The advanced unified defect model for Schottky barrier formation

1988 ◽  
Vol 6 (4) ◽  
pp. 1245 ◽  
Author(s):  
W. E. Spicer
Keyword(s):  
Schottky Barrier ◽  
Defect Model ◽  
Barrier Formation

The advanced unified defect model for Schottky barrier formation

1990 ◽  
pp. 260-266
Author(s):  
W. E. Spicer ◽  
Z. Liliental-Weber ◽  
E. Weber ◽  
N. Newman ◽  
T. Kendelewicz ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Defect Model ◽  
Barrier Formation

Unified Inverted Defect Model for GaAs Schottky Barrier Formation

1989 ◽  
Vol 111 (1) ◽  
pp. K43-K48
Author(s):  
A. Sakalas ◽  
S. Zhukauskas
Keyword(s):  
Schottky Barrier ◽  
Defect Model ◽  
Barrier Formation

Transition from Schottky Limit to Bardeen Limit in the Schottky Barrier Formation of al on n- and p-GaAs(110) Interfaces

1986 ◽  
Vol 77 ◽  
Author(s):  
K. K. Chin ◽  
R. Cao ◽  
T. Kendelewicz ◽  
K. Miyano ◽  
M. D. Williams ◽  
...  
Keyword(s):  
Fermi Level ◽  
Schottky Barrier ◽  
Room Temperature ◽  
Defect Model ◽  
Surface Band ◽  
Band Bending ◽  
Pinning Centers ◽  
Free Interface ◽  
Barrier Formation ◽  
Surface Disturbance

ABSTRACTSchottky barrier formation at room temperature (RT) and low temperature (LT) is studied by photoemission. In the low Al coverage regime (from 0.001 to about 1 ML), it is found that, compared to RT pinning behavior, the n-GaAs(110) surface band bending is attenuated, while the p-GaAs(110) surface band bending is enhanced. This striking phenomenon indicates that, by lowering the substrate temperature, one reduces the disturbance of the GaAs(110) surface, and the surface Fermi level of the n- and p-GaAs(110) tends to go to the same position, the so-called Schottky limit that characterizes a perfect defect-free interface. However, as the coverage increases (up to 30 ML), a new mechanism (in the framework of the unified defect model, it is the formation of defect levels due to the energy released as the adsorbed Al atoms start to form clusters and replace Ga) associated with a disturbed surface becomes dominant. Thus, the LT Fermi level positions of n- and p-GaAs move towards the RT positions, the so-called Bardeen limit. This demonstrates that, by controlling the surface disturbance, one can modify the Schottky barrier formation process, going from the Schottky limit which does not have pinning centers to the Bardeen limit which suggests the existence of pinning centers.

An improved defect model for Schottky barrier formation on III-V compounds

1986 ◽  
Vol 3 (1) ◽  
pp. 1-4
Author(s):  
Pan Shihong ◽  
Mo Dang ◽  
W E Spicer
Keyword(s):  
Schottky Barrier ◽  
Defect Model ◽  
Barrier Formation

Effect of annealing Sb/InP(110) interfaces and Schottky barrier formation of Ag on annealed Sb/InP(110) surfaces

1991 ◽  
Vol 58 (20) ◽  
pp. 2243-2245 ◽  
Author(s):  
Masao Yamada ◽  
Anita K. Wahi ◽  
Paul L. Meissner ◽  
Alberto Herrera‐Gomez ◽  
Tom Kendelewicz ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Barrier Formation

Deposition of Ag ions and neutral atoms on ZnSe(100): Influence of interface morphology on Schottky-barrier formation

1990 ◽  
Vol 41 (2) ◽  
pp. 991-994 ◽  
Author(s):  
M. Vos ◽  
C. M. Aldao ◽  
D. J. W. Aastuen ◽  
J. H. Weaver
Keyword(s):  
Schottky Barrier ◽  
Interface Morphology ◽  
Neutral Atoms ◽  
Barrier Formation
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