Kinetic aspects of growth front surface morphology and defect formation during molecular-beam epitaxy growth of strained thin films

1989 ◽  
Vol 7 (2) ◽  
pp. 264 ◽  
Author(s):  
S. V. Ghaisas
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Surface Morphology ◽  
Molecular Beam ◽  
Defect Formation ◽  
Front Surface ◽  
Growth Front ◽  
Molecular Beam Epitaxy Growth

Molecular beam epitaxy growth of InSb1−xBix thin films

2013 ◽  
Vol 378 ◽  
pp. 323-328 ◽  
Author(s):  
Yuxin Song ◽  
Shumin Wang ◽  
Ivy Saha Roy ◽  
Peixiong Shi ◽  
Anders Hallen ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Molecular Beam Epitaxy Growth

scholarly journals Molecular beam epitaxy growth of Mn4−Ni N thin films on MgO(0 0 1) substrates and their magnetic properties

2019 ◽  
Vol 507 ◽  
pp. 163-167 ◽  
Author(s):  
Taro Komori ◽  
Akihito Anzai ◽  
Toshiki Gushi ◽  
Kaoru Toko ◽  
Takashi Suemasu
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Molecular Beam Epitaxy Growth

Structure and surface morphology of highly conductive RuO2 films grown on MgO by oxygen-plasma-assisted molecular beam epitaxy

1997 ◽  
Vol 12 (7) ◽  
pp. 1844-1849 ◽  
Author(s):  
Y. Gao ◽  
G. Bai ◽  
Y. Liang ◽  
G. C. Dunham ◽  
S. A. Chambers
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Surface Morphology ◽  
Oxygen Plasma ◽  
Molecular Beam ◽  
Substrate Surface ◽  
Epitaxial Films ◽  
Low Resistivity ◽  
Small Grains

Metallic RuO2(110) thin films were grown by oxygen-plasma-assisted molecular beam epitaxy (MBE) on MgO(100) and (110) at 425 °C. RuO2 films on MgO(100) are epitaxial with two variants, while RuO2 films on MgO(110) are highly oriented with the (110) face parallel to the substrate surface. The two variants in the RuO2(110) epitaxial films resulted in a twofold mosaic microstructure. The RuO2(110) epitaxial films are very smooth and exhibit a low resistivity of ∼ 36 μΩ-cm. In contrast, the RuO2(110) textured films are very rough, and consist of small grains with a poor in-plane alignment. A slight higher resistivity (49 μΩ-cm) was found for the RuO2 (110) textured films grown on MgO(110).

Dynamics of the Euler Buckling Instability

2001 ◽  
Vol 672 ◽  
Author(s):  
Leonardo Golubovic
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Molecular Beam Epitaxy Growth ◽  
Thin Sheets ◽  
Typical Size ◽  
Buckling Instability ◽  
Euler Buckling ◽  
Slope Selection ◽  
Phase Ordering

ABSTRACTWe review recent systematic investigations of the dynamics of the classical Euler buckling of compressed solid membranes and thin sheets. We relate the membrane buckling dynamics to phase ordering phenomena. Evolving membranes develop wavelike patterns whose wavelength grows, via coarsening, as a power of time. We find that evolving membranes are similar to interfaces of thin films in molecular-beam epitaxy growth with slope selection: They are characterized by the presence of mounds whose typical size grows as a power of time. The morphologies of the evolving membranes are characterized by the presence of a network of growing ridges where the elastic energy is mostly concentrated. We used this fact to develop a scaling theory of the buckling dynamics that gives analytic estimates of the coarsening exponents. Our findings show that the membrane buckling dynamics is characterized by a distinct scaling behavior not found in other coarsening phenomena.

scholarly journals Growth and Characterization of M-Plane GaN Thin Films Grown on γ-LiAlO2 (100) Substrates

Scanning ◽  
2017 ◽  
Vol 2017 ◽  
pp. 1-7
Author(s):  
Yu-Chiao Lin ◽  
Ikai Lo ◽  
Hui-Chun Shih ◽  
Mitch M. C. Chou ◽  
D. M. Schaadt
Keyword(s):  
Thin Films ◽  
High Resolution ◽  
Molecular Beam Epitaxy ◽  
Surface Morphology ◽  
Molecular Beam ◽  
Flux Ratio ◽  
Anisotropic Growth ◽  
X Ray Diffraction ◽  
X Ray

M-plane GaN thin films were grown on LiAlO2 substrates under different N/Ga flux ratios by plasma-assisted molecular beam epitaxy. An anisotropic growth of M-plane GaN was demonstrated against the N/Ga flux ratio. As the N/Ga flux ratio decreased by increasing Ga flux, the GaN surface trended to a flat morphology with stripes along [112-0]. According to high-resolution X-ray diffraction analysis, Li5GaO4 was observed on the interface between GaN and LiAlO2 substrate. The formation of Li5GaO4 would influence the surface morphology and crystal quality.

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