Growth of β-SiC film on Si substrate by surface reaction using hydrocarbon gas and Si molecular beams in ultrahigh vacuum

1992 ◽  
Vol 10 (2) ◽  
pp. 930 ◽  
Author(s):  
Kinam Kim
Keyword(s):  
Surface Reaction ◽  
Ultrahigh Vacuum ◽  
Molecular Beams ◽  
Si Substrate ◽  
Hydrocarbon Gas ◽  
Sic Film

Carbonization Dynamics of Silicon Surfaces By Hydrocarbon Gas Molecular Beams

1991 ◽  
Vol 220 ◽  
Author(s):  
Tatsuo Yoshinobu ◽  
Takashi Fuyuki ◽  
Hiroyuki Matsunami
Keyword(s):  
Substrate Temperature ◽  
Molecular Beam ◽  
Surface Reaction ◽  
Narrow Range ◽  
Gradual Increase ◽  
Molecular Beams ◽  
Silicon Surfaces ◽  
Surface Oxide Layer ◽  
Single Crystalline ◽  
Hydrocarbon Gas

ABSTRACTCarbonization dynamics of Si surfaces using a hydrocarbon gas molecular beam was investigated. In case of carbonizing atomically clean Si surfaces with C2H2, single crystalline 3C-SiC layers were obtained only In the narrow range of a substrate temperature near 780 °C. Control of surface reaction by a cap of very thin surface oxide layer and gradual increase of substrate temperature during carbonization were found to be effective in forming single crystalline 3C-SiC layers reproducibly.

Heteroepitaxial Growth of 3C-SiC on Si (111) Substrate Using AlN as a Buffer Layer

2008 ◽  
Vol 600-603 ◽  
pp. 251-254 ◽  
Author(s):  
Yong Mei Zhao ◽  
Guo Sheng Sun ◽  
Xing Fang Liu ◽  
Jia Ye Li ◽  
Wan Shun Zhao ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Chemical Vapor ◽  
Heteroepitaxial Growth ◽  
Si Substrate ◽  
Si Substrates ◽  
Good Crystallinity ◽  
Aln Film ◽  
Pressure Chemical ◽  
Aln Buffer ◽  
Sic Film

Using AlN as a buffer layer, 3C-SiC film has been grown on Si substrate by low pressure chemical vapor deposition (LPCVD). Firstly growth of AlN thin films on Si substrates under varied V/III ratios at 1100oC was investigated and the (002) preferred orientational growth with good crystallinity was obtained at the V/III ratio of 10000. Annealing at 1300oC indicated the surface morphology and crystallinity stability of AlN film. Secondly the 3C-SiC film was grown on Si substrate with AlN buffer layer. Compared to that without AlN buffer layer, the crystal quality of the 3C-SiC film was improved on the AlN/Si substrate, characterized by X-ray diffraction (XRD) and Raman measurements.

Influence of Hydrogen Plasma Treatment on a-SiC Resistivity of the SiC/SiO2/Si Structures

2011 ◽  
Vol 276 ◽  
pp. 21-25
Author(s):  
S.O. Gordienko ◽  
A. Nazarov ◽  
A.V. Rusavsky ◽  
A.V. Vasin ◽  
N. Rymarenko ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Plasma Treatment ◽  
Structural Characteristics ◽  
Hydrogen Plasma ◽  
Rf Plasma ◽  
Current Transport ◽  
Electrical Characteristics ◽  
Variable Range Hopping ◽  
Si Substrate ◽  
Sic Film

This paper presents an analysis of the electrical characteristics of the amorphous silicon carbide films deposited on the SiO2/Si substrate. Aspects of RF plasma treatment on electrical and structural characteristics of a-SiC film are discussed. It is demonstrated that the dominant mechanism of current transport in the a-SiC thin film is determined by variable-range hopping conductivity at the Fermi level. Studies of the a-SiC film at temperatures from 300 K to 600 K also indicate that silicon carbide is a perspective material for fabrication of temperature sensor.

Morphological Instability of a Sic Film During Carbonization

1996 ◽  
Vol 436 ◽  
Author(s):  
C.-H. Chiu ◽  
L. B. Freund
Keyword(s):  
Surface Energy ◽  
Strain Energy ◽  
Film Surface ◽  
Interface Energy ◽  
Reaction Process ◽  
Diffusion Reaction ◽  
Carbon Precursor ◽  
Morphological Stability ◽  
Si Substrate ◽  
Sic Film

AbstractA model is developed to understand the morphological stability of a SiC film on a Si substrate during carbonization where the Si substrate is exposed to a carbon precursor. The morphological stability is determined by considering the surface evolution along a slightly wavy film surface and film-substrate interface. The morphological evolution along the film surface is dominated by surface diffusion and along the interface by a chemical reaction. The kinetic analysis shows the stability is controlled by the film surface energy, the interface energy, the diffusion-reaction process of the carbon precursor, and the strain energy. At small wavelengths of the surface profiles, the two types of surface energy dominate, which results in stable morphology. The diffusion-reaction process dictates the surface stability at large wavelengths. The strain energy may cause the surfaces to become unstable at moderate wavelengths; the instability can be completely suppressed by the diffusion-reaction process and the film surface energy, while it is enhanced by a large value of interface energy.

Plasma Etch Void Formed at the SiC Film/Si Substrate Interface

1998 ◽  
Vol 37 (Part 1, No. 6A) ◽  
pp. 3238-3244 ◽  
Author(s):  
Yong Sun ◽  
Tatsuro Miyasato
Keyword(s):  
Si Substrate ◽  
Plasma Etch ◽  
Substrate Interface ◽  
Sic Film

High Quality Graphene Formation on 3C-SiC/4H-AlN/Si Heterostructure

2014 ◽  
Vol 806 ◽  
pp. 89-93 ◽  
Author(s):  
Sai Jiao ◽  
Yuya Murakami ◽  
Hiroyoki Nagasawa ◽  
Hirokazu Fukidome ◽  
Isao Makabe ◽  
...  
Keyword(s):  
Quality Improvement ◽  
Production Cost ◽  
Structural Quality ◽  
Si Substrate ◽  
High Quality ◽  
Device Applications ◽  
High Scalability ◽  
Nanoelectromechanical System ◽  
Sic Film

The growth of graphene on 3C-SiC/Si heterostructure is a promising approach, which provides low production cost, high scalability and easiness of nanoelectromechanical system fabrication. However, the quality of graphene is still insufficient for device applications due to mediocre morphological and structural quality of the 3C-SiC epilayers compared to bulk SiC crystals and to excessive Si out-diffusion from the Si substrate. Here, we propose a solution of inserting a 4H-AlN layer between 3C-SiC and Si, which allows us to polish the 3C-SiC film without worrying about enhancement of the Si out-diffusion despite the thinning after the polishing. With this insertion, a considerable quality improvement is achieved in our graphene on silicon.

Conversion of single crystal Si(100) to SiC film by C2H2

1993 ◽  
Vol 8 (3) ◽  
pp. 535-544 ◽  
Author(s):  
Chien C. Chiu ◽  
Seshu B. Desu
Keyword(s):  
Thin Film ◽  
Photoelectron Spectroscopy ◽  
Smooth Surface ◽  
Reaction Times ◽  
Si Substrate ◽  
Etch Pits ◽  
X Ray ◽  
Sic Film ◽  
Sic Films ◽  
Scanning Electron

SiC thin films grown from the reaction between acetylene (C2H2) and the Si(100) substrates in a horizontal hot-wall CVD reactor by different procedures were studied using x-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM). The growth of the SiC films was observed from the behavior of Si2p peaks and their plasmons. A SiC thin film with a thickness of 35 Å and having a smooth surface morphology was obtained in C2H2 diluted by H2 at 1050 °C for a period of 60 min. Etch pits and hillocks were observed with increasing reaction time at 1050 °C. For the conversion conducted in C2H2, but in the absence of H2, a SiC monolayer with smooth morphology was obtained at 950 °C for 7 min and defects were observed for longer reaction times at this temperature. Defects were also observed for reaction times as short as 10 s at higher reaction temperatures (e.g., 1000 °C). H2 seems to play a key role in suppressing the formation of defects and the reaction between C2H2 and Si substrate. The formation of defects was correlated to the out-diffusion of Si in the carbonization process.

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