Si metal–oxide semiconductor field effect transistor with 70-nm slotted gates for study of quasi-one-dimensional quantum transport

J. H. F. Scott-Thomas

doi:10.1116/1.584182

Si metal–oxide semiconductor field effect transistor with 70-nm slotted gates for study of quasi-one-dimensional quantum transport

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.584182 ◽

1988 ◽

Vol 6 (6) ◽

pp. 1841 ◽

Cited By ~ 16

Author(s):

J. H. F. Scott-Thomas

Keyword(s):

Metal Oxide ◽

Quantum Transport ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

One Dimensional ◽

Effect Transistor

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Quantum transport in a nanosize silicon-on-insulator metal-oxide-semiconductor field-effect transistor

Journal of Applied Physics ◽

10.1063/1.1533108 ◽

2003 ◽

Vol 93 (2) ◽

pp. 1230-1240 ◽

Cited By ~ 11

Author(s):

M. D. Croitoru ◽

V. N. Gladilin ◽

V. M. Fomin ◽

J. T. Devreese ◽

W. Magnus ◽

...

Keyword(s):

Metal Oxide ◽

Quantum Transport ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Effect Transistor

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Quantum transport in a nanosize double-gate metal-oxide-semiconductor field-effect transistor

Journal of Applied Physics ◽

10.1063/1.1767619 ◽

2004 ◽

Vol 96 (4) ◽

pp. 2305-2310 ◽

Cited By ~ 12

Author(s):

M. D. Croitoru ◽

V. N. Gladilin ◽

V. M. Fomin ◽

J. T. Devreese ◽

W. Magnus ◽

...

Keyword(s):

Metal Oxide ◽

Quantum Transport ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Gate ◽

Effect Transistor

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Application of one-dimensional metal oxide semiconductor in field effect transistor

Semiconducting Metal Oxide Thin-Film Transistors ◽

10.1088/978-0-7503-2556-1ch6 ◽

2020 ◽

Author(s):

Fengyun Wang ◽

Hongliang Zu

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

One Dimensional ◽

Effect Transistor

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A Si Memory Device Composed of a One-Dimensional Metal-Oxide-Semiconductor Field-Effect-Transistor Switch and a Single-Electron-Transistor Detector

Japanese Journal of Applied Physics ◽

10.1143/jjap.38.2457 ◽

1999 ◽

Vol 38 (Part 1, No. 4B) ◽

pp. 2457-2461 ◽

Cited By ~ 17

Author(s):

Yasuo Takahashi ◽

Akira Fujiwara ◽

Kenji Yamazaki ◽

Hideo Namatsu ◽

Kenji Kurihara ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Memory Device ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Single Electron Transistor ◽

Transistor Switch ◽

One Dimensional ◽

Effect Transistor

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Ballistic quantum transport in a nanoscale metal-oxide-semiconductor field effect transistor

Applied Physics Letters ◽

10.1063/1.2780058 ◽

2007 ◽

Vol 91 (10) ◽

pp. 103510 ◽

Cited By ~ 37

Author(s):

Vijay K. Arora ◽

Michael L. P. Tan ◽

Ismail Saad ◽

Razali Ismail

Keyword(s):

Metal Oxide ◽

Quantum Transport ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Effect Transistor

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High-field quantum transport in the inversion layer of a metal–oxide–semiconductor field effect transistor

Journal of Applied Physics ◽

10.1063/1.1560568 ◽

2003 ◽

Vol 93 (8) ◽

pp. 4616-4621

Author(s):

Husam H. Abu-Safe

Keyword(s):

Metal Oxide ◽

Quantum Transport ◽

Field Effect ◽

High Field ◽

Field Effect Transistor ◽

Inversion Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Effect Transistor

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Ultimate vertical gate-all-around metal–oxide–semiconductor field-effect transistor and its three-dimensional integrated circuits

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2021.106046 ◽

2021 ◽

Vol 134 ◽

pp. 106046

Author(s):

Shujun Ye ◽

Kikuo Yamabe ◽

Tetsuo Endoh

Keyword(s):

Integrated Circuits ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Three Dimensional ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Effect Transistor

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A technique to measure spin-dependent trapping events at the metal–oxide–semiconductor field-effect transistor interface: Near zero field spin-dependent charge pumping

Journal of Applied Physics ◽

10.1063/5.0027214 ◽

2020 ◽

Vol 128 (24) ◽

pp. 244501

Author(s):

M. A. Anders ◽

P. M. Lenahan ◽

N. J. Harmon ◽

M. E. Flatté

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Zero Field ◽

Charge Pumping ◽

Effect Transistor

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Effects of Hafnium Oxide on Surface Potential and Drain Current Models for Subthreshold Short Channel Metal–Oxide–Semiconductor-Field-Effect-Transistor

Transactions on Electrical and Electronic Materials ◽

10.1007/s42341-020-00181-4 ◽

2020 ◽

Vol 21 (3) ◽

pp. 339-347 ◽

Cited By ~ 3

Author(s):

N. P. Maity ◽

Reshmi Maity ◽

Subir Dutta ◽

Subhasish Deb ◽

K. Girija Sravani ◽

...

Keyword(s):

Metal Oxide ◽

Surface Potential ◽

Hafnium Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Drain Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Short Channel ◽

Effect Transistor

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High responsivity in integrated optically controlled metal-oxide semiconductor field-effect transistor using directly bonded SiO2-InP

IEEE Photonics Technology Letters ◽

10.1109/68.605530 ◽

1997 ◽

Vol 9 (8) ◽

pp. 1143-1145 ◽

Cited By ~ 10

Author(s):

T. Yamagata ◽

K. Shimomura

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Responsivity ◽

Effect Transistor

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