Analysis of the possibility of performing microelectronic microwave vacuum devices with extended interaction on field emitter arrays

1993 ◽  
Vol 11 (2) ◽  
pp. 477 ◽  
Author(s):  
N. I. Sinitsyn
Keyword(s):  
Field Emitter ◽  
Field Emitter Arrays ◽  
Extended Interaction

Optically stimulated picosecond field emission pulses from gated p-silicon field emitter arrays

2007 ◽  
Vol 90 (8) ◽  
pp. 083506 ◽  
Author(s):  
Chin-Jen Chiang ◽  
Kendrick X. Liu ◽  
Jonathan P. Heritage
Keyword(s):  
Field Emission ◽  
Field Emitter ◽  
Field Emitter Arrays

Fabrication and Characterization of Diamond-Clad Silicon Field Emitter Arrays

1995 ◽  
Vol 34 (Part 1, No. 12B) ◽  
pp. 6926-6931 ◽  
Author(s):  
Huang-Chung Cheng ◽  
Tzu-Kun Ku ◽  
Biing-Bang Hsieh ◽  
Sheng-Hsiung Chen ◽  
Shye-Yuh Leu ◽  
...  
Keyword(s):  
Field Emitter ◽  
Field Emitter Arrays ◽  
Fabrication And Characterization

Surface Modification of Si Field Emitter Arrays for Vacuum Sealing

2000 ◽  
Vol 621 ◽  
Author(s):  
M. Nagao ◽  
H. Tanabe ◽  
T. Kobayashi ◽  
T. Matsukawa ◽  
S. Kanemaru ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Vacuum Packaging ◽  
Field Emitter ◽  
Vacuum Sealing ◽  
Field Emitter Arrays ◽  
Vacuum Microelectronics ◽  
Field Emission Displays ◽  
Before And After ◽  
Heating Treatment ◽  
Field Emitter Array

ABSTRACTVacuum packaging is a very important issue for vacuum microelectronics devices, especially for field emission displays. Emission current from the field emitter array (FEA), however, is known to decrease significantly after the vacuum packaging process. The current decrease is caused by heating treatment in the vacuum sealing process. In the present paper, the effect of the heating treatment on Si FEA was investigated and CHF3 plasma treatment was proposed for avoiding the problem. The Si FEA was exposed to plasma for 15sec and emission characteristics were measured before and after the vacuum sealing process using frit. It was confirmed that CHF3 plasma treatment was very effective for avoiding the emission degradation of the Si FEA. Details of the heating damage and CHF3 plasma treatment are described.

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