In situ monitoring of selective etch of III–V compound semiconductor heterostructures

1989 ◽  
Vol 7 (4) ◽  
pp. 618 ◽  
Author(s):  
I. Hase
Keyword(s):  
Compound Semiconductor ◽  
Semiconductor Heterostructures ◽  
In Situ Monitoring ◽  
Selective Etch

scholarly journals Development of an electrochemical sensor for in-situ monitoring of reactive species produced by cold physical plasma

2021 ◽  
Vol 326 ◽  
pp. 129007
Author(s):  
Zahra Nasri ◽  
Giuliana Bruno ◽  
Sander Bekeschus ◽  
Klaus-Dieter Weltmann ◽  
Thomas von Woedtke ◽  
...  
Keyword(s):  
Electrochemical Sensor ◽  
Reactive Species ◽  
In Situ Monitoring ◽  
Physical Plasma

In Situ Monitoring of Polaron Localization and Cell Activity with Charge Accumulation Spectroscopy

2021 ◽  
pp. 2105799
Author(s):  
Yu Zhang ◽  
Li Yang ◽  
Jintao Wang ◽  
Wangying Xu ◽  
Qiming Zeng ◽  
...  
Keyword(s):  
Cell Activity ◽  
In Situ Monitoring ◽  
Charge Accumulation

scholarly journals In-situ monitoring for liquid metal jetting using a millimeter-wave impedance diagnostic

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Tammy Chang ◽  
Saptarshi Mukherjee ◽  
Nicholas N. Watkins ◽  
David M. Stobbe ◽  
Owen Mays ◽  
...  
Keyword(s):  
Liquid Metal ◽  
Millimeter Wave ◽  
Manufacturing Systems ◽  
Wave Impedance ◽  
In Situ Monitoring ◽  
Full Wave ◽  
Drop On Demand ◽  
The Time Domain ◽  
Metal Droplets

AbstractThis article presents a millimeter-wave diagnostic for the in-situ monitoring of liquid metal jetting additive manufacturing systems. The diagnostic leverages a T-junction waveguide device to monitor impedance changes due to jetted metal droplets in real time. An analytical formulation for the time-domain T-junction operation is presented and supported with a quasi-static full-wave electromagnetic simulation model. The approach is evaluated experimentally with metallic spheres of known diameters ranging from 0.79 to 3.18 mm. It is then demonstrated in a custom drop-on-demand liquid metal jetting system where effective droplet diameters ranging from 0.8 to 1.6 mm are detected. Experimental results demonstrate that this approach can provide information about droplet size, timing, and motion by monitoring a single parameter, the reflection coefficient amplitude at the input port. These results show the promise of the impedance diagnostic as a reliable in-situ characterization method for metal droplets in an advanced manufacturing system.

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