p-type ZnSe grown by molecular beam epitaxy with remote microwave plasma of N2

1993 ◽  
Vol 11 (6) ◽  
pp. 2057 ◽  
Author(s):  
Y. Kawakami
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Microwave Plasma ◽  
P Type

Hydrogen Passivation of Si and Be Dopants in InAlAs

1991 ◽  
Vol 240 ◽  
Author(s):  
G. Roos ◽  
N. M. Johnson ◽  
Y. C. Pao ◽  
J. S. Harris ◽  
C.y Herring
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Microwave Plasma ◽  
Hydrogen Passivation ◽  
Electrical Measurements ◽  
Annealing Step ◽  
Si Doped ◽  
P Type ◽  
Secondary Ion ◽  
Limited Process

ABSTRACTHydrogen passivation and thermal reactivation of Si donors and Be acceptors were investigated in In0.52Al0.48As grown by molecular beam epitaxy. The semiconducting alloy was passivated by exposure to monatomic hydrogen or deuterium from a remote microwave plasma. The passivation was achieved by exposing the samples to monatomic hydrogen at temperatures between 200 and 250 °C for 1h. The electrical activity of the dopants was monitored by spreading resistance and C-V measurements. The samples were homogeneously doped to concentrations of 1.5×1016 or 6×1017 Si / cm3 and 6×1017 Be / cm3. Both dopants were passivated by more than two orders of magnitude through the epitaxial layers. An additional annealing step (440°C, 5 min) resulted in a complete reactivation of the passivated dopants. In addition to the electrical measurements, secondary ion mass spectroscopy showed that for both the Be- and the Si-doped layers the hydrogen profiles were essentially identical to the dopant profiles throughout the epilayers. This behaviour suggests that hydrogen migration is a dopant-trapping-limited process in n-and p-type In0.52Al0.48As.

Molecular beam epitaxy of p-type ZnSTe:N and p-n-junction light emitting diodes

2014 ◽  
Vol 11 (7-8) ◽  
pp. 1282-1285 ◽  
Author(s):  
Kunio Ichino ◽  
Takahiro Kojima ◽  
Shunsuke Obata ◽  
Takuma Kuroyanagi ◽  
Kenta Kimata ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
P Type

scholarly journals Comparison of deep level spectra in p-type and n-type GaN grown by molecular beam epitaxy [phys. stat. sol. (b) 244, No. 6, 1867–1871 (2007)]

2007 ◽  
Vol 244 (12) ◽  
pp. 4692-4692
Author(s):  
A. Armstrong ◽  
A. Corrion ◽  
C. Poblenz ◽  
U. K. Mishra ◽  
J. S. Speck ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Deep Level ◽  
P Type

p‐type doping of gallium antimonide grown by molecular beam epitaxy using silicon

1990 ◽  
Vol 57 (21) ◽  
pp. 2256-2258 ◽  
Author(s):  
T. M. Rossi ◽  
D. A. Collins ◽  
D. H. Chow ◽  
T. C. McGill
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Gallium Antimonide ◽  
P Type

Heavily carbon-doped p-type (In)GaAs grown by gas-source molecular beam epitaxy using diiodomethane

1995 ◽  
Vol 150 ◽  
pp. 221-226
Author(s):  
T. Tomioka ◽  
N. Okamoto ◽  
H. Ando ◽  
S. Yamaura ◽  
T. Fujii
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Carbon Doped ◽  
Gas Source ◽  
P Type

High Gain and High Sensitive Blue-Ultraviolet Avalanche Photodiodes (APDs) of ZnSSe n+-i-p Structure Molecular Beam Epitaxy (MBE) Grown on p-type GaAs Substrates

2005 ◽  
Vol 44 (No. 17) ◽  
pp. L508-L510 ◽  
Author(s):  
Tomoki Abe ◽  
Koshi Ando ◽  
Katsushi Ikumi ◽  
Hiroyasu Maeta ◽  
Junji Naruse ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Avalanche Photodiodes ◽  
High Gain ◽  
Gaas Substrates ◽  
P Type

p-type conductivity control of ZnSe with insertion of ZnTe:Li submonolayers in metalorganic molecular-beam epitaxy

1998 ◽  
Vol 84 (11) ◽  
pp. 6100-6104 ◽  
Author(s):  
J. Hirose ◽  
K. Uesugi ◽  
M. Hoshiyama ◽  
T. Numai ◽  
I. Suemune ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Type Conductivity ◽  
Metalorganic Molecular Beam Epitaxy ◽  
P Type

p‐type doping of InP and Ga0.47In0.53As using diethylzinc during metalorganic molecular beam epitaxy

1991 ◽  
Vol 58 (21) ◽  
pp. 2378-2380 ◽  
Author(s):  
R. A. Hamm ◽  
D. Ritter ◽  
H. Temkin ◽  
M. B. Panish ◽  
M. Geva
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Metalorganic Molecular Beam Epitaxy ◽  
P Type
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