Work function, electron affinity, and band bending at decapped GaAs(100) surfaces

1992 ◽  
Vol 10 (4) ◽  
pp. 1886 ◽  
Author(s):  
W. Chen
Keyword(s):  
Work Function ◽  
Electron Affinity ◽  
Band Bending

Application of Surface Photovoltage Spectroscopy in Surface Analysis

1992 ◽  
Vol 261 ◽  
Author(s):  
Iain D. Baikie ◽  
Eimert Venderbosch ◽  
Birgitta Hall
Keyword(s):  
Work Function ◽  
Surface Analysis ◽  
Electron Affinity ◽  
Surface Photovoltage ◽  
Semiconductor Surface ◽  
Temperature Dependent ◽  
Band Bending ◽  
Surface Photovoltage Spectroscopy ◽  
Wide Range

ABSTRACTExtension of the Kelvin probe vibrating capacitor technique of measuring work function, via Illumination of the semiconductor surface, i.e., Surface Photovoltage Spectroscopy (SPS), has many potential applications in the field of surface analysis.The combination of broad-band (white) and monochromatic radiation, together with measurement of the dark signal permits complete characterisation of the semiconductor work function via determination of the electron-affinity, surface potential and Local DensIty-of-States (LDOS). The work function is an extremely sensitive indicator of a wide range of surface processes, e.g., particle adsorption, stress, defect creation, phase-transitions, etc.We Illustrate application of this technique in the study of the temperature dependent initial oxidation behaviour of p-type Si(111) 7×7 between 100 and 300 K. The SPV response of the clean surface at 100 K corresponds to the capture of photo-stimulated electrons by a band of surface states centered around 1.4, 1.7, 1.9 and 2.4 eV. This response completely disappears at the peak of the (dark) work function change (0.3L) corresponding to a near complete removal of dangling bond states. The temperature-dependent white-light SPS response permits determination of the band-bending throughout the adsorption process. We observe that at 100 K the band-bending substantially decreases during the initial adsorption phase (0.1 L), after this dose it remains constant. However at 300 K the band-bending decreases much later, i.e., >10 L, in conjunction with oxygen permeation through the surface layer.In conclusion Surface Photovoltage Spectroscopy SPS is a simple and flexible method which can be used to follow the rather complex changes occurring at the semiconductor surface. It is a non-contact, nondestructive technique which allows simultaneous determination of both semiconductor band-bending and electron affinity.

Work function, band bending, and electron affinity in surface conducting (100) diamond

2011 ◽  
Vol 208 (9) ◽  
pp. 2062-2066 ◽  
Author(s):  
M. T. Edmonds ◽  
C. I. Pakes ◽  
S. Mammadov ◽  
W. Zhang ◽  
A. Tadich ◽  
...  
Keyword(s):  
Work Function ◽  
Electron Affinity ◽  
Band Bending

Work function, electron affinity and band bending of zinc oxide surfaces

1984 ◽  
Vol 141 (1) ◽  
pp. 109-125 ◽  
Author(s):  
K. Jacobi ◽  
G. Zwicker ◽  
A. Gutmann
Keyword(s):  
Zinc Oxide ◽  
Work Function ◽  
Electron Affinity ◽  
Oxide Surfaces ◽  
Band Bending

Work function, electron affinity and band bending of zinc oxide surfaces

1984 ◽  
Vol 141 (1) ◽  
pp. A193
Author(s):  
K. Jacobi ◽  
G. Zwicker ◽  
A. Gutmann
Keyword(s):  
Zinc Oxide ◽  
Work Function ◽  
Electron Affinity ◽  
Oxide Surfaces ◽  
Band Bending

Determining of electron affinity and work function of sp2-bonded nanocrystalline boron nitride thin films

2020 ◽  
Vol 829 ◽  
pp. 154103
Author(s):  
Fei Hua ◽  
Siyuan Ye ◽  
Shuhao Chen ◽  
Hangsheng Yang ◽  
Xiaozhi Wang ◽  
...  
Keyword(s):  
Thin Films ◽  
Boron Nitride ◽  
Work Function ◽  
Electron Affinity

Built-in Potential of a Pentacene Pin Homojunction Studied by Ultraviolet Photoemission Spectroscopy

2010 ◽  
Vol 1270 ◽  
Author(s):  
Selina Olthof ◽  
Hans Kleemann ◽  
Björn Lüssem ◽  
Karl Leo
Keyword(s):  
Small Molecules ◽  
Work Function ◽  
Photoelectron Spectroscopy ◽  
Photoemission Spectroscopy ◽  
Ultraviolet Photoelectron Spectroscopy ◽  
Organic P ◽  
Band Bending ◽  
Silver Substrate ◽  
N Doping ◽  
Ultraviolet Photoemission Spectroscopy

AbstractIn this paper we investigate the energetic alignment in an organic p-i-n homojunction using ultraviolet photoelectron spectroscopy. The device is made of pentacene and we emploay the small molecules NDN1 for n-doping and NDP2 for p-doping the layers. The full p-i-n structure is deposited stepwise on a silver substrate to learn about the interface dipoles and band bending effects present in the device. From the change in work function between the p- and n-doped layers we gain knowledge of the built-in potential of this junction.

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