Direct-current and radio-frequency properties of InAlAs/InGaAs pseudomorphic modulation doped field effect transistors with graded channels

J. Kolodzey

doi:10.1116/1.585071

Direct-current and radio-frequency properties of InAlAs/InGaAs pseudomorphic modulation doped field effect transistors with graded channels

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.585071 ◽

1990 ◽

Vol 8 (2) ◽

pp. 360

Author(s):

J. Kolodzey

Keyword(s):

Radio Frequency ◽

Direct Current ◽

Field Effect ◽

Field Effect Transistors ◽

Frequency Properties

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Direct-current and radio-frequency characterizations of GaAs metal-insulator-semiconductor field-effect transistors enabled by self-assembled nanodielectrics

Applied Physics Letters ◽

10.1063/1.2776013 ◽

2007 ◽

Vol 91 (9) ◽

pp. 092103 ◽

Cited By ~ 2

Author(s):

H. C. Lin ◽

S. K. Kim ◽

D. Chang ◽

Y. Xuan ◽

S. Mohammadi ◽

...

Keyword(s):

Radio Frequency ◽

Direct Current ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Self Assembled

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Theoretical study of direct-current and radio-frequency breakdown in GaN wurtzite- and zinc-blende-phase MESFETs (metal-semiconductor field-effect transistors)

Journal of Physics Condensed Matter ◽

10.1088/0953-8984/13/46/316 ◽

2001 ◽

Vol 13 (46) ◽

pp. 10477-10486 ◽

Cited By ~ 2

Author(s):

Maziar Farahmand ◽

Michael Weber ◽

Louis Tirino ◽

Kevin F Brennan ◽

P Paul Ruden

Keyword(s):

Radio Frequency ◽

Direct Current ◽

Field Effect ◽

Theoretical Study ◽

Field Effect Transistors ◽

Zinc Blende

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Direct-current and radio-frequency characterization of submicron striped-channel field effect transistor structures using focused ion beam and electron-beam lithography

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.585948 ◽

1992 ◽

Vol 10 (6) ◽

pp. 2945 ◽

Cited By ~ 1

Author(s):

M. M. Hashemi

Keyword(s):

Electron Beam ◽

Radio Frequency ◽

Direct Current ◽

Electron Beam Lithography ◽

Field Effect ◽

Field Effect Transistor ◽

Focused Ion Beam ◽

Ion Beam ◽

Effect Transistor

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Comparisons of Radio-Frequency Performance of Quasi-Silicon-on-Insulator and Conventional Silicon-on-Insulator Power Metal–Oxide–Semiconductor Field-Effect-Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.7635 ◽

2007 ◽

Vol 46 (12) ◽

pp. 7635-7638 ◽

Cited By ~ 2

Author(s):

Yasushi Hiraoka ◽

Satoshi Matsumoto

Keyword(s):

Metal Oxide ◽

Radio Frequency ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor

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Correlation between Charge Pumping Method and Direct-Current Current Voltage Method in p-Type Metal-Oxide-Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.38.4696 ◽

1999 ◽

Vol 38 (Part 1, No. 8) ◽

pp. 4696-4698 ◽

Cited By ~ 6

Author(s):

Bin-Bin Jie ◽

Kok-Hooi Ng ◽

Ming-Fu Li ◽

Keng-Foo Lo

Keyword(s):

Metal Oxide ◽

Direct Current ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Charge Pumping ◽

Current Voltage ◽

P Type

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Investigation of silicon field‐effect transistors in cryogenic amplifiers for radio frequency superconducting quantum interference devices

Review of Scientific Instruments ◽

10.1063/1.1145497 ◽

1995 ◽

Vol 66 (5) ◽

pp. 3296-3299

Author(s):

T. Becker ◽

M. Mück ◽

C. Heiden

Keyword(s):

Radio Frequency ◽

Quantum Interference ◽

Field Effect ◽

Field Effect Transistors ◽

Superconducting Quantum Interference Devices ◽

Superconducting Quantum Interference

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Radio Frequency Performance of Hetero-Gate-Dielectric Tunneling Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.7567/jjap.50.124301 ◽

2011 ◽

Vol 50 (12R) ◽

pp. 124301 ◽

Cited By ~ 8

Author(s):

In Man Kang ◽

Jung-Shik Jang ◽

Woo Young Choi

Keyword(s):

Radio Frequency ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Tunneling Field Effect Transistors

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Extraction Method for Substrate-Related Components of Vertical Junctionless Silicon Nanowire Field-Effect Transistors and Its Verification on Radio Frequency Characteristics

Japanese Journal of Applied Physics ◽

10.7567/jjap.51.06fe20 ◽

2012 ◽

Vol 51 (6S) ◽

pp. 06FE20 ◽

Cited By ~ 1

Author(s):

Sunhae Shin ◽

In Man Kang ◽

Kyung Rok Kim

Keyword(s):

Radio Frequency ◽

Extraction Method ◽

Field Effect ◽

Field Effect Transistors ◽

Silicon Nanowire ◽

Frequency Characteristics

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Investigation of Hot Carrier Degradation in Shallow-Trench-Isolation-Based High-Voltage Laterally Diffused Metal–Oxide–Semiconductor Field-Effect Transistors by a Novel Direct Current Current–Voltage Technique

Japanese Journal of Applied Physics ◽

10.7567/jjap.51.04dp08 ◽

2012 ◽

Vol 51 (4S) ◽

pp. 04DP08 ◽

Cited By ~ 1

Author(s):

Yandong He ◽

Ganggang Zhang

Keyword(s):

High Voltage ◽

Direct Current ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Shallow Trench Isolation ◽

Hot Carrier ◽

Current Voltage ◽

Trench Isolation

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Study of source access resistance at direct current quiescent points for AlGaN/GaN heterostructure field-effect transistors

Journal of Applied Physics ◽

10.1063/1.4953645 ◽

2016 ◽

Vol 119 (22) ◽

pp. 224501 ◽

Cited By ~ 7

Author(s):

Ming Yang ◽

Yuanjie Lv ◽

Zhihong Feng ◽

Wei Lin ◽

Peng Cui ◽

...

Keyword(s):

Direct Current ◽

Field Effect ◽

Field Effect Transistors ◽

Heterostructure Field Effect Transistors ◽

Access Resistance ◽

Gan Heterostructure

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