Selective reactive ion etching for short-gate-length GaAs/AlGaAs/InGaAs pseudomorphic modulation-doped field-effect transistors

1989 ◽  
Vol 7 (6) ◽  
pp. 1493 ◽  
Author(s):  
A. A. Ketterson
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Reactive Ion Etching ◽  
Gate Length ◽  
Ion Etching

Cl[sub 2] reactive ion etching for gate recessing of AlGaN/GaN field-effect transistors

1999 ◽  
Vol 17 (6) ◽  
pp. 2755 ◽  
Author(s):  
Ching-Hui Chen ◽  
Stacia Keller ◽  
Elaine D. Haberer ◽  
Lidong Zhang ◽  
Steven P. DenBaars ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Reactive Ion Etching ◽  
Ion Etching

Selective Reactive ION Etching Effects on GaAs/AlGaAs Modfets

1991 ◽  
Vol 240 ◽  
Author(s):  
D. G. Ballegeer ◽  
S. Agarwala ◽  
M. Tong ◽  
A. A. Ketterson ◽  
I. Adesida ◽  
...  
Keyword(s):  
Electron Spectroscopy ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Electron Gas ◽  
Reactive Ion Etching ◽  
Dimensional Electron ◽  
Ion Etching ◽  
Surface Conditions ◽  
Threshold Voltages ◽  
Dimensional Electron Gas

ABSTRACTThe effects of selective reactive ion etching (SRIE) in SiCl4/SiF4 plasmas on GaAs/AlxGai-xAs heterostructures have been studied. Auger electron spectroscopy (AES) and Schottky diode measurements were performed to determine the effects of SRIE and post-SRlE processing on the surface conditions of AlGaAs layers. The degradation of the two-dimensional electron gas (2-DEG) properties of GaAs/Al0.3Ga0.7As heterostructures due to low-energy ion bombardment during SRIE were investigated by conducting Hall measurements at 300 and 77 K. Finally, measurements were performed on dry etched GaAs/Al0.3Ga0.7As modulation-doped field effect transistors (MODFETs) to determine the effects of SRIE on transconductance and threshold voltage. It is shown that extensive overetching during gate recessing results in an increase in device threshold voltages.

Damage Introduced by Chdamage Introduced by CH4/H2 Reactive Ion Etching in Pseudomorphic AlGaAs/InGaAs MODFETs

1991 ◽  
Vol 240 ◽  
Author(s):  
R. Pereira ◽  
M. Van Hove ◽  
W. De Raedt ◽  
C. Van Hoof ◽  
G. Borghs ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Field Effect ◽  
Room Temperature ◽  
Field Effect Transistors ◽  
Reactive Ion Etching ◽  
Electrical Characteristics ◽  
Plasma Exposure ◽  
Ion Etching ◽  
Hall Measurements ◽  
Low Temperature Photoluminescence

ABSTRACTThe damage introduced by CH4/H2 reactive ion etching (RIE) and its recovery after thermal annealing has been investigated by Hall measurements and low temperature photoluminescence (PL) on pseudomorphic AlGaAs/InGaAs modulation doped structures. After plasma exposure, the PL intensity has significantly decreased and shifted in energy. In order to study the recovery of the damage introduced by the plasma, thermal annealing was done at temperatures between 350 and 500°C. We observed that the luminescence emission is totally recovered after annealing at 450°C. Hall measurements at room temperature (RT) and at 77K showed that the electrical characteristics of these structures can be restored only after thermal annealing at 500°C.The optimised etching conditions have been applied in a fabrication process for submicron dry gate recessed pseudomorphic delta-doped AlGaAs/InGaAs modulation doped field effect transistors (MODFETs). For a 0.25 mm gatelength device the maximum DC transconductance value was as high as 680 mS/mm. The same value was extracted from measurements at 15 GHz.

scholarly journals Effects of Doping Concentration on Device Performance of GaN-based Nano-regime MOSFETs

2017 ◽  
Vol 16 (1) ◽  
pp. 69-74
Author(s):  
Md Iktiham Bin Taher ◽  
Md. Tanvir Hasan
Keyword(s):  
Field Effect ◽  
Doping Concentration ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Device Performance ◽  
Gate Length ◽  
Drain Voltage ◽  
Switching Device ◽  
Device Applications

Gallium nitride (GaN) based metal-oxide semiconductor field-effect transistors (MOSFETs) are promising for switching device applications. The doping of n- and p-layers is varied to evaluate the figure of merits of proposed devices with a gate length of 10 nm. Devices are switched from OFF-state (gate voltage, VGS = 0 V) to ON-state (VGS = 1 V) for a fixed drain voltage, VDS = 0.75 V. The device with channel doping of 1×1016 cm-3 and source/drain (S/D) of 1×1020 cm-3 shows good device performance due to better control of gate over channel. The ON-current (ION), OFF-current (IOFF), subthreshold swing (SS), drain induce barrier lowering (DIBL), and delay time are found to be 6.85 mA/μm, 5.15×10-7 A/μm, 87.8 mV/decade, and 100.5 mV/V, 0.035 ps, respectively. These results indicate that GaN-based MOSFETs are very suitable for the logic switching application in nanoscale regime.

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