zach Carlin ◽  
S. M. Bedair
Keyword(s):  
Solar Cells ◽  
High Efficiency ◽  
Tunnel Junctions ◽  
High Efficiency Solar Cells

GaAs‐AlGaAs tunnel junctions for multigap cascade solar cells

1982 ◽  
Vol 53 (1) ◽  
pp. 744-748 ◽  
Author(s):  
D. L. Miller ◽  
S. W. Zehr ◽  
J. S. Harris
Keyword(s):  
Solar Cells ◽  
Tunnel Junctions

Polarization enhanced tunnel junctions in tandem solar cells

2011 ◽  
Author(s):  
Shuai Zhou ◽  
Randy P. Tompkins ◽  
Kenneth A. Jones ◽  
Chad Gallinat ◽  
Paul Rotella ◽  
...  
Keyword(s):  
Solar Cells ◽  
Tunnel Junctions ◽  
Tandem Solar Cells

Silicon Tunnel Junctions Produced by Ion Implantation and Diffusion Processes for Tandem Solar Cells

2018 ◽  
Vol 8 (6) ◽  
pp. 1436-1442
Author(s):  
Pierre Bellanger ◽  
Albert Minj ◽  
Alain Fave ◽  
Zakaria Djebbour ◽  
Stephane Roques ◽  
...  
Keyword(s):  
Solar Cells ◽  
Ion Implantation ◽  
Diffusion Processes ◽  
Tunnel Junctions ◽  
Tandem Solar Cells ◽  
And Diffusion

Non-Local Recombination in “Tunnel Junctions” of Multijunction Amorphous Si Alloy Solar Cells

1994 ◽  
Vol 336 ◽  
Author(s):  
Jingya Hou ◽  
Jianping Xi ◽  
Frank Kampas ◽  
Sanghoon Bae ◽  
S. J. Fonash
Keyword(s):  
Solar Cells ◽  
Tunnel Junction ◽  
Tunnel Junctions ◽  
Energy Conversion Efficiency ◽  
State Density ◽  
Defect State ◽  
Large Defect ◽  
Recombination Mechanism ◽  
Non Local ◽  
Amorphous Si

ABSTRACTThis paper analyzes the charge transport in “tunnel junctions” of amorphous Si Material based multijunction solar cells and proposes some guidelines for making good “tunnel junctions” based on the analysis. The Mechanism of the current flow in these “tunnel” junctions is recombination. However, the recombination mechanism is not the usual localized recombination but is non-localized recombination. The energy analysis shows that the usual localized recombination will cause a large energy loss and result in much lower energy conversion efficiency and Voc than the experimentally measured values. In non-local recombination, opposite charge carriers located at different locations can recombine by tunneling into a defect state. Based on this Mechanism, a good “tunnel junction” should be thin, with a large defect state density in the middle region of the “tunnel junction”. Broad tail states material and a thin layer small band gap material in tunnel junctions may improve the non-local recombination by providing more intermediate states for charge to tunnel through.

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